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BT151S-800R,118

P1-P3P4-P6P7-P9P10-P12P13-P14
BT151S_SER_L_R_5 © NXP B.V. 2006. All rights reserved.
Product data sheet Rev. 05 — 9 October 2006 3 of 13
NXP Semiconductors
BT151S series L and R
Thyristors
Form factor a = I
T(RMS)
/I
T(AV)
Fig 1. Total power dissipation as a function of average on-state current; maximum values
f = 50 Hz
Fig 2. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values
I
T(AV) (A)
0 8642
001aab019
5
10
15
P
tot
(W)
0
116
107
98
T
mb(max)
(°C)
125
a =
1.57
4
2.8
2.2
1.9
conduction
angle
(degrees)
form
factor
a
30
60
90
120
180
4
2.8
2.2
1.9
1.57
α
001aaa957
80
40
120
160
I
TSM
(A)
0
n
1 10
3
10
2
10
t
p
T
j
initial = 25 °C max
I
T
I
TSM
t
BT151S_SER_L_R_5 © NXP B.V. 2006. All rights reserved.
Product data sheet Rev. 05 — 9 October 2006 4 of 13
NXP Semiconductors
BT151S series L and R
Thyristors
t
p
≤ 10 ms
Fig 3. Non-repetitive peak on-state current as a function of pulse width for sinusoidal currents; maximum values
f = 50 Hz; T
mb
≤ 103 °C
Fig 4. RMS on-state current as a function of surge
duration; maximum values
Fig 5. RMS on-state current as a function of mounting
base temperature; maximum values
001aaa956
t
p
(s)
10
−5
10
−2
10
−3
10
−4
10
2
10
3
I
TSM
(A)
10
dl
T
/dt limit
t
p
T
j
initial = 25 °C max
I
T
I
TSM
t
surge duration (s)
10
−2
10110
−1
001aaa954
10
15
5
20
25
I
T(RMS)
(A)
0
T
mb
(°C)
−50 150100050
001aaa998
8
4
12
16
I
T(RMS)
(A)
0
BT151S_SER_L_R_5 © NXP B.V. 2006. All rights reserved.
Product data sheet Rev. 05 — 9 October 2006 5 of 13
NXP Semiconductors
BT151S series L and R
Thyristors
5. Thermal characteristics
Table 4. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
R
th(j-mb)
thermal resistance from junction to
mounting base
see Figure 6 - - 1.8 K/W
R
th(j-a)
thermal resistance from junction to
ambient
mounted on an FR4
printed-circuit board; see
Figure 14
- 75 - K/W
Fig 6. Transient thermal impedance from junction to mounting base as a function of pulse width
001aaa963
10
−1
10
−2
1
10
Z
th(j-mb)
(K/W)
10
−3
t
p
(s)
10
−5
11010
−1
10
−2
10
−4
10
−3
t
p
t
p
T
P
t
T
δ =
P1-P3P4-P6P7-P9P10-P12P13-P14

BT151S-800R,118

Mfr. #:
Buy BT151S-800R,118
Manufacturer:
WeEn Semiconductors
Description:
SCRs TAPE13 SCR
Lifecycle:
New from this manufacturer.
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