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DMC2020USD-13

P1-P3P4-P6P7-P9P10-P11
DMC2020USD
Document number: DS32121 Rev. 4 - 2
1 of 11
www.diodes.com
February 2011
© Diodes Incorporated
DMC2020USD
A
Product Line o
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Diodes Incorporated
20V COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
Product Summary
Device
V
(BR)DSS
R
DS(on)
max
I
D
Max
T
A
= 25°C
(Notes 3 & 5)
Q1 20V
20mΩ @ V
GS
= 4.5V
8.5A
28mΩ @ V
GS
= 2.5V
7.2A
Q2 -20V
33mΩ @ V
GS
= -4.5V
-6.8A
45mΩ @ V
GS
= -2.5V
-5.8A
Description and Applications
This MOSFET has been designed to minimize the on-state resistance
(R
DS(on)
) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
• Motor control
• DC-DC Converters
• Power management functions
• Notebook Computers and Printers
Features and Benefits
• Reduced footprint with two discretes in a single SO8
• Low gate drive
• Low input capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• ESD Protected up to 2kV
• “Lead Free”, RoHS Compliant (Note 1)
• Halogen and Antimony Free. "Green" Device (Note 1)
Mechanical Data
• Case: SO-8
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals Connections: See Diagram
• Terminals: Finish - Matte Tin annealed over Copper lead frame.
Solderable per MIL-STD-202, Method 208
• Weight: 0.074 grams (approximate)
Ordering Information (Note 1)
Product Marking Reel size (inches) Tape width (mm) Quantity per reel
DMC2020USD-13 C2020UD 13 12 2,500
Notes: 1. No purposefully added lead. Diodes Inc.'s "Green" policy and packaging details can be found on our website at http://www.diodes.com.
Marking Information
SO-8
Top View
Top View
D1S1
G1
S2
G2
D1
D2
D2
Equivalent Circuit
C2020UD
YY
WW
= Manufacturer’s Marking
C2020UD = Product Type Marking Code
YYWW = Date Code Marking
YY = Year (ex: 09 = 2009)
WW = Week (01 - 53)
ESD PROTECTED TO 2kV
Q1 N-Channel Q2 P-Channel
Source
Gate
Drain
Body
Diode
Gate
Protection
Diode
Source
Gate
Drain
Body
Diode
Gate
Protection
Diode
DMC2020USD
Document number: DS32121 Rev. 4 - 2
2 of 11
www.diodes.com
February 2011
© Diodes Incorporated
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Diodes Incorporated
Maximum Ratings @T
A
= 25°C unless otherwise specified
Characteristic Symbol N-Channel - Q1 P-Channel - Q2 Units
Drain-Source Voltage
V
DSS
20 -20
V
Gate-Source Voltage
V
GSS
±10 ±10
Continuous Drain Current
V
GS
= 4.5V
(Notes 3 & 5)
I
D
8.5 -6.8
A
T
A
= 70°C (Notes 3 & 5)
6.8 -5.4
(Notes 2 & 5) 6.5 -5.2
(Notes 2 & 6) 7.8 -6.3
Pulsed Drain Current
V
GS
= 4.5V
(Notes 4 & 5)
I
DM
33.6 -26.8
Continuous Source Current (Body diode) (Notes 3 & 5)
I
S
4.0 -4.0
Pulsed Source Current (Body diode) (Notes 4 & 5)
I
SM
33.6 -26.8
Thermal Characteristics @T
A
= 25°C unless otherwise specified
Characteristic Symbol N-Channel - Q1 P-Channel - Q2 Unit
Power Dissipation
Linear Derating Factor
(Notes 2 & 5)
P
D
1.25
10
W
mW/°C
(Notes 2 & 6)
1.8
14.3
(Notes 3 & 5)
2.14
17.2
Thermal Resistance, Junction to Ambient
(Notes 2 & 5)
R
θJA
100
°C/W
(Notes 2 & 6)
70
(Notes 3 & 5)
58
Thermal Resistance, Junction to Lead (Notes 5 & 7)
R
θJL
51
Operating and Storage Temperature Range
T
J,
T
STG
-55 to +150 °C
Notes: 2. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
3. Same as note (2), except the device is measured at t ≤ 10 sec.
4. Same as note (2), except the device is pulsed with D = 0.02 and pulse width 300µs.
5. For a dual device with one active die.
6. For a device with two active die running at equal power.
7. Thermal resistance from junction to solder-point (at the end of the drain lead).
DMC2020USD
Document number: DS32121 Rev. 4 - 2
3 of 11
www.diodes.com
February 2011
© Diodes Incorporated
DMC2020USD
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Product Line o
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Diodes Incorporated
Thermal Characteristics
0.1 1 10
10m
100m
1
10
0 25 50 75 100 125 150
0.0
0.5
1.0
1.5
2.0
100µ 1m 10m 100m 1 10 100 1k
0
20
40
60
80
100
100µ 1m 10m 100m 1 10 100 1k
1
10
100
0.1 1 10
10m
100m
1
10
25 mm x 25 mm
1oz FR4
25 mm x 25 mm
1oz FR4
25 mm x 25 mm
1oz FR4
One active die
100us
100ms
1s
R
DS(ON)
Limited
1ms
N-channel Safe Operating Area
Single Pulse
T
amb
= 25°C
One active die
DC
10ms
I
D
Drain Current (A)
V
DS
Drain-Source Voltage (V)
One active die
Two active die
Derating Curve
Max Power Dissipation (W)
Temperature (°C)
D=0.2
D=0.5
D=0.1
Transient Thermal Impedance
Single Pulse
D=0.05
Thermal Resistance (°C/W)
Pulse Width (s)
Single Pulse
T
amb
= 25°C
One active die
Pulse Power Dissipation
Maximum Power (W)
Pulse Width (s)
Single Pulse
T
amb
= 25°C
One active die
1s
DC
100ms
R
DS(ON)
Limited
P-channel Safe Operating Area
-V
DS
Drain-Source Voltage (V)
-I
D
Drain Current (A)
10ms
1ms
100us
P1-P3P4-P6P7-P9P10-P11

DMC2020USD-13

Mfr. #:
Buy DMC2020USD-13
Manufacturer:
Diodes Incorporated
Description:
MOSFET 20V Comp Pair ENH 2kV ESD SO-8 Mosfet
Lifecycle:
New from this manufacturer.
Delivery:
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