IXTV30N50P Datasheet IXTH30N50P, IXTT30N50P, IXTQ30N50P | P1-P3

Symbol Test Conditions Maximum Ratings

V

DSS

T

J

= 25° C to 150° C 500 V

V

DGR

T

J

= 25° C to 150° C; R

GS

= 1 MΩ 500 V

V

GSS

Continuous ±30 V

V

GSM

Transient ±40 V

I

D25

T

C

= 25° C30A

I

DM

T

C

= 25° C, pulse width limited by T

JM

75 A

I

AR

T

C

= 25° C30A

E

AR

T

C

= 25° C40mJ

E

AS

T

C

= 25° C 1.2 J

dv/dt I

S

≤ I

DM

, di/dt ≤ 100 A/µs, V

DD

≤ V

DSS

, 10 V/ns

T

J

≤ 150° C, R

G

= 5 Ω

P

D

T

C

= 25° C 460 W

T

J

-55 ... +150 °C

T

JM

150 °C

T

stg

-55 ... +150 °C

T

L

1.6 mm (0.062 in.) from case for 10 s 300 °C

T

SOLD

Plastic body for 10 s 260 °C

M

d

Mounting torque (TO-247, TO-3P) 1.13/10 Nm/lb.in.

F

C

Mounting force (PLUS220, PLUS220SMD) 11 65/2.5 15 N/lb.

Weight PLUS220, PLUS220SMD 4 g

TO-268 5 g

TO-3P 5.5 g

TO-247 6 g

G = Gate D = Drain

S = Source TAB = Drain

DS99415E(04/06)

PolarHV

TM

Power MOSFET

N-Channel Enhancement Mode

Avalanche Rated

Features

l

International standard packages

l

Unclamped Inductive Switching (UIS)

rated

l

Low package inductance

- easy to drive and to protect

IXTH 30N50P

IXTQ 30N50P

IXTT 30N50P

IXTV 30N50P

IXTV 30N50PS

V

DSS

= 500 V

I

D25

= 30 A

R

DS(on)

≤≤

≤ 200 m

ΩΩ

Ω

TO-247 AD (IXTH)

TO-268 (IXTT)

G

S

G

S

D

PLUS220 (IXTV)

TO-3P (IXTQ)

G

D

S

(TAB)

Symbol Test Conditions Characteristic Values

(T

J

= 25° C, unless otherwise specified) Min. Typ. Max.

BV

DSS

V

GS

= 0 V, I

D

= 250 µA 500 V

V

GS(th)

V

DS

= V

GS

, I

D

= 250 µA 3.0 5.0 V

I

GSS

V

GS

= ±30 V, V

DS

= 0 V ±100 nA

I

DSS

V

DS

= V

DSS

25 µA

V

GS

= 0 V T

J

= 125° C 250 µA

R

DS(on)

V

GS

= 10 V, I

D

= 0.5 I

D25

165 200 m Ω

Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %

PLUS220 SMD(IXTV..S)

G

S

(TAB)

Advantages

l

Easy to mount

l

Space savings

l

High power density

IXYS reserves the right to change limits, test conditions, and dimensions.

IXTH 30N50P IXTQ 30N50P IXTT 30N50P

IXTV 30N50P IXTV 30N50PS

Symbol Test Conditions Characteristic Values

(T

J

= 25° C, unless otherwise specified)

Min. Typ. Max.

g

fs

V

DS

= 20 V; I

D

= 0.5 I

D25

, pulse test 17 27 S

C

iss

4150 pF

C

oss

V

GS

= 0 V, V

DS

= 25 V, f = 1 MHz 445 pF

C

rss

28 pF

t

d(on)

25 ns

t

r

V

GS

= 10 V, V

DS

= 0.5 V

DSS

, I

D

= 0.5 I

D25

27 ns

t

d(off)

R

G

= 5 Ω (External) 75 ns

t

f

21 ns

Q

g(on)

70 nC

Q

gs

V

GS

= 10 V, V

DS

= 0.5 V

DSS

, I

D

= 0.5 I

D25

27 nC

Q

gd

22 nC

R

thJC

0.27° C/W

R

thCS

(TO-247, TO-3P and PLUS220) 0.21 ° C/W

Source-Drain Diode Characteristic Values

(T

J

= 25° C, unless otherwise specified)

Symbol Test Conditions Min. Typ. Max.

I

S

V

GS

= 0 V 30 A

I

SM

Repetitive 90 A

V

SD

I

F

= I

S

, V

GS

= 0 V, 1.5 V

Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %

t

rr

I

F

= 18 A, -di/dt = 100 A/µs 400 ns

Fig. 2. Extended Output Characteristics

@ 25

º

C

0

10

20

30

40

50

60

70

0 3 6 9 12 15 18 21 24 27 30

V

D S

- Volts

I

D

- Amperes

V

GS

= 10V

8V

7V

6V

Fig. 1. Output Characteristics

@ 25

º

C

0

3

6

9

12

15

18

21

24

27

30

01234567

V

D S

- Volts

I

D

- Amperes

V

GS

= 10V

8V

7V

6V

IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585

one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2

Fig. 3. Output Characteristics

@ 125

º

C

0

3

6

9

12

15

18

21

24

27

30

0 2 4 6 8 101214

V

D S

- Volts

I

D

- Amperes

V

GS

= 10V

8V

7V

5V

6V

Fig. 4. R

DS(on

)

Norm alized to 0.5 I

D25

Value vs. Junction Temperature

0.4

0.7

1

1.3

1.6

1.9

2.2

2.5

2.8

3.1

3.4

-50 -25 0 25 50 75 100 125 150

T

J

- Degrees Centigrade

R

D S ( o n )

- Normalized

I

D

= 30A

I

D

= 15A

V

GS

= 10V

Fig. 6. Drain Current vs. Case

Temperature

0

5

10

15

20

25

30

35

-50 -25 0 25 50 75 100 125 150

T

C

- Degrees Centigrade

I

D

- Amperes

Fig. 5. R

DS(on)

Nor m aliz e d t o

0.5 I

D25

Value vs. I

D

0.7

1

1.3

1.6

1.9

2.2

2.5

2.8

3.1

3.4

0 1020304050607080

I

D

- Amperes

R

D S ( o n )

- Normalized

T

J

= 125

º

C

T

J

= 25

º

C

V

GS

= 10V

Fig. 7. Input Admittance

0

5

10

15

20

25

30

35

40

45

50

55

3.5 4 4.5 5 5.5 6 6.5 7 7.5

V

G S

- Volts

I

D

- Amperes

T

J

= 125

º

C

25

º

C

-40

º

C

Fig. 8. Transconductance

0

5

10

15

20

25

30

35

40

45

50

55

60

0 5 10 15 20 25 30 35 40 45 50 55

I

D

- Amperes

g

f s

- Siemens

T

J

= -40

º

C

25

º

C

125

º

C

IXTH 30N50P IXTQ 30N50P IXTT 30N50P

IXTV 30N50P IXTV 30N50PS

IXTV30N50P

IXTV30N50P

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