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PSMN3R0-60PS,127

P1-P3P4-P6P7-P9P10-P12P13-P15
PSMN3R0-60PS All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 02 — 28 October 2010 3 of 14
NXP Semiconductors
PSMN3R0-60PS
N-channel 60 V 3.0 mΩ standard level MOSFET
Fig 1. Continuous drain current as a function of
mounting base temperature.
Fig 2. Normalized total power dissipation as a
function of mounting base temperature
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
003aad672
0
20
40
60
80
100
120
0 50 100 150 200
T
mb
(°C)
I
D
(A)
(1)
T
mb
(°C)
0 20015050 100
03aa16
40
80
120
P
der
(%)
0
003aad701
10
−1
1
10
10
2
10
3
10
4
10
−1
1 10 10
2
V
DS
(V)
I
D
(A)
DC
100 ms
10 ms
1 ms
Limit R
DSon
= V
DS
/ I
D
10
μ
s
100
μ
s
PSMN3R0-60PS All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 02 — 28 October 2010 4 of 14
NXP Semiconductors
PSMN3R0-60PS
N-channel 60 V 3.0 mΩ standard level MOSFET
5. Thermal characteristics
Table 5. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
R
th(j-mb)
thermal resistance from junction to
mounting base
see Figure 4 - 0.3 0.49 K/W
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration
003aad673
single shot
0.2
0.1
0.05
0.02
10
−1
1
1
t
p
(s)
Z
th
(K/W)
10
−2
10
−3
10
−6
10
−5
10
−4
10
−3
10
−2
10
−1
δ = 0.5
t
p
t
p
T
P
t
T
δ =
PSMN3R0-60PS All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 02 — 28 October 2010 5 of 14
NXP Semiconductors
PSMN3R0-60PS
N-channel 60 V 3.0 mΩ standard level MOSFET
6. Characteristics
Table 6. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
V
(BR)DSS
drain-source breakdown
voltage
I
D
= 250 µA; V
GS
=0V; T
j
=-55°C 54--V
I
D
= 250 µA; V
GS
=0V; T
j
=25°C 60--V
V
GS(th)
gate-source threshold voltage I
D
=1mA; V
DS
=V
GS
; T
j
=25°C;
see Figure 8; see Figure 9
234V
V
GSth
gate-source threshold voltage I
D
=1mA; V
DS
=V
GS
; T
j
=175°C;
see Figure 9
1--V
I
D
=1mA; V
DS
=V
GS
; T
j
=-55°C;
see Figure 9
--4.6V
I
DSS
drain leakage current V
DS
=60V; V
GS
=0V; T
j
= 25 °C - 0.05 10 µA
V
DS
=60V; V
GS
=0V; T
j
= 175 °C - - 500 µA
I
GSS
gate leakage current V
GS
=-20V; V
DS
=0V; T
j
= 25 °C - 2 100 nA
V
GS
=20V; V
DS
=0V; T
j
= 25 °C - 2 100 nA
R
DSon
drain-source on-state
resistance
V
GS
=10V; I
D
=25A; T
j
=175°C;
see Figure 10
--7.2mΩ
V
GS
=10V; I
D
=25A; T
j
=25°C;
see Figure 11
; see Figure 12
-2.43mΩ
R
G
gate resistance f = 1 MHz - 1.1 - Ω
Dynamic characteristics
Q
G(tot)
total gate charge I
D
=80A; V
DS
=12V; V
GS
=10V;
see Figure 13; see Figure 14
- 130 - nC
Q
GS
gate-source charge I
D
=80A; V
DS
=12V; V
GS
=10V;
see Figure 14
; see Figure 13
-43-nC
Q
GD
gate-drain charge I
D
=80A; V
DS
=12V; V
GS
=10V;
see Figure 13
; see Figure 14
-28-nC
C
iss
input capacitance V
DS
=30V; V
GS
= 0 V; f = 1 MHz;
T
j
= 25 °C; see Figure 15;
see Figure 16
- 8079 - pF
C
oss
output capacitance V
DS
=30V; V
GS
= 0 V; f = 1 MHz;
T
j
= 25 °C; see Figure 15
- 971 - pF
C
rss
reverse transfer capacitance V
DS
=30V; V
GS
= 0 V; f = 1 MHz;
T
j
= 25 °C; see Figure 15;
see Figure 16
- 492 - pF
t
d(on)
turn-on delay time V
DS
=30V; R
L
=0.5Ω; V
GS
=10V;
R
G(ext)
=1.5Ω
-31-ns
t
r
rise time - 26 - ns
t
d(off)
turn-off delay time - 77 - ns
t
f
fall time - 22 - ns
Source-drain diode
V
SD
source-drain voltage I
S
=25A; V
GS
=0V; T
j
=25°C;
see Figure 17
- 0.88 1.2 V
t
rr
reverse recovery time I
S
=25A; dI
S
/dt = -100 A/µs;
V
GS
=0V; V
DS
=30V
-54-ns
Q
r
recovered charge - 97 - nC
P1-P3P4-P6P7-P9P10-P12P13-P15

PSMN3R0-60PS,127

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Manufacturer:
Nexperia
Description:
MOSFET N-ch 60V 3.0 mOhm MOSFET
Lifecycle:
New from this manufacturer.
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