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BUK664R4-55C,118

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P17
BUK664R4-55C All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 03 — 21 December 2010 9 of 16
NXP Semiconductors
BUK664R4-55C
N-channel TrenchMOS intermediate level FET
Fig 11. Gate-source threshold voltage as a function of
junction temperature
Fig 12. Sub-threshold drain current as a function of
gate-source voltage
Fig 13. Drain-source on-state resistance as a function
of drain current; typical values
Fig 14. Drain-source on-state resistance as a function
of drain current; typical values
003aac337
0
1
2
3
-60 0 60 120 180
T
j
(°C)
V
GS(th)
(V)
max
typ
min
003aab271
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
0123
V
GS
(V)
I
D
(A)
maxtypmin
003aaf017
0
10
20
30
40
0 204060
I
D
(A)
R
DSon
(m
Ω
)
4.5
4.0
10.0
3.6
3.0
3.4
V
GS
(V) = 3.5
3.8
3.2
003aae855
0
4
8
12
16
0 50 100 150 200
I
D
(A)
R
DSon
(mΩ)
6.0
4.5
10.0
3.8
V
GS
(V) =
5.0
4.0
BUK664R4-55C All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 03 — 21 December 2010 10 of 16
NXP Semiconductors
BUK664R4-55C
N-channel TrenchMOS intermediate level FET
Fig 15. Normalized drain-source on-state resistance
factor as a function of junction temperature
Fig 16. Gate-source voltage as a function of gate
charge; typical values
T
j
= 25°C; I
D
= 25 A
Fig 17. Gate charge waveform definitions Fig 18. Gate-source voltage as a function of gate
charge; typical values
003aad803
0
0.5
1
1.5
2
2.5
-60 0 60 120 180
T
j
(
°
C)
a
003aaf019
0
2
4
6
8
10
0 10203040
Q
G
(nC)
V
GS
(V)
V
DS
= 6V
15V
24V
003aaa508
V
GS
V
GS(th)
Q
GS1
Q
GS2
Q
GD
V
DS
Q
G(tot)
I
D
Q
GS
V
GS(pl)
003aae713
0
2
4
6
8
10
0 50 100 150
Q
G
(nC)
V
GS
(V)
V
DS
= 14 V
V
DS
= 44 V
BUK664R4-55C All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 03 — 21 December 2010 11 of 16
NXP Semiconductors
BUK664R4-55C
N-channel TrenchMOS intermediate level FET
V
GS
= 0 V; f = 1 MHz V
GS
= 0 V
Fig 19. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
Fig 20. Source (diode forward) current as a function of
source-drain (diode forward) voltage; typical
values
003aae714
10
2
10
3
10
4
10
−2
10
−1
1 10 10
2
V
DS
(V)
C
(pF)
C
iss
C
rss
C
oss
10
5
003aae716
0
40
80
120
160
0 0.4 0.8 1.2
V
SD
(V)
I
S
(A)
T
j
= 25 °CT
j
= 175 °C
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BUK664R4-55C,118

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Buy BUK664R4-55C,118
Manufacturer:
Nexperia
Description:
MOSFET N-CHAN 55V 100A
Lifecycle:
New from this manufacturer.
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