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STGB6NC60HT4
P1-P3
P4-P6
P7-P9
P10-P12
P13-P14
Obsolete Product(s) - Obsolete Product(s)
STGB6NC60H
Elect
rical characteristics
7/14
Figure 7.
Normalized gate threshold v
oltage
vs temperature
Figure 8.
Collector-emi
t
ter
on volta
ge vs
collector c
urrent
Figure 9.
Normalized breakdow
n v
oltage vs
temperatur
e
Figure 10.
Switch
ing losses
vs temperature
Figure 11.
Switching
los
ses vs gate resistance
Figure 12.
Switchin
g
losse
s vs collector
current
Obsolete Product(s) - Obsolete Product(s)
Electrical ch
aracteristics
STGB6NC60H
8/14
Figure 13.
Thermal impedance
Figure 14.
T
urn-off SO
A
Obsolete Product(s) - Obsolete Product(s)
STGB6NC60H
Test circuit
9/14
3
T
est cir
cuit
Figure 15.
T
est circuit for inductive load
switching
Figure 16.
Gate char
ge test circuit
Figure 17.
Switching wa
veform
Figure
18.
Diode reco
very time wavef
orm
P1-P3
P4-P6
P7-P9
P10-P12
P13-P14
STGB6NC60HT4
Mfr. #:
Buy STGB6NC60HT4
Manufacturer:
STMicroelectronics
Description:
IGBT Transistors PowerMESH TM IGBT
Lifecycle:
New from this manufacturer.
Delivery:
DHL
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Payment:
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STGB6NC60HT4
