VND810 Electrical specifications
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2.2 Thermal data
2.3 Electrical characteristics
Values specified in this section are for 8V < V
CC
< 36V; -40°C < T
j
< 150°C, unless
otherwise stated.
Figure 3. Current and voltage conventions
Note: V
Fn
= V
CCn
- V
OUTn
during reverse battery condition.
Table 4. Thermal data (per island)
Symbol Parameter Value Unit
R
thj-lead
Thermal resistance junction-lead 15 °C/W
R
thj-amb
Thermal resistance junction-ambient
(one chip ON)
77
(1)
1. When mounted on a standard single-sided FR-4 board with 0.5cm
2
of Cu (at least 35 µm thick) connected
to all V
CC
pins. Horizontal mounting and no artificial air flow.
57
(2)
2. When mounted on a standard single-sided FR-4 board with 4cm
2
of Cu (at least 35 µm thick) connected to
all V
CC
pins. Horizontal mounting and no artificial air flow.
°C/W
I
S
I
GND
OUTPUT 2
V
CC
GND
STATUS 2
INPUT 2
I
OUT2
I
IN2
I
STAT2
V
STAT2
V
IN2
V
CC
V
OUT2
OUTPUT 1
I
OUT1
V
OUT1
INPUT 1
I
IN1
STATUS 1
I
STAT1
V
IN1
V
STAT1
V
F1
(*)
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Electrical specifications VND810
8/27
Note: To ensure long term reliability under heavy overload or short circuit conditions, protection
and related diagnostic signals must be used together with a proper software strategy. If the
device is subjected to abnormal conditions, this software must limit the duration and number
of activation cycles.
Table 5. Power output
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
CC
Operating supply
voltage
5.5 13 36 V
V
USD
Undervoltage shutdown 3 4 5.5 V
V
OV
Overvoltage shutdown 36 V
R
ON
On-state resistance
I
OUT
= 1A; T
j
= 25°C
I
OUT
= 1A; V
CC
> 8V
160
320
m
m
I
S
Supply current
Off-state; V
CC
= 13V;
V
IN
= V
OUT
= 0V
Off-state; V
CC
= 13V;
V
IN
= V
OUT
= 0V;
T
j
= 25°C
On-state; V
CC
= 13V; V
IN
= 5V;
I
OUT
= 0A
12
12
5
40
25
7
µA
µA
mA
I
L(off1)
Off-state output current V
IN
= V
OUT
= 0V 0 50 µA
I
L(off2)
Off-state output current V
IN
= 0V; V
OUT
= 3.5V -75 0 µA
I
L(off3)
Off-state output current
V
IN
= V
OUT
= 0V; V
CC
= 13V;
T
j
= 125°C
A
I
L(off4)
Off-state output current
V
IN
= V
OUT
= 0V; V
CC
= 13V;
T
j
=25°C
A
Table 6. Protections
Symbol Parameter Test conditions Min. Typ. Max. Unit
T
TSD
Shutdown temperature 150 175 200 °C
T
R
Reset temperature 135 °C
T
hyst
Thermal hysteresis 7 15 °C
t
SDL
Status delay in overload
conditions
T
j
> T
TSD
20 µs
I
lim
Current limitation
V
CC
= 13V
5.5V < V
CC
< 36V
3.5 5 7.5
7.5
A
A
V
demag
Turn-off output clamp
voltage
I
OUT
= 1A; L = 6mH
V
CC
-
41
V
CC
-
48
V
CC
-
55
V
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VND810 Electrical specifications
9/27
Table 7. V
CC
- output diode
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
F
Forward on voltage - I
OUT
= 0.5A; T
j
= 150°C 0.6 V
Table 8. Switching (V
CC
= 13V; T
j
= 25°C)
Symbol Parameter Test conditions Min. Typ. Max. Unit
t
d(on)
Turn-on delay time
R
L
= 13 from V
IN
rising edge
to V
OUT
= 1.3V (see Figure 5)
30 µs
t
d(off)
Turn-off delay time
R
L
= 13from V
IN
falling edge
to V
OUT
= 11.7V
(see Figure 5)
30 µs
dV
OUT
/dt
(on)
Turn-on voltage slope
R
L
= 13 from V
OUT
= 1.3V to
V
OUT
= 10.4V (see Figure 5)
See
Figure 10
V/µs
dV
OUT
/dt
(off)
Turn-off voltage slope
R
L
= 13 from V
OUT
= 11.7V
to V
OUT
= 1.3V (see Figure 5)
See
Figure 12
V/µs
Table 9. Logic inputs
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
IL
Input low level 1.25 V
I
IL
Low level input current V
IN
= 1.25V 1 µA
V
IH
Input high level 3.25 V
I
IH
High level input current V
IN
= 3.25V 10 µA
V
I(hyst)
Input hysteresis voltage 0.5 V
V
ICL
Input clamp voltage
I
IN
= 1mA
I
IN
= -1mA
66.8
- 0.7
8V
V
Table 10. Status pin
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
STAT
Status low output voltage I
STAT
= 1.6mA 0.5 V
I
LSTAT
Status leakage current Normal operation; V
STAT
= 5V 10 µA
C
STAT
Status pin Input capacitance Normal operation; V
STAT
= 5V 100 pF
V
SCL
Status clamp voltage
I
STAT
= 1mA
I
STAT
= - 1mA
66.8
- 0.7
8V
V
Obsolete Product(s) - Obsolete Product(s)

VND810

Mfr. #:
Manufacturer:
STMicroelectronics
Description:
IC DRVR HISIDE 2CH 16-SOIC
Lifecycle:
New from this manufacturer.
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