IRGP4650DPBF

IRGP4650DPbF/IRGP4650D-EPbF
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7
Fig. 26. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)
Fig 25. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
1E-006 1E-005 0.0001 0.001 0.01 0.1
t
1
, Rectangular Pulse Duration (sec)
0.001
0.01
0.1
1
T
h
e
r
m
a
l
R
e
s
p
o
n
s
e
(
Z
t
h
J
C
)
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
τ
J
τ
J
τ
1
τ
1
τ
2
τ
2
τ
3
τ
3
R
1
R
1
R
2
R
2
R
3
R
3
Ci i/Ri
Ci= τi/Ri
τ
τ
C
τ
4
τ
4
R
4
R
4
Ri (°C/W) τi (sec)
0.01041 0.000006
0.15911
0.000142
0.23643 0.002035
0.15465
0.013806
1E-006 1E-005 0.0001 0.001 0.01 0.1
t
1
, Rectangular Pulse Duration (sec)
0.0001
0.001
0.01
0.1
1
10
T
h
e
r
m
a
l
R
e
s
p
o
n
s
e
(
Z
t
h
J
C
)
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
τ
J
τ
J
τ
1
τ
1
τ
2
τ
2
τ
3
τ
3
R
1
R
1
R
2
R
2
R
3
R
3
Ci i/Ri
Ci= τi/Ri
τ
τ
C
τ
4
τ
4
R
4
R
4
Ri (°C/W) τi (sec)
0.01716 0.000031
0.35875
0.000517
0.41334 0.004192
0.20121
0.024392
IRGP4650DPbF/IRGP4650D-EPbF
www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 17, 2014
8
Fig.C.T.1 - Gate Charge Circuit (turn-off)
Fig.C.T.2 - RBSOA Circuit
0
1K
VCCDUT
L
L
Rg
80 V
DUT
VCC
+
-
Fig.C.T.5 - Resistive Load Circuit
Rg
VCC
DUT
R =
VCC
ICM
G force
C sens
e
100K
DUT
0.0075μF
D1 22K
E force
C force
E sense
Fig.C.T.6 - BVCES Filter Circuit
Fig.C.T.3 - S.C. SOA Circuit
DC
4X
DUT
VCC
SCSOA
Fig.C.T.4 - Switching Loss Circuit
L
Rg
VCC
DUT /
DRIVER
diode clamp /
DUT
-5V
IRGP4650DPbF/IRGP4650D-EPbF
www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 17, 2014
9
Fig. WF3 - Typ. Diode Recovery Waveform
@ T
J
= 175°C using Fig. CT.4
Fig. WF4 - Typ. S.C. Waveform
@ T
J
= 25°C using Fig. CT.3
-100
0
100
200
300
400
500
600
6.4 6.6 6.8 7 7.2
time (μs)
V
CE
(V)
-10
0
10
20
30
40
50
60
I
CE
(A)
TEST
CURRENT
90% test
current
5% V
CE
10% test
current
tr
Eon
Loss
-100
0
100
200
300
400
500
600
-0.5 0 0.5 1 1.5 2
time(μs)
VCE (V)
-10
0
10
20
30
40
50
60
I
CE
(A)
90% I
CE
5% V
CE
5% I
CE
Eof f Lo s s
tf
Fig. WF1 - Typ. Turn-off Loss Waveform
@ T
J
= 175°C using Fig. CT.4
Fig. WF2 - Typ. Turn-on Loss Waveform
@ T
J
= 175°C using Fig. CT.4
-100
0
100
200
300
400
500
600
700
-4.5 0.5 5.5 10.5
Time (uS)
Vce (V)
-50
0
50
100
150
200
250
300
350
I
CE
(A)
VCE
ICE
-30
-20
-10
0
10
20
30
40
-0.3 -0.2 -0.1 0 0.1 0.2
time (μS)
V
F
(V)
Peak
I
RR
t
RR
Q
RR
10%
Pe ak
IRR

IRGP4650DPBF

Mfr. #:
Manufacturer:
Infineon Technologies
Description:
IGBT Transistors 600V UltraFast IGBT 50A 268W 104nC
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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