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MUN5311DW1T1G

P1-P3P4-P6P7-P9P10-P11
MUN5311DW1, NSBC114EPDXV6, NSBC114EPDP6
www.onsemi.com
7
TYPICAL CHARACTERISTICS − NPN TRANSISTOR
NSBC114EPDP6
Figure 12. V
CE(sat)
vs. I
C
Figure 13. DC Current Gain
I
C
, COLLECTOR CURRENT (mA) I
C
, COLLECTOR CURRENT (mA)
403020 50100
0.01
0.1
1
1001010.1
1
10
100
1000
Figure 14. Output Capacitance Figure 15. Output Current vs. Input Voltage
V
R
, REVERSE VOLTAGE (V) V
in
, INPUT VOLTAGE (V)
50403020100
0
0.4
0.8
1.2
1.6
2.0
2.4
65743210
0.01
0.1
1
10
100
Figure 16. Input Voltage vs. Output Current
I
C
, COLLECTOR CURRENT (mA)
4030 5020100
0.1
1
10
100
V
CE(sat)
, COLLECTOR−EMITTER VOLTAGE (V)
h
FE
, DC CURRENT GAIN
C
ob
, OUTPUT CAPACITANCE (pF)
I
C
, COLLECTOR CURRENT (mA)
V
in
, INPUT VOLTAGE (V)
I
C
/I
B
= 10
150°C
−55°C
25°C
V
CE
= 10 V
150°C
−55°C
25°C
f = 10 kHz
I
E
= 0 A
T
A
= 25°C
V
O
= 5 V
150°C
−55°C
25°C
V
O
= 0.2 V
150°C
−55°C
25°C
MUN5311DW1, NSBC114EPDXV6, NSBC114EPDP6
www.onsemi.com
8
TYPICAL CHARACTERISTICS − PNP TRANSISTOR
NSBC114EPDP6
Figure 17. V
CE(sat)
vs. I
C
Figure 18. DC Current Gain
I
C
, COLLECTOR CURRENT (mA) I
C
, COLLECTOR CURRENT (mA)
403020 50100
0.01
0.1
1
100100.1
1
10
100
1000
Figure 19. Output Capacitance Figure 20. Output Current vs. Input Voltage
V
R
, REVERSE VOLTAGE (V) V
in
, INPUT VOLTAGE (V)
50403020100
0
1
2
3
4
6
7
65843210
0.1
1
10
100
Figure 21. Input Voltage vs. Output Current
I
C
, COLLECTOR CURRENT (mA)
4030 5020100
0.1
1
10
100
V
CE(sat)
, COLLECTOR−EMITTER VOLTAGE (V)
h
FE
, DC CURRENT GAIN
C
ob
, OUTPUT CAPACITANCE (pF)
I
C
, COLLECTOR CURRENT (mA)
V
in
, INPUT VOLTAGE (V)
I
C
/I
B
= 10
150°C
−55°C
25°C
V
CE
= 10 V
150°C
−55°C
25°C
f = 10 kHz
I
E
= 0 A
T
A
= 25°C
V
O
= 5 V
150°C
−55°C
25°C
V
O
= 0.2 V
150°C
−55°C
25°C
0.01
5
7
1
MUN5311DW1, NSBC114EPDXV6, NSBC114EPDP6
www.onsemi.com
9
PACKAGE DIMENSIONS
SC−88/SC70−6/SOT−363
CASE 419B−02
ISSUE Y
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSIONS D AND E1 DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS. MOLD FLASH, PROTRU-
SIONS, OR GATE BURRS SHALL NOT EXCEED 0.20 PER END.
4. DIMENSIONS D AND E1 AT THE OUTERMOST EXTREMES OF
THE PLASTIC BODY AND DATUM H.
5. DATUMS A AND B ARE DETERMINED AT DATUM H.
6. DIMENSIONS b AND c APPLY TO THE FLAT SECTION OF THE
LEAD BETWEEN 0.08 AND 0.15 FROM THE TIP.
7. DIMENSION b DOES NOT INCLUDE DAMBAR PROTRUSION.
ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 TOTAL IN
EXCESS OF DIMENSION b AT MAXIMUM MATERIAL CONDI-
TION. THE DAMBAR CANNOT BE LOCATED ON THE LOWER
RADIUS OF THE FOOT.
Cddd
M
123
A1
A
c
654
E
b
6X
DIM MIN NOM MAX
MILLIMETERS
A −−− −−− 1.10
A1 0.00 −−− 0.10
ddd
b 0.15 0.20 0.25
C 0.08 0.15 0.22
D 1.80 2.00 2.20
−−− −−− 0.043
0.000 −−− 0.004
0.006 0.008 0.010
0.003 0.006 0.009
0.070 0.078 0.086
MIN NOM MAX
INCHES
0.10 0.004
E1 1.15 1.25 1.35
e 0.65 BSC
L 0.26 0.36 0.46
2.00 2.10 2.20
0.045 0.049 0.053
0.026 BSC
0.010 0.014 0.018
0.078 0.082 0.086
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
0.65
0.66
6X
DIMENSIONS: MILLIMETERS
0.30
PITCH
2.50
6X
RECOMMENDED
TOP VIEW
SIDE VIEW END VIEW
bbb
H
B
SEATING
PLANE
DETAIL A
E
A2 0.70 0.90 1.00 0.027 0.035 0.039
L2 0.15 BSC 0.006 BSC
aaa 0.15 0.006
bbb 0.30 0.012
ccc 0.10 0.004
A-B D
aaa C
2X 3 TIPS
D
E1
D
e
A
2X
aaa H D
2X
D
L
PLANE
DETAIL A
H
GAGE
L2
C
ccc
C
A2
6X
P1-P3P4-P6P7-P9P10-P11

MUN5311DW1T1G

Mfr. #:
Buy MUN5311DW1T1G
Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - Pre-Biased 100mA Complementary 50V NPN & PNP
Lifecycle:
New from this manufacturer.
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