July 2006 Rev 2 1/14
14
STGB6NC60H
N-channel 600V - 7A - D
2
PA K
Very fast PowerMESH™ IGBT
General features
Low on voltage drop (V
cesat
)
Low C
RES
/ C
IES
ratio (no cross-conduction
susceptibility)
Very soft ultra fast recovery antiparallel diode
High frequency operation
Description
Using the latest high voltage technology based on
a patented strip layout, STMicroelectronics has
designed an advaced family of IGBTs, the
PowerMESH™ IGBTs, with outstanding
performances. The suffix “H” identifies a family
optimized for high frequency application in order
to achieve very high switching performances
(reduced tfall) mantaining a low voltage drop.
Applications
High frequency inverters
SMPS and PFC in both hard switch and
resonant topologies
Motor drivers
Internal schematic diagram
Type V
CES
V
CE(sat)
max
@25°C
I
C
@100°C
STGB6NC60H 600V <2.5V 7A
D
²
PAK
1
3
www.st.com
Order codes
Part number Marking Package Packaging
STGB6NC60HT4 GB6NC60H D²PAK Tape & reel
Obsolete Product(s) - Obsolete Product(s)
Obsolete Product(s) - Obsolete Product(s)
Contents STGB6NC60H
2/14
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Obsolete Product(s) - Obsolete Product(s)
STGB6NC60H Electrical ratings
3/14
1 Electrical ratings
Table 1. Absolute maximum ratings
Symbol Parameter Value Unit
V
CES
Collector-emitter voltage (V
GS
= 0)
600 V
I
C
(1)
1. Calculated according to the iterative formula::
Collector current (continuous) at T
C
= 25°C
15 A
I
C
(1)
Collector current (continuous) at T
C
= 100°C
7A
I
CM
(2)
2. Pulse width limited by max junction temperature
Collector current (pulsed) 21 A
V
GE
Gate-emitter voltage ±20 V
P
TOT
Total dissipation at T
C
= 25°C
56 W
T
stg
Storage temperature – 55 to 150
°C
T
j
Operating junction temperature
T
l
Maximum lead temperature for soldering purpose
(for 10sec. 1.6 mm from case)
300 °C
Table 2. Thermal resistance
Symbol Parameter Value Unit
Rthj-case Thermal resistance junction-case max 2 °C/W
Rthj-amb Thermal resistance junction-ambient max 62.5 °C/W
I
C
T
C
()
T
JMAX
T
C
R
THJ C
V
CESAT MAX()
T
C
I
C
,()×
------------------------------------------------------------------------------------------------------=

STGB6NC60HT4

Mfr. #:
Manufacturer:
STMicroelectronics
Description:
IGBT Transistors PowerMESH TM IGBT
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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