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IRGP4650DPBF

P1-P3P4-P6P7-P9P10-P12
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
IRGP4650DPbF
IRGP4650D-EPbF
TO-247AC
IRGP4650DPbF
TO-247AD
IRGP4650D-EP
E
G
n-channel
C
GC E
Gate Collector Emitter
Applications
• Industrial Motor Drive
• Inverters
• UPS
• Welding
V
CES
= 600V
I
C
= 50A, T
C
= 100°C
t
SC
≥ 5μs, T
J(max)
= 175°C
V
CE(on)
typ. = 1.60V @ I
C
= 35A
Form Quantity
IRGP4650DPbF TO-247AC Tube 25 IRGP4650DPbF
IRGP4650D-EPbF TO-247AD Tube 25 IRGP4650D-EPbF
Base part number Package Type
Standard Pack
Orderable part number
Features Benefits
Low V
CE(ON)
and Switching Losses
High efficiency in a wide range of applications and switching
frequencies
Square RBSOA and Maximum Junction Temperature 175°C
Improved reliability due to rugged hard switching performance
and higher power capability
Positive V
CE (ON)
Temperature Coefficient Excellent current sharing in parallel operation
5μs short circuit SOA Enables short circuit protection scheme
Lead-Free, RoHS compliant Environmentally friendly
G
G
C
E
C
C
E
C
www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 17, 2014
1
Absolute Maximum Ratings
Parameter Max. Units
V
CES
Collector-to-Emitter Voltage 600 V
I
C
@ T
C
= 25°C
Continuous Collector Current 76
I
C
@ T
C
= 100°C
Continuous Collector Current 50
I
CM
Pulse Collector Current, V
GE
= 15V
105 A
I
LM
Clamped Inductive Load Current, V
GE
= 20V
140
I
F
@ T
C
= 25°C
Diode Continous Forward Current 76
I
F
@ T
C
= 100°C
Diode Continous Forward Current 50
I
FM
Diode Maximum Forward Current
140
V
GE
Continuous Gate-to-Emitter Voltage ±20 V
Transient Gate-to-Emitter Voltage ±30
P
D
@ T
C
= 25°C
Maximum Power Dissipation 268
P
D
@ T
C
= 100°C
Maximum Power Dissipation 134
T
J
Operating Junction and -55 to +175
T
STG
Storage Temperature Range °C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw 10 lbf·in (1.1 N·m)
Thermal Resistance
Parameter Min. Typ. Max. Units
R
θ
JC
(IGBT)
Junction-to-Case (IGBT)
––– ––– 0.56
R
θ
JC
(Diode)
Junction-to-Case (Diode)
––– ––– 1.0
R
θ
CS
Case-to-Sink (flat, greased surface) ––– 0.24 –––
R
θ
JA
Junction-to-Ambient (typical socket mount) ––– ––– 40
°C/W
W
IRGP4650DPbF/IRGP4650D-EPbF
www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 17, 2014
2
Notes:
V
CC
= 80% (V
CES
), V
GE
= 20V, L = 19μH, R
G
= 10Ω.
R
θ
is measured at T
J
of approximately 90°C.
Refer to AN-1086 for guidelines for measuring V
(BR)CES
safely.
Pulse width limited by max. junction temperature.
Values influenced by parasitic L and C in measurement.
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)CES
Collector-to-Emitter Breakdown Voltage 600 — — V V
GE
= 0V, I
C
= 100μA
Δ
V
(BR)CES
/
Δ
T
J
Temperature Coeff. of Breakdown Voltage — 1.3 — mV/°C V
GE
= 0V, I
C
= 1mA (25°C-175°C)
— 1.60 1.90 I
C
= 35A, V
GE
= 15V, T
J
= 25°C
V
CE(on)
Collector-to-Emitter Saturation Voltage — 1.90 — V I
C
= 35A, V
GE
= 15V, T
J
= 150°C
—2.00— I
C
= 35A, V
GE
= 15V, T
J
= 175°C
V
Gate Threshold Voltage 4.0 — 6.5 V V
CE
= V
GE
, I
C
= 1.0mA
Δ
V
/
Δ
TJ Threshold Voltage temp. coefficient — -18 — mV/°C V
CE
= V
GE
, I
C
= 1.0mA (25°C - 175°C)
gfe Forward Transconductance — 25 — S V
CE
= 50V, I
C
= 35A, PW = 60μs
I
