OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

MT18HTF12872PDZ-667G1

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P19
DDR2 SDRAM RDIMM
MT18HTF12872PDZ – 1GB
MT18HTF25672PDZ – 2GB
MT18HTF51272PDZ – 4GB
Features
•
240-pin, registered dual in-line memory module
•
Fast data transfer rates: PC2-3200, PC2-4200,
PC2-5300, or PC2-6400
•
1GB (128 Meg x 72), 2GB (256 Meg x 72), 4GB (512
Meg x 72)
•
Supports ECC error detection and correction
•
V
DD
= V
DDQ
= +1.8V
•
V
DDSPD
= 1.7–3.6V
•
JEDEC-standard 1.8V I/O (SSTL_18-compatible)
•
Differential data strobe (DQS, DQS#) option
•
4n-bit prefetch architecture
•
Dual rank
•
Multiple internal device banks for concurrent
operation
•
Programmable CAS# latency (CL)
•
Posted CAS# additive latency (AL)
•
WRITE latency = READ latency - 1
t
CK
•
Programmable burst lengths (BL): 4 or 8
•
Adjustable data-output drive strength
•
64ms, 8192-cycle refresh
•
On-die termination (ODT)
•
Serial presence-detect (SPD) with EEPROM
•
Gold edge contacts
•
Halogen-free
Figure 1: 240-Pin RDIMM (MO-237 R/C G)
Module height: 30mm (1.181in)
Options Marking
•
Parity P
•
Operating temperature
– Commercial (0°C ≤ T
A
≤ +70°C)
None
– Industrial (–40°C ≤ T
A
≤ +85°C)
1
T
•
Package
–
240-pin DIMM (halogen-free) Z
•
Frequency/CL
2
–
2.5ns @ CL = 5 (DDR2-800) -80E
–
2.5ns @ CL = 6 (DDR2-800) -800
–
3.0ns @ CL = 5 (DDR2-667) -667
Notes:
1. Contact Micron for industrial temperature
module offerings.
2. CL = CAS (READ) latency; registered mode
will add one clock cycle to CL.
Table 1: Key Timing Parameters
Speed
Grade
Industry
Nomenclature
Data Rate (MT/s) t
RCD
(ns)
t
RP
(ns)
t
RC
(ns)CL = 6 CL = 5 CL = 4 CL = 3
-80E PC2-6400 800 800 533 400 12.5 12.5 55
-800 PC2-6400 800 667 533 400 15 15 55
-667 PC2-5300
–
667 553 400 15 15 55
-53E PC2-4200
– –
553 400 15 15 55
-40E PC2-3200
– –
400 400 15 15 55
1GB, 2GB, 4GB (x72, ECC, DR) 240-Pin DDR2 SDRAM RDIMM
Features
PDF: 09005aef83d3d893
htf18c128_256_512x72pdz.pdf - Rev. D 11/10 EN
1
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2009 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are subject to change by Micron without notice.
Table 2: Addressing
Parameter 1GB 2GB 4GB
Refresh count 8K 8K 8K
Row address 16K A[13:0] 16K A[13:0] 32K A[14:0]
Device bank address 4 BA[1:0] 8 BA[2:0] 8 BA[2:0]
Device configuration 512Mb (64 Meg x 8) 1Gb (128 Meg x 8) 2Gb (256 Meg x8)
Column address 1K A[9:0] 1K A[9:0] 1K A[9:0]
Module rank address 2 S#[1:0] 2 S#[1:0] 2 S#[1:0]
Table 3: Part Numbers and Timing Parameters – 1GB
Base device: MT47H64M8,
1
512Mb DDR2 SDRAM
Part Number
2
Module
Density Configuration
Module
Bandwidth
Memory Clock/
Data Rate
Clock Cycles
(CL-
t
RCD-
t
RP)
MT18HTF12872PDZ-80E__ 1GB 128 Meg x 72 6.4 GB/s 2.5ns/800 MT/s 5-5-5
