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VND810
P1-P3
P4-P6
P7-P9
P10-P12
P13-P15
P16-P18
P19-P21
P22-P24
P25-P27
VND810
Application information
19/27
3.5
Maxim
um demagnetization ener
g
y (V
CC
= 13.5V)
Figure 26.
Maximum turn
-off current ver
sus load inductanc
e
Note:
V
alues are generat
ed with R
L
= 0
Ω.
In case of repetiti
v
e pulses,
T
jstart
(at beginning of ea
ch demagnetiza
tion) of e
v
er
y pulse
must not e
xceed the temperature specified abo
v
e f
or cur
ves B and C
.
V
IN
, I
L
t
Demagnetization
Demagnetization
Demagnetization
A = single pu
lse at T
Jstart
= 150ºC
B= repetitive pulse at T
Jstart
= 100ºC
C= repetitive p
ulse at T
Jstart
= 125ºC
1
10
0,
1
1
10
100
L(
m
H)
I
LM
A
X (
A
)
A
B
C
Obsolete Product(s) - Obsolete Product(s)
Package and PCB the
rmal data
VND810
20/27
4
P
ac
kage and PCB thermal data
4.1
SO-16 thermal data
Figure 27.
SO-16 PC board
Note:
Layout condition of R
th
and Z
th
measurem
ents (PCB FR
4 area = 5
8mm x 58mm,
PCB
thickness = 1.6mm, Cu thickness = 35µm,
Copper areas: 0.26
cm
2
, 4cm
2
).
Figure 28.
R
thj-amb
Vs PCB copper area in open bo
x free air condition
40
45
50
55
60
65
70
75
80
85
012
345
PC
B
C
u he
a
t
s
ink a
re
a
(
c
m
^
2)
RT
H j-a
m
b
(°
C
/
W)
Obsolete Product(s) - Obsolete Product(s)
VND810
Package and PCB therma
l data
21/27
Figure 29.
Thermal impedance
junction ambient s
ingle pulse
Equation 1
:
pulse calculation f
ormula
Figure 30.
Thermal fitting model of a quad ch
annel HSD in SO-16
0.
0
1
0.
1
1
10
100
1000
0.
0
001
0.
00
1
0.
0
1
0.
1
1
10
100
1000
Ti
m
e
(
s
)
ZT
H
(°
C
/
W)
0.26 cm
2
4 cm
2
Z
TH
δ
R
TH
δ
Z
THtp
1
δ
–
()
+
⋅
=
where
δ
t
p
T
⁄
=
T_amb
Pd1
C1
R4
C3
C4
R3
R1
R6
R5
R2
C5
C6
C2
Pd2
R2
C1
C2
R1
Tj_1
Tj_2
Obsolete Product(s) - Obsolete Product(s)
P1-P3
P4-P6
P7-P9
P10-P12
P13-P15
P16-P18
P19-P21
P22-P24
P25-P27
VND810
Mfr. #:
Buy VND810
Manufacturer:
STMicroelectronics
Description:
IC DRVR HISIDE 2CH 16-SOIC
Lifecycle:
New from this manufacturer.
Delivery:
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