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Electrical characteristics STGB6NC60H
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2 Electrical characteristics
(T
CASE
=25°C unless otherwise specified)
Table 3. Static
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
BR(CES)
Collector-emitter
breakdown voltage
I
C
= 1mA, V
GE
= 0
600 V
V
CE(sat)
Collector-emitter saturation
voltage
V
GE
= 15V, I
C
= 3A
V
GE
= 15V, I
C
= 3A, Tc= 125°C
1.9
1.7
2.5 V
V
V
GE(th)
Gate threshold voltage
V
CE
= V
GE
, I
C
= 250 µA
3.75 5.75 V
I
CES
Collector cut-off current
(V
GE
= 0)
V
CE
= Max rating,T
C
= 25°C
V
CE
= Max rating,T
C
= 125°C
10
1
µA
mA
I
GES
Gate-emitter leakage
current (V
CE
= 0)
V
GE
= ±20V , V
CE
= 0
±100 nA
g
fs
Forward transconductance
V
CE
= 15V
,
I
C
= 3A
3S
Table 4. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
C
ies
C
oes
C
res
Input capacitance
Output capacitance
Reverse transfer
capacitance
V
CE
= 25V, f = 1MHz,
V
GE
= 0
205
32
5.5
pF
pF
pF
Q
g
Q
ge
Q
gc
Total gate charge
Gate-emitter charge
Gate-collector charge
V
CE
= 390V, I
C
= 3A,
V
GE
= 15V,
(see Figure 16)
13.6
3.4
5.1
nC
nC
nC
I
CL
Turn-off SOA minimum
current
V
clamp
= 390V, Tj = 150°C,
R
G
= 10, V
GE
= 15V
19 A
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Table 5. Switching on/off (inductive load)
Symbol Parameter Test conditions Min. Typ. Max. Unit
t
d(on)
t
r
(di/dt)
on
Turn-on delay time
Current rise time
Turn-on current slope
V
CC
= 390V, I
C
= 3A
R
G
= 10, V
GE
= 15V,
Tj = 25°C (see Figure 17)
12
5
612
ns
ns
A/µs
t
d(on)
t
r
(di/dt)
on
Turn-on delay time
Current rise time
Turn-on current slope
V
CC
= 390V, I
C
= 3A
R
G
= 10, V
GE
= 15V,
Tj =125°C (see Figure 17)
13
4.3
560
ns
ns
A/µs
t
r
(V
off
)
t
d
(
off
)
t
f
Off voltage rise time
Turn-off delay time
Current fall time
V
CC
= 390V, I
C
= 3A,
R
GE
= 10 , V
GE
= 15V,
T
J
= 25°C (see Figure 17)
40
76
100
ns
ns
ns
t
r
(V
off
)
t
d
(
off
)
t
f
Off voltage rise time
Turn-off delay time
Current fall time
V
CC
= 390V, I
C
= 3A,
R
GE
= 10 , V
GE
=15V,
Tj = 125°C (see Figure 17)
60
98
124
ns
ns
ns
Table 6. Switching energy (inductive load)
Symbol Parameter Test condictions Min. Typ. Max. Unit
E
on
(1)
E
off
(2)
E
ts
1. Eon is the tun-on losses when a typical diode is used in the test circuit in figure 17. If the IGBT is offered in
a package with a co-pak diode, the co-pack diode is used as external diode. IGBTs & Diode are at the
same temperature (25°C and 125°C)
2. Turn-off losses include also the tail of the collector current
Turn-on switching losses
Turn-off switching losses
Total switching losses
V
CC
= 390V, I
C
= 3A
R
G
=10, V
GE
=15V,
Tj =25°C (see Figure 17)
20
68
88
µJ
µJ
µJ
E
on
(1)
E
off
(2)
E
ts
Turn-on switching losses
Turn-off switching losses
Total switching losses
V
CC
= 390V, I
C
= 3A
R
G
=10, V
GE
= 15V,
Tj = 125°C (see Figure 17)
37
93
130
µJ
µJ
µJ
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Electrical characteristics STGB6NC60H
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2.1 Electrical characteristics (curves)
Figure 1. Output characterisics Figure 2. Transfer characteristics
Figure 3. Transconductance Figure 4. Collector-emitter on voltage vs
temperature
Figure 5. Gate charge vs gate-source voltage Figure 6. Capacitance variations

STGB6NC60HT4

Mfr. #:
Manufacturer:
STMicroelectronics
Description:
IGBT Transistors PowerMESH TM IGBT
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