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BT151S-800R,118

P1-P3P4-P6P7-P9P10-P12P13-P14
BT151S_SER_L_R_5 © NXP B.V. 2006. All rights reserved.
Product data sheet Rev. 05 — 9 October 2006 6 of 13
NXP Semiconductors
BT151S series L and R
Thyristors
6. Characteristics
Table 5. Characteristics
T
j
= 25
°
C unless otherwise stated.
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
I
GT
gate trigger current V
D
= 12 V; I
T
= 100 mA; see Figure 8
BT151S-500L - 2 5 mA
BT151S-500R - 2 15 mA
BT151S-650L - 2 5 mA
BT151S-650R - 2 15 mA
BT151S-800R - 2 15 mA
I
L
latching current V
D
= 12 V; I
GT
= 100 mA; see
Figure 10
- 1040mA
I
H
holding current V
D
= 12 V; I
GT
= 100 mA; see
Figure 11
- 7 20 mA
V
T
on-state voltage I
T
= 23 A; see Figure 9 - 1.4 1.75 V
V
GT
gate trigger voltage I
T
= 100 mA; V
D
= 12 V; see Figure 7 - 0.6 1.5 V
I
T
= 100 mA; V
D
=V
DRM(max)
;
T
j
= 125 °C
0.25 0.4 - V
I
D
off-state current V
D
=V
DRM(max)
; T
j
= 125 °C - 0.1 0.5 mA
I
R
reverse current V
R
=V
RRM(max)
; T
j
= 125 °C - 0.1 0.5 mA
Dynamic characteristics
dV
D
/dt rate of rise of off-state
voltage
V
DM
= 0.67 × V
DRM(max)
; T
j
= 125 °C;
exponential waveform; see
Figure 12
R
GK
= 100 Ω 200 1000 - V/µs
gate open circuit 50 130 - V/µs
t
gt
gate-controlled turn-on
time
I
TM
= 40 A; V
D
=V
DRM(max)
;
I
G
= 100 mA; dI
G
/dt = 5 A/µs
-2-µs
t
q
commutated turn-off
time
V
DM
= 0.67 × V
DRM(max)
; T
j
= 125 °C;
I
TM
= 20 A; V
R
=25V;
(dI
T
/dt)
M
=30A/µs; dV
D
/dt = 50 V/µs;
R
GK
= 100 Ω
-70-µs
BT151S_SER_L_R_5 © NXP B.V. 2006. All rights reserved.
Product data sheet Rev. 05 — 9 October 2006 7 of 13
NXP Semiconductors
BT151S series L and R
Thyristors
Fig 7. Normalized gate trigger voltage as a function of
junction temperature
Fig 8. Normalized gate trigger current as a function of
junction temperature
V
o
= 1.06 V
R
s
= 0.0304 Ω
(1) T
j
= 125 °C; typical values
(2) T
j
= 125 °C; maximum values
(3) T
j
=25°C; maximum values
Fig 9. On-state current as a function of on-state
voltage
Fig 10. Normalized latching current as a function of
junction temperature
T
j
(°C)
−50 150100050
001aaa953
0.8
1.2
1.6
0.4
V
GT
V
GT(25°C)
T
j
(°C)
−50 150100050
001aaa952
1
2
3
0
I
GT
I
GT(25°C)
V
T
(V)
021.50.5 1
001aaa959
10
20
30
I
T
(A)
0
(3)(2)(1)
T
j
(°C)
−50 150100050
001aaa951
1
2
3
0
I
L
I
L(25°C)
BT151S_SER_L_R_5 © NXP B.V. 2006. All rights reserved.
Product data sheet Rev. 05 — 9 October 2006 8 of 13
NXP Semiconductors
BT151S series L and R
Thyristors
(1) R
GK
= 100 Ω
(2) Gate open circuit
Fig 11. Normalized holding current as a function of
junction temperature
Fig 12. Critical rate of rise of off-state voltage as a
function of junction temperature; minimum
values
T
j
(°C)
−50 150100050
001aaa950
1
2
3
I
H
I
H(25°C)
0
001aaa949
10
3
10
2
10
4
dV
D
/dt
(V/µs)
10
T
j
(°C)
0 15010050
(2)
(1)
P1-P3P4-P6P7-P9P10-P12P13-P14

BT151S-800R,118

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Buy BT151S-800R,118
Manufacturer:
WeEn Semiconductors
Description:
SCRs TAPE13 SCR
Lifecycle:
New from this manufacturer.
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