MT18HTF12872PTZ-80E__ 1GB 128 Meg x 72 6.4 GB/s 2.5ns/800 MT/s 5-5-5
MT18HTF12872PDZ-800__ 1GB 128 Meg x 72 6.4 GB/s 2.5ns/800 MT/s 6-6-6
MT18HTF12872PTZ-800__ 1GB 128 Meg x 72 6.4 GB/s 2.5ns/800 MT/s 6-6-6
MT18HTF12872PDZ-667__ 1GB 128 Meg x 72 5.3 GB/s 3.0ns/667 MT/s 5-5-5
MT18HTF12872PTZ-667__ 1GB 128 Meg x 72 5.3 GB/s 3.0ns/667 MT/s 5-5-5
Table 4: Part Numbers and Timing Parameters – 2GB
Base device: MT47H128M8,
1
1Gb DDR2 SDRAM
Part Number
2
Module
Density Configuration
Module
Bandwidth
Memory Clock/
Data Rate
Clock Cycles
(CL-
t
RCD-
t
RP)
MT18HTF25672PDZ-80E__ 2GB 256 Meg x 72 6.4 GB/s 2.5ns/800 MT/s 5-5-5
MT18HTF25672PTZ-80E__ 2GB 256 Meg x 72 6.4 GB/s 2.5ns/800 MT/s 5-5-5
MT18HTF25672PDZ-800__ 2GB 256 Meg x 72 6.4 GB/s 2.5ns/800 MT/s 6-6-6
MT18HTF25672PTZ-800__ 2GB 256 Meg x 72 6.4 GB/s 2.5ns/800 MT/s 6-6-6
MT18HTF25672PDZ-667__ 2GB 256 Meg x 72 5.3 GB/s 3.0ns/667 MT/s 5-5-5
MT18HTF25672PTZ-667__ 2GB 256 Meg x 72 5.3 GB/s 3.0ns/667 MT/s 5-5-5
Table 5: Part Numbers and Timing Parameters – 4GB
Base device: MT47H256M8,
1
2Gb DDR2 SDRAM
Part Number
2
Module
Density Configuration
Module
Bandwidth
Memory Clock/
Data Rate
Clock Cycles
(CL-
t
RCD-
t
RP)
MT18HTF51272PDZ-80E__ 4GB 512 Meg x 72 6.4 GB/s 2.5ns/800 MT/s 5-5-5
MT18HTF51272PTZ-80E__ 4GB 512 Meg x 72 6.4 GB/s 2.5ns/800 MT/s 5-5-5
MT18HTF51272PDZ-800__ 4GB 512 Meg x 72 6.4 GB/s 2.5ns/800 MT/s 6-6-6
MT18HTF51272PTZ-800__ 4GB 512 Meg x 72 6.4 GB/s 2.5ns/800 MT/s 6-6-6
1GB, 2GB, 4GB (x72, ECC, DR) 240-Pin DDR2 SDRAM RDIMM
Features
PDF: 09005aef83d3d893
htf18c128_256_512x72pdz.pdf - Rev. D 11/10 EN
2
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2009 Micron Technology, Inc. All rights reserved.
Table 5: Part Numbers and Timing Parameters – 4GB (Continued)
Base device: MT47H256M8,
1
2Gb DDR2 SDRAM
Part Number
2
Module
Density Configuration
Module
Bandwidth
Memory Clock/
Data Rate
Clock Cycles
(CL-
t
RCD-
t
RP)
MT18HTF51272PDZ-667__ 4GB 512 Meg x 72 5.3 GB/s 3.0ns/667 MT/s 5-5-5
MT18HTF51272PTZ-667__ 4GB 512 Meg x 72 5.3 GB/s 3.0ns/667 MT/s 5-5-5
Notes:
1. Data sheets for the base device can be found on Micron’s Web site.
2. All part numbers end with a two-place code (not shown) that designates component and PCB revisions. Con-
sult factory for current revision codes. Example: MT18HTF25672PDZ-667H1.
1GB, 2GB, 4GB (x72, ECC, DR) 240-Pin DDR2 SDRAM RDIMM
Features
PDF: 09005aef83d3d893
htf18c128_256_512x72pdz.pdf - Rev. D 11/10 EN
3
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2009 Micron Technology, Inc. All rights reserved.
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P19

MT18HTF12872PDZ-667G1

Mfr. #:
Buy MT18HTF12872PDZ-667G1
Manufacturer:
Micron
Description:
MODULE DDR2 SDRAM 1GB 240RDIMM
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet