BT151S_SER_L_R_5 © NXP B.V. 2006. All rights reserved.
Product data sheet Rev. 05 — 9 October 2006 2 of 13
NXP Semiconductors
BT151S series L and R
Thyristors
3. Ordering information
4. Limiting values
[1] Although not recommended, off-state voltages up to 800 V may be applied without damage, but the thyristor may switch to the on-state.
The rate of rise of current should not exceed 15A/µs.
Table 2. Ordering information
Type number Package
Name Description Version
BT151S-500L DPAK plastic single-ended surface-mounted package; 3 leads (one lead cropped) SOT428
BT151S-500R
BT151S-650L
BT151S-650R
BT151S-800R
Table 3. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
DRM
repetitive peak off-state voltage BT151S-500L; BT151S-500R
[1]
- 500 V
BT151S-650L; BT151S-650R
[1]
- 650 V
BT151S-800R - 800 V
V
RRM
repetitive peak reverse voltage BT151S-500L; BT151S-500R
[1]
- 500 V
BT151S-650L; BT151S-650R
[1]
- 650 V
BT151S-800R - 800 V
I
T(AV)
average on-state current half sine wave; T
mb
≤ 103 °C;
see
Figure 1
- 7.5 A
I
T(RMS)
RMS on-state current all conduction angles; see Figure 4
and
5
-12 A
I
TSM
non-repetitive peak on-state
current
half sine wave; T
j
=25°C prior to
surge; see
Figure 2 and 3
t=10ms - 120 A
t = 8.3 ms - 132 A
I
2
tI
2
t for fusing t = 10 ms - 72 A
2
s
dI
T
/dt rate of rise of on-state current I
TM
= 20 A; I
G
=50mA;
dI
G
/dt = 50 mA/µs
-50 A/µs
I
GM
peak gate current - 2 A
V
RGM
peak reverse gate voltage - 5 V
P
GM
peak gate power - 5 W
P
G(AV)
average gate power over any 20 ms period - 0.5 W
T
stg
storage temperature −40 +150 °C
T
j
junction temperature - 125 °C
