Si5350A
4 Rev. 0.9
1. Electrical Specifications
Table 1. Recommended Operating Conditions
(V
DD
= 2.5 V ±10%, or 3.3 V ±10%, T
A
= –40 to 85 °C)
Parameter Symbol Test Condition Min Typ Max Unit
Ambient Temperature T
A
40258C
Core Supply Voltage V
DD
3.0 3.3 3.60 V
2.25 2.5 2.75 V
Output Buffer Voltage V
DDOx
2.25 2.5 2.75 V
3.0 3.3 3.60 V
Note: All minimum and maximum specifications are guaranteed and apply across the recommended operating conditions.
Typical values apply at nominal supply voltages and an operating temperature of 25 °C unless otherwise noted.
Table 2. DC Characteristics
(V
DD
= 2.5 V ±10%, or 3.3 V ±10%, T
A
= –40 to 85 °C)
Parameter Symbol Test Condition Min Typ Max Unit
Core Supply Current* I
DD
Enabled 3 outputs 20 30 mA
Enabled 8 outputs 25 40 mA
Power Down (PDN = V
DD
)—50µA
Output Buffer Supply
Current (Per Output)*
I
DDOx
C
L
=5pF 2.0 4.5 mA
Input Current
I
P1-P4
Pins P1, P2, P3, P4
Vin < 3.6V
——10 µA
I
P0
Pin P0 30 µA
Output Impedance Z
OI
8 mA output drive current, see
Design Considerations section
—85
*Note: Output clocks less than or equal to 133 MHz.
Table 3. AC Characteristics
((V
DD
= 2.5 V ±10%, or 3.3 V ±10%, T
A
= –40 to 85 °C)
Parameter Symbol Test Condition Min Typ Max Unit
Power-Up Time T
RDY
From V
DD
=V
DDmin
to valid output
clock, C
L
=5pF, f
CLKn
>1MHz
—210ms
Power-Down Time T
PD
From V
DD
=V
DDmin
, C
L
=5pF,
f
CLKn
>1MHz
—5100ms
Output Enable Time T
OE
From OEB assertion to valid clock
output, C
L
=5pF, f
CLKn
>1MHz
——10µs
Output Frequency Transition Time T
FREQ
f
CLKn
>1MHz 10 µs
Spread Spectrum Frequency
Deviation
SS
DEV
Down spread –0.5 –2.5 %
Spread Spectrum Modulation Rate SS
MOD
30 31.5 33 kHz
Si5350A
Rev. 0.9 5
Table 4. Input Characteristics
(V
DD
= 2.5 V ±10%, or 3.3 V ±10%, T
A
= –40 to 85 °C)
Parameter Symbol Test Condition Min Typ Max Units
Crystal Frequency f
XTAL
25 27 MHz
P0-P4 Input Low Voltage V
IL-P0-4
–0.1 0.3 x V
DD
V
P0-P4 Input High Voltage V
IH_P0-4
0.7 x V
DD
—3.60 V
Table 5. Output Characteristics
(V
DD
= 2.5 V ±10%, or 3.3 V ±10%, T
A
= –40 to 85 °C)
Parameter Symbol Test Condition Min Typ Max Units
Frequency Range F
CLK
0.008 160 MHz
Load Capacitance C
L
F
CLK
< 100 MHz 5 15 pF
Duty Cycle DC Measured at V
DD
/2 45 50 55 %
Rise/Fall Time t
r
/t
f
20%–80%, C
L
= 5 pF 0.5 1 1.5 ns
Output High Voltage V
OH
V
DD
– 0.6 V
Output Low Voltage V
OL
——0.6V
Period Jitter J
PER
Measured over 10k cycles 60 100 ps pk-pk
Cycle-to-Cycle Jitter J
CC
Measured over 10k cycles 50 90 ps pk
RMS Phase Jitter J
RMS
12 kHz–20 MHz 5.0 10 ps rms
Table 6. 25 MHz Crystal Requirements
1,2
Parameter Symbol Min Typ Max Unit
Crystal Frequency f
XTAL
—25—MHz
Load Capacitance C
L
6—12pF
Equivalent Series Resistance r
ESR
——150
Crystal Max Drive Level d
L
——150µW
Notes:
1. Crystals which require load capacitances of 6, 8, or 10 pF should use the device’s internal load capacitance for
optimum performance. See register 183 bits 7:6. A crystal with a 12 pF load capacitance requirement should use a
combination of the internal 10 pF load capacitors in addition to external 2 pF load capacitors. Adding external 2 pF load
capacitors can minimize jitter by 20%.
2. Refer to “AN551: Crystal Selection Guide” for more details.
Si5350A
6 Rev. 0.9
Table 7. 27 MHz Crystal Requirements
1,2
Parameter Symbol Min Typ Max Unit
Crystal Frequency f
XTAL
—27—MHz
Load Capacitance C
L
6—12pF
Equivalent Series Resistance r
ESR
——150
Crystal Max Drive Level Spec d
L
——150µW
Notes:
1. Crystals which require load capacitances of 6, 8, or 10 pF should use the device’s internal load capacitance for
optimum performance. See register 183 bits 7:6. A crystal with a 12 pF load capacitance requirement should use a
combination of the internal 10 pF load capacitors in addition to external 2 pF load capacitors. Adding external 2 pF load
capacitors can minimize jitter by 20%.
2. Refer to “AN551: Crystal Selection Guide” for more details.
Table 8. Thermal Characteristics
Parameter Symbol Test Condition Package Value Unit
Thermal Resistance
Junction to Ambient
JA
Still Air
10-MSOP 131 °C/W
24-QSOP 80 °C/W
20-QFN 51 °C/W
Thermal Resistance
Junction to Case
JC
Still Air
10-MSOP 43 °C/W
24-QSOP 31 °C/W
20-QFN 16 °C/W
Table 9. Absolute Maximum Ratings
Parameter Symbol Test Condition Value Unit
DC Supply Voltage V
DD_max
–0.5 to 3.8 V
Input Voltage
V
IN_P1-4
Pins P1, P2, P3, P4 –0.5 to 3.8 V
V
IN_P0
P0 –0.5 to (V
DD
+0.3) V
V
IN_XA/B
Pins XA, XB –0.5 to 1.3 V V
Junction Temperature T
J
–55 to 150 °C
Note: Permanent device damage may occur if the absolute maximum ratings are exceeded. Functional operation should be
restricted to the conditions as specified in the operational sections of this data sheet. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.

SI5350A-A-GTR

Mfr. #:
Manufacturer:
Silicon Labs
Description:
IC CLK GEN PLL BLANK CUST 10MSOP
Lifecycle:
New from this manufacturer.
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