4 W, GaAs, pHEMT, MMIC
Power Amplifier, 5.5 GHz to 8.5 GHz
Data Sheet
HMC1121
Rev. 0 Document Feedback
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FEATURES
High saturated output power (P
SAT
): 36.5 dBm at 30% power
added efficiency (PAE)
High output third-order intercept (IP3): 44 dBm typical
High gain: 28 dB typical
High output power for 1 dB compression (P1dB): 36 dBm typical
Total supply current: 2200 mA at 7 V
40-lead, 6 mm × 6 mm LFCSP package: 36 mm
2
APPLICATIONS
Point to point radios
Point to multipoint radios
Very small aperture terminals (VSATs) and satellite
communications (SATCOMs)
Military electronic warfare (EW) and electronic counter
measures (ECM)
FUNCTIONAL BLOCK DIAGRAM
PACKAGE
BASE
22
2
1
4
5
3
12
11
NIC
NIC
NIC
NIC
RFIN
6
7
NIC
NIC
8
NIC
9
10
NIC
NIC
NIC
NIC21
23
V
REF
24
V
DET
25
NIC
26
RFOUT
27
NIC
28
NIC
29
NIC
30
NIC
NIC
NIC
15
V
DD3
14
V
GG3
13
NIC
16
NIC
17
V
GG4
18
NIC
19
20
V
DD4
NIC
32
31
V
DD2
NIC
33
NIC
34
V
GG
35
NIC
36
V
DD1
37
V
GG1
38
NIC
39
40
NIC
NIC
HMC1121
13529-001
Figure 1.
GENERAL DESCRIPTION
The HMC1121 is a three-stage, gallium arsenide (GaAs),
pseudomorphic high electron mobility transfer (pHEMT),
monolithic microwave integrated circuit (MMIC), 4 W power
amplifier with an integrated temperature compensated on-chip
power detector that operates between 5.5 GHz and 8.5 GHz.
The HMC1121 provides 28 dB of gain, 44 dBm output IP3, and
36.5 dBm of saturated output power at 30% PAE from a 7 V
power supply.
The HMC1121 exhibits excellent linearity and it is optimized
for high capacity, point to point and point to multipoint radio
systems. The amplifier configuration and high gain make it an
excellent candidate for last stage signal amplification preceding
the antenna.
Ideal for supporting higher volume applications, the HMC1121
is provided in a 40-lead LFCSP package.
