BUK664R4-55C All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 03 — 21 December 2010 3 of 16
NXP Semiconductors
BUK664R4-55C
N-channel TrenchMOS intermediate level FET
4. Limiting values
[1] -16 V accumulated duration not to exceed 168 hrs.
[2] Accumulated pulse duration not to exceed 5 mins.
[3] Continuous current is limited by package.
[4] Single-pulse avalanche rating limited by maximum junction temperature of 175 °C.
[5] Repetitive avalanche rating limited by an average junction temperature of 170 °C.
[6] Refer to application note AN10273 for further information.
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
DS
drain-source voltage T
j
≥ 25 °C; T
j
≤ 175 °C - 55 V
V
GS
gate-source voltage DC
[1]
-16 16 V
pulsed
[2]
-20 20 V
I
D
drain current T
mb
=25°C; V
GS
=10V; see Figure 1
[3]
- 100 A
T
mb
= 100 °C; V
GS
=10V; see Figure 1 -97A
I
DM
peak drain current T
mb
= 25 °C; pulsed; t
p
≤ 10 µs;
see Figure 3
- 550 A
P
tot
total power dissipation T
mb
=25°C; see Figure 2 - 204 W
T
stg
storage temperature -55 175 °C
T
j
junction temperature -55 175 °C
Source-drain diode
I
S
source current T
mb
=25°C
[3]
- 100 A
I
SM
peak source current pulsed; t
p
≤ 10 µs; T
mb
= 25 °C - 550 A
Avalanche ruggedness
E
DS(AL)S
non-repetitive drain-source
avalanche energy
I
D
= 100 A; V
sup
≤ 55 V; R
GS
=50Ω;
V
GS
=10V; T
j(init)
=25°C
- 263 mJ
E
DS(AL)R
repetitive drain-source
avalanche energy
[4][5][6]
--J
