1 Electrical ratings
Table 2: Absolute maximum ratings
Symbol Parameter Value Unit
V
GS
Gate-source voltage ± 25 V
I
D
Drain current (continuous) at T
C
= 25 °C 12 A
I
D
Drain current (continuous) at T
C
= 100 °C 7.6 A
I
DM
Drain current (pulsed) 48 A
P
TOT
Total dissipation at T
C
= 25 °C 110 W
dv/dt
Peak diode recovery voltage slope 15 V/ns
dv/dt
.
MOSFET dv/dt ruggedness 50 V/ns
T
stg
Storage temperature - 55 to 150 °C
T
j
Max. operating junction temperature 150 °C
Notes:
(1)
Pulse width limited by safe operating area.
(2)
I
SD
≤ 12 A, di/dt ≤ 400 A/µs; V
DS peak
< V
(BR)DSS
, V
DD
= 80% V
(BR)DSS
.
(3)
V
DS
≤ 480 V
Table 3: Thermal data
Symbol Parameter
Value
Unit
TO-220 IPAK
R
thj-case
Thermal resistance junction-case max. 1.14 °C/W
R
thj-amb
Thermal resistance junction-ambient max. 62.5 100 °C/W
Table 4: Avalanche characteristics
Symbol Parameter Value Unit
I
AR
Avalanche current, repetetive or not repetetive
(pulse width limited by T
jmax
)
2.9 A
E
AS
Single pulse avalanche energy (starting
T
j
= 25 °C, I
D
= I
AR
, V
DD
= 50 V)
130 mJ
