IXTV30N50P

IXYS reserves the right to change limits, test conditions, and dimensions.

IXTH 30N50P IXTQ 30N50P IXTT 30N50P

IXTV 30N50P IXTV 30N50PS

Fig. 11. Capacitance

10

100

1000

10000

0 5 10 15 20 25 30 35 40

V

D S

- Volts

Capacitance - picoFarads

C

iss

C

oss

C

rs

f = 1MHz

Fig. 10. Gate Charge

0

1

2

3

4

5

6

7

8

9

10

0 10203040506070

Q

G

- nanoCoulombs

V

G S

- Volts

V

DS

= 250V

I

D

= 15A

I

G

= 10mA

Fig. 9. Source Current vs.

Source -To-Drain Voltage

0

10

20

30

40

50

60

70

80

90

0.4 0.5 0.6 0.7 0.8 0.9 1 1.1

V

S D

- Volts

I

S

- Amperes

T

J

= 125

º

C

T

J

= 25

º

C

Fig. 12. Forw ard-Bias

Safe Ope r ating Are a

1

10

100

10 100 1000

V

D S

- Volts

I

D

- Amperes

100µs

1ms

DC

T

J

= 150ºC

T

C

= 25ºC

R

DS(on)

Limit

10ms

25

µ

s

Fig. 13. Maximum Transient Thermal Resistance

0.01

0.10

1.00

0.1 1 10 100 1000

Puls e Width - millis ec onds

R

( t h ) J C

-

º

C / W

© 2006 IXYS All rights reserved

Package Outline Drawings

IXTH 30N50P IXTQ 30N50P IXTT 30N50P

IXTV 30N50P IXTV 30N50PS

TO-3P (IXTQ) Outline

PLUS220 (IXTV) Outline

TO-268 (IXTT) Outline

PLUS220SMD (IXTV_S) Outline

TO-247 (IXTH) Outline

Terminals: 1 - Gate 2 - Drain

3 - Source Tab - Drain

Dim. Millimeter Inches

Min. Max. Min. Max.

A 4.7 5.3 .185 .209

A

1

2.2 2.54 .087 .102

A

2

2.2 2.6 .059 .098

b 1.0 1.4 .040 .055

b

1

1.65 2.13 .065 .084

b

2

2.87 3.12 .113 .123

C .4 .8 .016 .031

D 20.80 21.46 .819 .845

E 15.75 16.26 .610 .640

e 5.20 5.72 0.205 0.225

L 19.81 20.32 .780 .800

L1 4.50 .177

∅P 3.55 3.65 .140 .144

Q 5.89 6.40 0.232 0.252

R 4.32 5.49 .170 .216

S 6.15 BSC 242 BSC

1 2 3

IXTV30N50P

Mfr. #:

Manufacturer:

Description:

MOSFET N-CH 500V 30A PLUS220

Lifecycle:

New from this manufacturer.

Delivery:

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