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P1-P3P4-P6P7-P9P10-P11
DMC2020USD
Document number: DS32121 Rev. 4 - 2
4 of 11
www.diodes.com
February 2011
© Diodes Incorporated
DMC2020USD
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Electrical Characteristics – Q1 N-CHANNEL @T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
20 - - V
V
GS
= 0V, I
D
= 250μA
Zero Gate Voltage Drain Current
I
DSS
- - 1.0
μA
V
DS
= 20V, V
GS
= 0V
Gate-Source Leakage
I
GSS
- - ±10
μA
V
GS
= ±10V, V
DS
= 0V
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS
(
th
)
0.5 1.1 1.5 V
V
DS
= V
GS
, I
D
= 250μA
Static Drain-Source On-Resistance (Note 8)
R
DS (ON)
-
13 20
mΩ
V
GS
= 4.5V, I
D
= 7A
18 28
V
GS
= 2.5V, I
D
= 3A
Forward Transfer Admittance (Notes 8 & 9)
|Y
fs
|
- 16 - S
V
DS
= 5V, I
D
= 9.4A
Diode Forward Voltage (Note 8)
V
SD
- 0.7 1.2 V
V
GS
= 0V, I
S
= 1.3A
Continuous Source Current
I
S
- - 1.8 A -
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
C
iss
- 1149 -
pF
V
DS
= 10V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance
C
oss
- 157 -
Reverse Transfer Capacitance
C
rss
- 142 -
Gate Resistance
R
g
- 1.51 -
Ω
V
DS
= 0V, V
GS
= 0V, f = 1MHz
Total Gate Charge (Note 10)
Q
g
- 6.0 -
nC
V
GS
= 2.5V
V
DS
= 10V
I
D
= 9.4A
Total Gate Charge (Note 10)
Q
g
- 11.6 -
V
GS
= 4.5V
Gate-Source Charge (Note 10)
Q
g
s
- 2.7 -
Gate-Drain Charge (Note 10)
Q
g
d
- 3.4 -
Turn-On Delay Time (Note 10)
t
D
(
on
)
-
11.67
-
Turn-On Rise Time (Note 10)
t
r
-
12.49
-
ns
V
GS
= 4.5V, V
DS
= 10V,
R
G
= 6Ω , I
D
= 1A
Turn-Off Delay Time (Note 10)
t
D
(
off
)
-
35.89
-
Turn-Off Fall Time (Note 10)
t
f
-
12.33
-
Notes: 8. Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2%
9. For design aid only, not subject to production testing.
10. Switching characteristics are independent of operating junction temperatures.
Typical Characteristics – Q1 N-CHANNEL
0
5
10
15
20
25
30
0 0.5 1 1.5 2
Fig. 1 Typical Output Characteristics
V , DRAIN-SOURCE VOLTAGE (V)
DS
I, D
AIN
EN
(A)
D
V = 1.8V
GS
V = 2.0V
GS
V = 2.5V
GS
V = 3.0V
GS
V = 3.5V
GS
V = 4.0V
GS
V = 4.5V
GS
V = 10V
GS
0 0.5 1 1.5 2 2.5 3
Fig. 2 Typical Transfer Characteristics
V , GATE SOURCE VOLTAGE (V)
GS
0
5
10
15
20
I, D
AIN
EN
(A)
D
V = 5V
DS
T = -55°C
A
T = 25°C
A
T = 125°C
A
T = 150°C
A
T = 85°C
A
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Document number: DS32121 Rev. 4 - 2
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www.diodes.com
February 2011
© Diodes Incorporated
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0
0.01
0.02
0.03
0.04
0 5 10 15 20 25 30
Fig. 3 Typical On-Resistance
vs. Drain Current and Gate Voltage
I , DRAIN-SOURCE CURRENT (A)
D
R , DRAIN-SOURCE ON-RESISTANCE ( )
DS(ON)
Ω
V = 4.5V
GS
V = 2.5V
GS
0 5 10 15 20
I , DRAIN CURRENT (A)
Fig. 4 Typical Drain-Source On-Resistance
vs. Drain Current and Temperature
D
0
0.01
0.02
0.03
0.04
R
, D
R
AI
N
-S
O
U
R
C
E
O
N
-
R
ESIS
T
A
N
C
E ( )
DS(ON)
Ω
V = 4.5V
GS
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
0.6
0.8
1.0
1.2
1.4
1.6
Fig. 5 On-Resistance Variation with Temperature
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE (°C)
J
R , DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
DS(ON)
V = 2.5V
I = 5A
GS
D
V = 4.5V
I = 10A
GS
D
Fig. 6 On-Resistance Variation with Temperature
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE (°C)
J
0
0.01
0.02
0.03
0.04
R
, D
R
AIN-S
O
U
R
C
E
O
N-
R
ESIS
T
AN
C
E ( )
DS(ON)
Ω
V = 4.5V
I = 10A
GS
D
V = 2.5V
I = 5A
GS
D
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
A
V , GATE THRESHOLD VOLTAGE (V)
GS(TH)
I = 1mA
D
I = 250µA
D
0
5
10
15
20
25
30
0 0.2 0.4 0.6 0.8 1.0 1.2
V , SOURCE-DRAIN VOLTAGE (V)
SD
Fig. 8 Diode Forward Voltage vs. Current
I, S
E
E
(A)
S
T = 25°C
A
DMC2020USD
Document number: DS32121 Rev. 4 - 2
6 of 11
www.diodes.com
February 2011
© Diodes Incorporated
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Diodes Incorporated
10
100
1,000
10,000
048121620
Fig. 9 Typical Capacitance
V , DRAIN-SOURCE VOLTAGE (V)
DS
,
A
A
I
AN
E (p
)
f = 1MHz
C
iss
C
oss
C
rss
0 5 10 15 20
Fig. 10 Typical Drain-Source Leakage Current
vs. Drain-Source Voltage
V , DRAIN-SOURCE VOLTAGE (V)
DS
1
10
100
1,000
100,000
I, D
AI
-S
E LEAKA
E
E
(nA)
DSS
10,000
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
0 5 10 15 20 25
Q , OTAL GATE CHARGE (nC)
Fig. 11 Gate-Source Voltage vs. Total Gate Charge
g
T
0
2
4
6
8
10
V, A
T
E-S
O
U
R
C
E V
O
L
T
A
G
E(V)
GS
G
V = 10V
I = 9.4A
DS
D
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MOSFET 20V Comp Pair ENH 2kV ESD SO-8 Mosfet
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