BUK664R4-55C All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 03 — 21 December 2010 7 of 16
NXP Semiconductors
BUK664R4-55C
N-channel TrenchMOS intermediate level FET
Q
GS
gate-source charge I
D
=25A; V
DS
=44V; V
GS
=10V;
see Figure 18
; see Figure 17
-19-nC
Q
GD
gate-drain charge - 31.5 - nC
C
iss
input capacitance V
GS
=0V; V
DS
=25V; f=1MHz;
T
j
= 25 °C; see Figure 19
- 5800 7750 pF
C
oss
output capacitance - 550 660 pF
C
rss
reverse transfer capacitance - 380 520 pF
t
d(on)
turn-on delay time V
DS
=45V; R
L
=1.8Ω; V
GS
=10V;
R
G(ext)
=10Ω
-25-ns
t
r
rise time - 65 - ns
t
d(off)
turn-off delay time - 252 - ns
t
f
fall time -116-ns
L
D
internal drain inductance from source lead to source bond
pad ; T
j
=25°C
-7.5-nH
L
S
internal source inductance from upper edge of drain mounting
base to centre of die ; T
j
=25°C
-3.5-nH
Source-drain diode
V
SD
source-drain voltage I
S
=25A; V
GS
=0V; T
j
=25°C;
see Figure 20
- 0.83 1.2 V
t
rr
reverse recovery time I
S
=20A; dI
S
/dt = -100 A/µs;
V
GS
=0V; V
DS
=25V
-55-ns
Q
r
recovered charge - 112 - nC
Table 6. Characteristics
…continued
Symbol Parameter Conditions Min Typ Max Unit
T
j
= 25°C; V
DS
= 25 V
Fig 5. Forward transconductance as a function of
drain current; typical values
Fig 6. Output characteristics: drain current as a
function of drain-source voltage; typical values
003aae708
0
40
80
120
160
0 20406080
I
D
(A)
g
fs
(S)
003aae852
0
50
100
150
200
250
00.511.52
V
DS
(V)
I
D
(A)
3.8
4.0
4.5
5.0
6.0
3.2
V
GS
(V) = 10
3.4
3.6
