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STU16N60M2

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16
STP16N60M2, STU16N60M2
Electrical characteristics
DocID027198 Rev 1
7/16
Figure 8: Normalized gate threshold voltage
vs. temperature
Figure 9: Normalized V(BR)DSS vs.
temperature
Figure 10: Static drain-source on-resistance
Figure 11: Normalized on-resistance vs.
temperature
Figure 12: Gate charge vs. gate-source
voltage
Figure 13: Capacitance variations
Electrical characteristics
STP16N60M2, STU16N60M2
8/16
DocID027198 Rev 1
Figure 14: Output capacitance stored
energy
Figure 15: Source- drain diode forward
characteristics
STP16N60M2, STU16N60M2
Test circuits
DocID027198 Rev 1
9/16
3 Test circuits
Figure 16: Switching times test circuit for resistive
load
Figure 17: Gate charge test circuit
Figure 18: Test circuit for inductive load switching
and diode recovery times
Figure 19: Unclamped inductive load test circuit
Figure 20: Unclamped inductive waveform
Figure 21: Switching time waveform
AM01469v1
V
DD
47 k Ω
1 kΩ
47 k Ω
2.7 k Ω
1 kΩ
12 V
V
i
≤ V
GS
2200 μ F
P
W
I
G
= CONST
100 Ω
100 nF
D.U.T.
V
G
AM01470v1
A
D
D.U.T.
S
B
G
25
A
A
B
B
R
G
G
FAST
DIODE
D
S
L=100 µH
µF
3.3
1000
µF
V
DD
Ω
D.U.T.
V
(BR)DS S
V
DD
V
DD
V
D
I
DM
I
D
AM01472v1
AM01473v1
0
V
GS
90%
V
DS
t
on
90%
10%
90%
10%
t
d(on)
t
r
t
t
d(off)
t
f
10%
0
off
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16

STU16N60M2

Mfr. #:
Buy STU16N60M2
Manufacturer:
STMicroelectronics
Description:
MOSFET N-channel 600 V, 0.28 Ohm typ., 12 A MDmesh M2 Power MOSFET in IPAK package
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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