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PSMN3R0-60PS,127

P1-P3P4-P6P7-P9P10-P12P13-P15
PSMN3R0-60PS All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 02 — 28 October 2010 6 of 14
NXP Semiconductors
PSMN3R0-60PS
N-channel 60 V 3.0 mΩ standard level MOSFET
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values
Fig 6. Forward transconductance as a function of
drain current; typical values
Fig 7. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
Fig 8. Sub-threshold drain current as a function of
gate-source voltage
003aad674
0
50
100
150
200
0 0.5 1 1.5 2
V
DS
(V)
I
D
(A)
4.5
V
GS
(V) = 4
8
5
10
6
003aad680
0
50
100
150
200
250
300
0 20406080100
(S)
g
fs
I
D
(A)
003aad676
0
50
100
150
200
0246
V
GS
(V)
I
D
(A)
T
j
= 175
°
C
T
j
= 25
°
C
03aa35
V
GS
(V)
0642
10
−4
10
−5
10
−2
10
−3
10
−1
I
D
(A)
10
−6
min typ max
PSMN3R0-60PS All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 02 — 28 October 2010 7 of 14
NXP Semiconductors
PSMN3R0-60PS
N-channel 60 V 3.0 mΩ standard level MOSFET
Fig 9. Gate-source threshold voltage as a function of
junction temperature
Fig 10. Normalized drain-source on-state resistance
factor as a function of junction temperature
Fig 11. Drain-source on-state resistance as a function
of drain current; typical values
Fig 12. Drain-source on-state resistance as a function
of gate-source voltage; typical values
T
j
(°C)
−60 180120060
003aad280
2
3
1
4
5
V
GS(th)
(V)
0
max
typ
min
003aad773
0
1
2
3
−60 0 60 120 180
T
j
(°C)
a
003aad678
0
2
4
6
0 50 100 150 200
I
D
(A)
R
DSon
(mΩ)
V
GS
(V) = 10
5.5
4.5
8
5
6
003aad677
0
2
4
6
8
10
0481216
V
GS
(V)
R
DSon
(mΩ)
PSMN3R0-60PS All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 02 — 28 October 2010 8 of 14
NXP Semiconductors
PSMN3R0-60PS
N-channel 60 V 3.0 mΩ standard level MOSFET
Fig 13. Gate-source voltage as a function of gate
charge; typical values
Fig 14. Gate charge waveform definitions
Fig 15. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
Fig 16. Input and reverse transfer capacitances as a
function of gate-source voltage, typical values
003aad682
0
2
4
6
8
10
0 40 80 120 160
Q
G
(nC)
V
GS
(V)
V
DS
= 30 V
V
DS
= 12 V
003aaa508
V
GS
V
GS(th)
Q
GS1
Q
GS2
Q
GD
V
DS
Q
G(tot)
I
D
Q
GS
V
GS(pl)
003aad679
10
2
10
3
10
4
10
−1
1 10 10
2
V
DS
(V)
C
(pF)
C
iss
C
oss
C
rss
003aad675
0
2000
4000
6000
8000
10000
12000
036912
V
GS
(V)
C
(pF)
C
iss
C
rss
P1-P3P4-P6P7-P9P10-P12P13-P15

PSMN3R0-60PS,127

Mfr. #:
Buy PSMN3R0-60PS,127
Manufacturer:
Nexperia
Description:
MOSFET N-ch 60V 3.0 mOhm MOSFET
Lifecycle:
New from this manufacturer.
Delivery:
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