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IRGP4650DPBF

P1-P3P4-P6P7-P9P10-P12
IRGP4650DPbF/IRGP4650D-EPbF
www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 17, 2014
4
Fig. 7 - Typ. IGBT Output Characteristics
T
J
= 175°C; tp = ≤60μs
Fig. 8 - Typ. Diode Forward Characteristics
tp = 80μs
Fig. 10 - Typical V
CE
vs. V
GE
T
J
= 25°C
Fig. 11 - Typical V
CE
vs. V
GE
T
J
= 175°C
Fig. 12 - Typ. Transfer Characteristics
V
CE
= 50V; tp = 60μs
Fig. 9 - Typical V
CE
vs. V
GE
T
J
= -40°C
0 2 4 6 8 10
V
CE
(V)
0
20
40
60
80
100
120
140
I
C
E
(
A
)
V
GE
= 18V
V
GE
= 15V
V
GE
= 12V
V
GE
= 10V
V
GE
= 8.0V
0.0 1.0 2.0 3.0 4.0
V
F
(V)
0
20
40
60
80
100
120
140
I
F
(
A
)
-40°C
25°C
175°C
5 101520
V
GE
(V)
0
2
4
6
8
10
12
14
16
18
20
V
C
E
(
V
)
I
CE
= 18A
I
CE
= 35A
I
CE
= 70A
5 101520
V
GE
(V)
0
2
4
6
8
10
12
14
16
18
20
V
C
E
(
V
)
I
CE
= 18A
I
CE
= 35A
I
CE
= 70A
5101520
V
GE
(V)
0
2
4
6
8
10
12
14
16
18
20
V
C
E
(
V
)
I
CE
= 18A
I
CE
= 35A
I
CE
= 70A
4 5 6 7 8 9 10 11 12 13 14
V
GE,
Gate-to-Emitter Voltage
(V)
0
20
40
60
80
100
120
140
I
C
,
C
o
l
l
e
c
t
o
r
-
t
o
-
E
m
i
t
t
e
r
C
u
r
r
e
n
t
(
A
)
T
J
= 175°C
T
J
= 25°C
IRGP4650DPbF/IRGP4650D-EPbF
www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 17, 2014
5
Fig. 13 - Typ. Energy Loss vs. I
C
T
J
= 175°C; L = 200μH; V
CE
= 400V, R
G
= 10Ω; V
GE
= 15V
Fig. 14 - Typ. Switching Time vs. I
C
T
J
= 175°C; L = 200μH; V
CE
= 400V, R
G
= 10Ω; V
GE
= 15V
Fig. 15 - Typ. Energy Loss vs. R
G
T
J
= 175°C; L = 210μH; V
CE
= 400V, I
CE
= 35A; V
GE
= 15V
Fig. 16 - Typ. Switching Time vs. R
G
T
J
= 175°C; L = 210μH; V
CE
= 400V, I
CE
= 35A; V
GE
= 15V
Fig. 17 - Typ. Diode I
RR
vs. I
F
T
J
= 175°C
Fig. 18 - Typ. Diode I
RR
vs. R
G
T
J
= 175°C
0 10203040506070
I
C
(A)
0
500
1000
1500
2000
2500
3000
3500
4000
E
n
e
r
g
y
(
μ
J
)
E
OFF
E
ON
0 10 20 30 40 50 60 70
I
C
(A)
10
100
1000
S
w
i
c
h
i
n
g
T
i
m
e
(
n
s
)
t
R
td
OFF
t
F
td
ON
0 255075100
Rg (
Ω
)
500
1000
1500
2000
2500
3000
E
n
e
r
g
y
(
μ
J
)
E
OFF
E
ON
0 10 20 30 40 50
R
G
(Ω)
10
100
1000
S
w
i
c
h
i
n
g
T
i
m
e
(
n
s
)
t
R
td
OFF
t
F
td
ON
10 20 30 40 50 60 70
I
F
(A)
10
15
20
25
30
35
I
R
R
(
A
)
R
G =
100Ω
R
G =
10Ω
R
G =
22Ω
R
G =
47Ω
0 20 40 60 80 100
R
G
(
Ω)
14
16
18
20
22
24
26
I
R
R
(
A
)
IRGP4650DPbF/IRGP4650D-EPbF
www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 17, 2014
6
Fig. 19 - Typ. Diode I
RR
vs. di
F
/dt
V
CC
= 400V; V
GE
= 15V; I
F
= 35A; T
J
= 175°C
Fig. 20 - Typ. Diode Q
RR
vs. di
F
/dt
V
CC
= 400V; V
GE
= 15V; T
J
= 175°C
Fig. 23 - Typ. Capacitance vs. V
CE
V
GE
= 0V; f = 1MHz
Fig. 24 - Typical Gate Charge
vs. V
GE
I
CE
= 35A; L = 740μH
Fig. 21 - Typ. Diode E
RR
vs. I
F
T
J
= 175°C
Fig. 22 - V
GE
vs. Short Circuit Time
V
CC
= 400V; T
C
= 25°C
0 100 200 300 400 500
V
CE
(V)
10
100
1000
10000
C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
Cies
Coes
Cres
0 10203040506070
Q
G
, Total Gate Charge (nC)
0
2
4
6
8
10
12
14
16
V
G
E
,
G
a
t
e
-
t
o
-
E
m
i
t
t
e
r
V
o
l
t
a
g
e
(
V
)
V
CES
= 400V
V
CES
= 300V
200 300 400 500 600 700
di
F
/dt (A/μs)
14
16
18
20
22
24
26
I
R
R
(
A
)
10 20 30 40 50 60 70
I
F
(A)
100
150
200
250
300
350
400
E
n
e
r
g
y
(
μ
J
)
R
G
= 100Ω
R
G
= 47Ω
R
G
= 22Ω
R
G
= 10
Ω
8 1012141618
V
GE
(V)
0
5
10
15
20
T
i
m
e
(
μ
s
)
0
75
150
225
300
C
u
r
r
e
n
t
(
A
)
T
sc
I
sc
100 200 300 400 500 600 700 800 900
di
F
/dt (A/μs)
1000
1250
1500
1750
2000
2250
2500
Q
R
R
(
n
C
)
10
Ω
22
Ω
100
Ω
47
Ω
35A
70A
18A
P1-P3P4-P6P7-P9P10-P12

IRGP4650DPBF

Mfr. #:
Buy IRGP4650DPBF
Manufacturer:
Infineon Technologies
Description:
IGBT Transistors 600V UltraFast IGBT 50A 268W 104nC
Lifecycle:
New from this manufacturer.
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