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P1-P3P4-P6P7-P9P10-P11
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Document number: DS32121 Rev. 4 - 2
7 of 11
www.diodes.com
February 2011
© Diodes Incorporated
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Electrical Characteristics – Q2 P-CHANNEL
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
-20 - - V
V
GS
= 0V, I
D
= -250μA
Zero Gate Voltage Drain Current
I
DSS
- - -1.0
μA
V
DS
= -20V, V
GS
= 0V
Gate-Source Leakage
I
GSS
- - ±10
μA
V
GS
= ±8V, V
DS
= 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V
GS
(
th
)
-0.4 -0.7 -1.0 V
V
DS
= V
GS
, I
D
= -250μA
Static Drain-Source On-Resistance (Note 11)
R
DS (ON)
-
26 33
mΩ
V
GS
= -4.5V, I
D
= -6A
33 45
V
GS
= -2.5V, I
D
= -3A
Forward Transfer Admittance (Note 11 & 12)
|Y
fs
|
- 14 - S
V
DS
= -5V, I
D
= -4A
Diode Forward Voltage (Note 11)
V
SD
- -0.7 -1.0 V
V
GS
= 0V, I
S
= -1A
Continuous Source Current
I
S
- - -1.8 A -
DYNAMIC CHARACTERISTICS (Note 12)
Input Capacitance
C
iss
- 1610 -
pF
V
DS
= -10V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance
C
oss
- 157 -
Reverse Transfer Capacitance
C
rss
- 145 -
Gate Resistance
R
g
- 9.45 -
Ω
V
DS
= 0V, V
GS
= 0V, f = 1MHz
Total Gate Charge (Note 13)
Q
g
- 8.0 -
nC
V
GS
= -2.5V
V
DS
= -10V
I
D
= -4A
Total Gate Charge (Note 13)
Q
g
- 15.4 -
V
GS
= -4.5V
Gate-Source Charge (Note 13)
Q
g
s
- 2.5 -
Gate-Drain Charge (Note 13)
Q
g
d
- 3.3 -
Turn-On Delay Time (Note 13)
t
D
(
on
)
-
16.8
-
ns
V
GS
= -4.5V, V
DS
= -10V,
R
G
= 6Ω , I
D
= -1A
Turn-On Rise Time (Note 13)
t
r
-
12.4
-
Turn-Off Delay Time (Note 13)
t
D
(
off
)
-
94.1
-
Turn-Off Fall Time (Note 13)
t
f
-
42.4
-
Notes: 11. Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2%
12. For design aid only, not subject to production testing.
13. Switching characteristics are independent of operating junction temperatures.
Typical Characteristics – Q2 P-CHANNEL
0 0.5 1.0 1.5 2.0
Fig. 12 Typical Output Characteristics
-V , DRAIN-SOURCE VOLTAGE (V)
DS
0
5
10
15
30
-I , D
AI
E
(A)
D
20
25
V = -1.8V
GS
V = -2.0V
GS
V = -2.5V
GS
V = -3.0V
GS
V = -3.5V
GS
V = -4.0V
GS
V = -4.5V
GS
V = -10V
GS
0
5
10
15
20
-I , D
R
AI
N
C
U
R
R
E
N
T
(A)
D
0 0.5 1 1.5 2 2.5 3
Fig. 13 Typical Transfer Characteristics
-V , GATE SOURCE VOLTAGE (V)
GS
V = -5V
DS
T = -55°C
A
T = 25°C
A
T = 125°C
A
T = 150°C
A
T = 85°C
A
DMC2020USD
Document number: DS32121 Rev. 4 - 2
8 of 11
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February 2011
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0
0.01
0.02
0.03
0.04
0.05
0.06
0 5 10 15 20 25 30
Fig. 14 Typical On-Resistance
vs. Drain Current and Gate Voltage
-I , DRAIN-SOURCE CURRENT (A)
D
R
, D
R
AIN-S
O
U
R
C
E
O
N-
R
ESIS
T
AN
C
E ( )
DS(ON)
Ω
-V = 2.5V
GS
-V = 4.5V
GS
0 5 10 15 20
-I , DRAIN CURRENT (A)
Fig. 15 Typical Drain-Source On-Resistance
vs. Drain Current and Temperature
D
0
0.01
0.02
0.03
0.04
0.05
0.06
, D
AI
-S
E
-
ESIS
A
E ( )
DS(ON)
Ω
V = 4.5V
GS
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
Fig. 16 On-Resistance Variation with Temperature
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE (°C)
J
0.6
0.8
1.0
1.2
1.4
1.6
R
, D
R
AIN-S
O
U
R
C
E
ON-RESISTANCE (NORMALIZED)
DS(ON)
-V = 4.5V
-I = 10A
GS
D
-V = 2.5V
-I = 5A
GS
D
Fig. 17 On-Resistance Variation with Temperature
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE (°C)
J
0
0.01
0.02
0.03
0.04
0.05
0.06
, D
AIN-S
E
N-
ESIS
AN
E ( )
DS(ON)
Ω
-V = 4.5V
-I = 10A
GS
D
-V = 2.5V
-I = 5A
GS
D
Fig. 18 Gate Threshold Variation vs. Ambient Temperature
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
A
0
0.2
0.4
0.6
0.8
1.0
1.
2
V,
A
E
ES
LD V
L
A
E (V)
GS(TH)
-I = 1mA
D
-I = 250µA
D
0
5
10
15
20
25
30
0 0.2 0.4 0.6 0.8 1.0 1.2
-V , SOURCE-DRAIN VOLTAGE (V)
SD
Fig. 19 Diode Forward Voltage vs. Current
-I , S
O
U
R
C
E
C
U
R
R
EN
T
(A)
S
T = 25°C
A
DMC2020USD
Document number: DS32121 Rev. 4 - 2
9 of 11
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February 2011
© Diodes Incorporated
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10
100
1,000
10,000
048121620
Fig. 20 Typical Capacitance
-V , DRAIN-SOURCE VOLTAGE (V)
DS
,
A
A
I
AN
E (p
)
f = 1MHz
C
iss
C
oss
C
rss
0 5 10 15 20
Fig. 21 Typical Drain-Source Leakage Current
vs. Drain-Source Voltage
-V , DRAIN-SOURCE VOLTAGE (V)
DS
1
10
100
1,000
100,000
-I , D
R
AIN-S
O
U
R
C
E LEAKA
G
E
C
U
R
R
EN
T
(nA)
DSS
10,000
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
0
2
4
6
8
10
0 5 10 15 20 25 30 35
Q , OTAL GATE CHARGE (nC)
Fig. 22 Gate-Source Voltage vs. Total Gate Charge
g
T
-V , ATE-SOURCE VOLTAGE (V)
GS
G
V = -10V
I = -4A
DS
D
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MOSFET 20V Comp Pair ENH 2kV ESD SO-8 Mosfet
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