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MUN5311DW1T1G

P1-P3P4-P6P7-P9P10-P11
MUN5311DW1, NSBC114EPDXV6, NSBC114EPDP6
www.onsemi.com
4
ELECTRICAL CHARACTERISTICS (T
A
=25°C both polarities Q
1
(PNP) & Q
2
(NPN), unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector-Base Cutoff Current
(V
CB
=50V, I
E
=0)
I
CBO
− − 100
nAdc
Collector-Emitter Cutoff Current
(V
CE
=50V, I
B
=0)
I
CEO
− − 500
nAdc
Emitter-Base Cutoff Current
(V
EB
= 6.0 V, I
C
=0)
I
EBO
− − 0.5
mAdc
Collector-Base Breakdown Voltage
(I
C
=10mA, I
E
=0)
V
(BR)CBO
50 − −
Vdc
Collector-Emitter Breakdown Voltage (Note 6)
(I
C
= 2.0 mA, I
B
=0)
V
(BR)CEO
50 − −
Vdc
ON CHARACTERISTICS
DC Current Gain (Note 6)
(I
C
= 5.0 mA, V
CE
=10V)
h
FE
35 60 −
Collector-Emitter Saturation Voltage (Note 6)
(I
C
= 10 mA, I
B
= 0.3 mA)
V
CE(sat)
− − 0.25
V
Input Voltage (Off)
(V
CE
= 5.0 V, I
C
= 100 mA) (NPN)
(V
CE
= 5.0 V, I
C
= 100 mA) (PNP)
V
i(off)
−
−
1.2
1.2
−
−
Vdc
Input Voltage (On)
(V
CE
= 0.2 V, I
C
= 10 mA) (NPN)
(V
CE
= 0.2 V, I
C
= 10 mA) (PNP)
V
i(on)
−
−
2.0
2.2
−
−
Vdc
Output Voltage (On)
(V
CC
= 5.0 V, V
B
= 2.5 V, R
L
= 1.0 kW)
V
OL
− − 0.2
Vdc
Output Voltage (Off)
(V
CC
= 5.0 V, V
B
= 0.5 V, R
L
= 1.0 kW)
V
OH
4.9 − −
Vdc
Input Resistor R1 7.0 10 13
kW
Resistor Ratio R
1
/R
2
0.8 1.0 1.2
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
6. Pulsed Condition: Pulse Width = 300 ms, Duty Cycle ≤ 2%.
Figure 1. Derating Curve
AMBIENT TEMPERATURE (°C)
1251007550250−25−50
0
50
100
150
200
250
300
P
D
, POWER DISSIPATION (mW)
150
(1) (2)
(1) SOT−363; 1.0 × 1.0 Inch Pad
(2) SOT−563; Minimum Pad
(3) SOT−963; 100 mm
2
, 1 oz. Copper Trace
350
400
(3)
MUN5311DW1, NSBC114EPDXV6, NSBC114EPDP6
www.onsemi.com
5
TYPICAL CHARACTERISTICS − NPN TRANSISTOR
MUN5311DW1, NSBC114EPDXV6
Figure 2. V
CE(sat)
vs. I
C
1002030
I
C
, COLLECTOR CURRENT (mA)
10
1
0.1
40
50
Figure 3. DC Current Gain
Figure 4. Output Capacitance
1
0.1
0.01
0.001
020 60
80
I
C
, COLLECTOR CURRENT (mA)
1000
100
10
11010
0
I
C
, COLLECTOR CURRENT (mA)
Figure 5. Output Current vs. Input Voltage
100
10
1
0.1
0.01
0.001
01234
V
in
, INPUT VOLTAGE (V)
5678910
Figure 6. Input Voltage vs. Output Current
50
010 203040
3.6
2.8
0.4
1.2
0
V
R
, REVERSE VOLTAGE (V)
V
CE(sat)
, COLLECTOR−EMITTER VOLTAGE (V)
I
C
/I
B
= 10
T
A
= −25°C
75°C
25°C
V
CE
= 10 V
T
A
= 75°C
−25°C
25°C
h
FE
, DC CURRENT GAIN
f = 10 kHz
I
E
= 0 A
T
A
= 25°C
0.8
1.6
2.0
2.4
3.2
C
ob
, OUTPUT CAPACITANCE (pF)
V
O
= 5 V
T
A
= 75°C
−25°C
25°C
I
C
, COLLECTOR CURRENT (mA)
V
O
= 0.2 V
V
in
, INPUT VOLTAGE (V)
T
A
= 75°C
−25°C
25°C
40
MUN5311DW1, NSBC114EPDXV6, NSBC114EPDP6
www.onsemi.com
6
TYPICAL CHARACTERISTICS − PNP TRANSISTOR
MUN5311DW1, NSBC114EPDXV6
100
10
1
0.1
0.01
0.001
0
V
in
, INPUT VOLTAGE (V)
T
A
= −25°C
25°C
123456789
0.01
20
I
C
, COLLECTOR CURRENT (mA)
0.1
1
0406080
1000
11010
0
I
C
, COLLECTOR CURRENT (mA)
T
A
=75°C
−25°C
100
10
75°C
50
010203040
10
3
1
2
V
R
, REVERSE VOLTAGE (V)
0
T
A
= −25°C
25°C
75°C
f = 10 kHz
l
E
= 0 A
T
A
= 25°C
V
O
= 5 V
I
C
/I
B
=10
V
CE
= 10 V
0
I
C
, COLLECTOR CURRENT (mA)
0.1
1
10
100
10 20 30 40 50
T
A
= −25°C
25°C
75°C
Figure 7. V
CE(sat)
vs. I
C
Figure 8. DC Current Gain
Figure 9. Output Capacitance
Figure 10. Output Current vs. Input Voltage
Figure 11. Input Voltage vs. Output Current
25°C
V
CE(sat)
, COLLECTOR−EMITTER VOLTAGE (V)
h
FE
, DC CURRENT GAIN
10
C
ob
, OUTPUT CAPACITANCE (pF)
4
7
5
6
8
9
I
C
, COLLECTOR CURRENT (mA)
V
O
= 0.2 V
V
in
, INPUT VOLTAGE (V)
P1-P3P4-P6P7-P9P10-P11

MUN5311DW1T1G

Mfr. #:
Buy MUN5311DW1T1G
Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - Pre-Biased 100mA Complementary 50V NPN & PNP
Lifecycle:
New from this manufacturer.
Delivery:
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