CES
Collector-to-Emitter Leakage Current — 1.0 70 μAV
GE
= 0V, V
CE
= 600V
— 770 — V
GE
= 0V, V
CE
= 600V, T
J
= 175°C
V
FM
Diode Forward Voltage Drop — 2.0 3.0 V I
F
= 35A
—1.4— I
F
= 35A, T
J
= 175°C
I
GES
Gate-to-Emitter Leakage Current — — ±100 nA V
GE
= ±20V
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units
Q
g
Total Gate Charge (turn-on) — 69 104 I
C
= 35A
Q
ge
Gate-to-Emitter Charge (turn-on) — 18 27 nC V
GE
= 15V
Q
gc
Gate-to-Collector Charge (turn-on) — 29 44 V
CC
= 400V
E
on
Turn-On Switching Loss — 390 508 I
C
= 35A, V
CC
= 400V, V
GE
= 15V
E
off
Turn-Off Switching Loss — 632 753 μJR
G
= 10
Ω
, L = 200μH, L
S
= 150nH, T
J
= 25°C
E
total
Total Switching Loss — 1022 1261
Energy losses include tail & diode reverse recovery
t
d(on)
Turn-On delay time — 46 56 I
C
= 35A, V
CC
= 400V, V
GE
= 15V
t
r
Rise time —3342nsR
G
= 10
Ω
, L = 200μH, L
S
= 150nH, T
J
= 25°C
t
d(off)
Turn-Off delay time — 105 117
t
f
Fall time — 44 54
E
on
Turn-On Switching Loss — 1013 — I
C
= 35A, V
CC
= 400V, V
GE
=15V
E
off
Turn-Off Switching Loss — 929 — μJR
G
=10Ω, L=200μH, L
S
=150nH, T
J
= 175°C
E
total
Total Switching Loss — 1942 —
Energy losses include tail & diode reverse recovery
t
d(on)
Turn-On delay time — 43 — I
C
= 35A, V
CC
= 400V, V
GE
= 15V
t
r
Rise time — 35 — ns R
G
= 10
Ω
, L = 200μH, L
S
= 150nH
t
d(off)
Turn-Off delay time — 127 — T
J
= 175°C
t
f
Fall time — 61 —
C
ies
Input Capacitance — 2113 — pF V
GE
= 0V
C
oes
Output Capacitance — 197 — V
CC
= 30V
C
res
Reverse Transfer Capacitance — 65 — f = 1.0Mhz
T
J
= 175°C, I
C
= 140A
RBSOA Reverse Bias Safe Operating Area FULL SQUARE V
CC
= 480V, Vp 600V
Rg = 10
Ω
, V
GE
= +20V to 0V
SCSOA Short Circuit Safe Operating Area V
CC
= 400V, Vp 600V
Rg = 10
Ω
, V
GE
= +15V to 0V
Erec Reverse Recovery Energy of the Diode — 304 — μJT
J
= 175°C
t
rr
Diode Reverse Recovery Time — 120 — ns V
CC
= 400V, I
F
= 35A
I
rr
Peak Reverse Recovery Current — 25 — A V
GE
= 15V, Rg = 10
Ω
, L =210μH, L
s
= 150nH
Conditions
μs5——
IRGP4650DPbF/IRGP4650D-EPbF
www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 17, 2014
3
Fig. 1 - Maximum DC Collector Current vs.
Case Temperature
Fig. 2 - Power Dissipation vs. Case
Temperature
Fig. 3 - Forward SOA
T
C
= 25°C, T
J
≤ 175°C; V
GE
=15V
Fig. 4 - Reverse Bias SOA
T
J
= 175°C; V
GE
=20V
Fig. 5 - Typ. IGBT Output Characteristics
T
J
= -40°C; tp = ≤60μs
Fig. 6 - Typ. IGBT Output Characteristics
T
J
= 25°C; tp = ≤60μs
25 50 75 100 125 150 175
T
C
(°C)
0
10
20
30
40
50
60
70
80
I
C
(
A
)
25 50 75 100 125 150 175
T
C
(°C)
0
50
100
150
200
250
300
P
t
o
t
(
W
)
10 100 1000
V
CE
(V)
1
10
100
1000
I
C
(
A
)
0 2 4 6 8 10
V
CE
(V)
0
20
40
60
80
100
120
140
I
C
E
(
A
)
V
GE
= 18V
V
GE
= 15V
V
GE
= 12V
V
GE
= 10V
V
GE
= 8.0V
0 2 4 6 8 10
V
CE
(V)
0
20
40
60
80
100
120
140
I
C
E
(
A
)
V
GE
= 18V
V
GE
= 15V
V
GE
= 12V
V
GE
= 10V
V
GE
= 8.0V
1 10 100 1000
V
CE
(V)
0.1
1
10
100
1000
I
C
(
A
)
10μsec
100μsec
Tc = 25°C
Tj = 175°C
Single Pulse
DC
1msec
P1-P3P4-P6P7-P9P10-P12

IRGP4650DPBF

Mfr. #:
Buy IRGP4650DPBF
Manufacturer:
Infineon Technologies
Description:
IGBT Transistors 600V UltraFast IGBT 50A 268W 104nC
Lifecycle:
New from this manufacturer.
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