MUN5311DW1T1G

© Semiconductor Components Industries, LLC, 2014
July, 2018 − Rev. 4
1 Publication Order Number:
DTC114EP/D
MUN5311DW1,
NSBC114EPDXV6,
NSBC114EPDP6
Complementary Bias
Resistor Transistors
R1 = 10 kW, R2 = 10 kW
NPN and PNP Transistors with Monolithic
Bias Resistor Network
This series of digital transistors is designed to replace a single
device and its external resistor bias network. The Bias Resistor
Transistor (BRT) contains a single transistor with a monolithic bias
network consisting of two resistors; a series base resistor and a
base-emitter resistor. The BRT eliminates these individual
components by integrating them into a single device. The use of a BRT
can reduce both system cost and board space.
Features
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
S and NSV Prefix for Automotive and Other Applications
Requiring Unique Site and Control Change Requirements;
AEC-Q101 Qualified and PPAP Capable*
These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
(T
A
= 25°C both polarities Q
1
(PNP) & Q
2
(NPN), unless otherwise noted)
Rating
Symbol Max Unit
Collector-Base Voltage V
CBO
50 Vdc
Collector-Emitter Voltage V
CEO
50 Vdc
Collector Current − Continuous I
C
100 mAdc
Input Forward Voltage V
IN(fwd)
40 Vdc
Input Reverse Voltage V
IN(rev)
10 Vdc
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
ORDERING INFORMATION
Device Package Shipping
MUN5311DW1T1G,
SMUN5311DW1T1G*
SOT−363 3,000/Tape & Reel
MUN5311DW1T2G,
SMUN5311DW1T2G*
SOT−363 3,000/Tape & Reel
SMUN5311DW1T3G SOT−363 10,000/Tape & Reel
NSBC114EPDXV6T1G,
NSVBC114EPDXV6T1G*
SOT−563 4,000/Tape & Reel
www.onsemi.com
MARKING DIAGRAMS
PIN CONNECTIONS
11 M G
1
11/L = Specific Device Code
M = Date Code*
G = Pb-Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending up-
on manufacturing location.
SOT−363
CASE 419B
SOT−563
CASE 463A
Q
1
Q
2
(1)(2)(3)
(6)(5)(4)
R
1
R
2
R
2
R
1
SOT−963
CASE 527AD
L M
1
11 MG
G
1
6
MUN5311DW1, NSBC114EPDXV6, NSBC114EPDP6
www.onsemi.com
2
ORDERING INFORMATION
Device Shipping
Package
NSBC114EPDXV6T5G SOT−563 8,000/Tape & Reel
NSBC114EPDP6T5G SOT−963 8,000/Tape & Reel
For information on tape and reel specifications, including part orientation and
tape sizes, please refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
MUN5311DW1 (SOT−363) ONE JUNCTION HEATED
Total Device Dissipation
T
A
= 25°C (Note 1)
(Note 2)
Derate above 25°C (Note 1)
(Note 2)
P
D
187
256
1.5
2.0
mW
mW/°C
Thermal Resistance, (Note 1)
Junction to Ambient (Note 2)
R
q
JA
670
490
°C/W
MUN5311DW1 (SOT−363) BOTH JUNCTION HEATED (Note 3)
Total Device Dissipation
T
A
= 25°C (Note 1)
(Note 2)
Derate above 25°C (Note 1)
(Note 2)
P
D
250
385
2.0
3.0
mW
mW/°C
Thermal Resistance,
Junction to Ambient (Note 1)
(Note 2)
R
q
JA
493
325
°C/W
Thermal Resistance,
Junction to Lead (Note 1)
(Note 2)
R
q
JL
188
208
°C/W
Junction and Storage Temperature Range T
J
, T
stg
−55 to +150 °C
NSBC114EPDXV6 (SOT−563) ONE JUNCTION HEATED
Total Device Dissipation
T
A
= 25°C (Note 1)
Derate above 25°C (Note 1)
P
D
357
2.9
mW
mW/°C
Thermal Resistance,
Junction to Ambient (Note 1)
R
q
JA
350
°C/W
NSBC114EPDXV6 (SOT−563) BOTH JUNCTION HEATED (Note 3)
Total Device Dissipation
T
A
= 25°C (Note 1)
Derate above 25°C (Note 1)
P
D
500
4.0
mW
mW/°C
Thermal Resistance,
Junction to Ambient (Note 1)
R
q
JA
250
°C/W
Junction and Storage Temperature Range T
J
, T
stg
−55 to +150 °C
NSBC114EPDP6 (SOT−963) ONE JUNCTION HEATED
Total Device Dissipation
T
A
= 25°C (Note 4)
(Note 5)
Derate above 25°C (Note 4)
(Note 5)
P
D
231
269
1.9
2.2
MW
mW/°C
Thermal Resistance,
Junction to Ambient (Note 4)
(Note 5)
R
q
JA
540
464
°C/W
NSBC114EPDP6 (SOT−963) BOTH JUNCTION HEATED (Note 3)
Total Device Dissipation
T
A
= 25°C (Note 4)
(Note 5)
Derate above 25°C (Note 4)
(Note 5)
P
D
339
408
2.7
3.3
MW
mW/°C
MUN5311DW1, NSBC114EPDXV6, NSBC114EPDP6
www.onsemi.com
3
THERMAL CHARACTERISTICS
Characteristic UnitMaxSymbol
NSBC114EPDP6 (SOT−963) BOTH JUNCTION HEATED (Note 3)
Thermal Resistance,
Junction to Ambient (Note 4)
(Note 5)
R
q
JA
369
306
°C/W
Junction and Storage Temperature Range T
J
, T
stg
−55 to +150 °C
1. FR−4 @ Minimum Pad.
2. FR−4 @ 1.0 × 1.0 Inch Pad.
3. Both junction heated values assume total power is sum of two equally powered channels.
4. FR−4 @ 100 mm
2
, 1 oz. copper traces, still air.
5. FR−4 @ 500 mm
2
, 1 oz. copper traces, still air.

MUN5311DW1T1G

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - Pre-Biased 100mA Complementary 50V NPN & PNP
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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