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HMC1121LP6GETR

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16
Data Sheet HMC1121
Rev. 0 | Page 3 of 15
SPECIFICATIONS
ELECTRICAL SPECIFICATIONS
T
A
= 25°C, V
DD
= V
DD1
= V
DD2
= V
DD3
= V
DD4
= 7 V, I
DD
= 2200 mA, frequency range = 5.5 GHz to 7.5 GHz.
Table 1.
Parameter Symbol Min Typ Max Unit Test Conditions/Comments
FREQUENCY RANGE 5.5 7.5 GHz
GAIN 24 27 dB
Gain Variation over Temperature 0.01 dB/°C
RETURN LOSS
Input 17 dB
Output 13 dB
OUTPUT POWER
For 1 dB Compression P1dB 35 36 dBm 36 dBm = 4 W
Saturated P
SAT
36.5 dBm At 30% PAE
OUTPUT THIRD-ORDER INTERCEPT IP3 44 dBm Measurement taken at P
OUT
/tone = 28 dBm
SUPPLY
Voltage V
DD
5 7.5 V
Total Current I
DD
2200 mA
Adjust the gate control voltage (V
GG1
to V
GG4
) between
−2 V to 0 V to achieve an I
DD
= 2200 mA typical
T
A
= 25°C, V
DD
= V
DD1
= V
DD2
= V
DD3
= V
DD4
= 7 V, I
DD
= 2200 mA, frequency range = 7.5 GHz to 8.5 GHz.
Table 2.
Parameter Symbol Min Typ Max Unit Test Conditions/Comments
FREQUENCY RANGE 7.5 8.5 GHz
GAIN 25 28 dB
Gain Variation over Temperature 0.009 dB/°C
RETURN LOSS
Input 15 dB
Output 13 dB
OUTPUT POWER
For 1 dB Compression P1dB 35 36 dBm 36 dBm = 4 W
Saturated P
SAT
36.5 dBm At 30% PAE
OUTPUT THIRD-ORDER INTERCEPT IP3 43 dBm Measurement taken at P
OUT
/tone = 28 dBm
SUPPLY
Voltage V
DD
5 7.5 V
Total Current I
DD
2200 mA
Adjust the gate control voltage (V
GG1
to V
GG4
) between
−2 V to 0 V to achieve an I
DD
= 2200 mA typical
HMC1121 Data Sheet
Rev. 0 | Page 4 of 15
ABSOLUTE MAXIMUM RATINGS
Table 3.
Parameter Rating
Drain Voltage Bias 8 V
RF Input Power (RFIN)
1
24 dBm
Channel Temperature 175°C
Continuous Power Dissipation, P
DISS
(T
A
= 85°C,
Derate 227 mW/°C Above 85°C)
20.5 W
Thermal Resistance (R
TH
) Junction to Ground
Paddle
4.4°C/W
Maximum Peak Reflow Temperature (MSL3)
2
260°C
Storage Temperature Range −65°C to +150°C
Operating Temperature Range −40°C to +85°C
ESD Sensitivity (Human Body Model)
Class 1A,
passed 250 V
1
The maximum input power (P
IN
) is limited to 24 dBm or to the thermal limits
constrained by the maximum power dissipation.
2
See the Ordering Guide section.
Stresses at or above those listed under Absolute Maximum
Ratings may cause permanent damage to the product. This is a
stress rating only; functional operation of the product at these
or any other conditions above those indicated in the operational
section of this specification is not implied. Operation beyond
the maximum operating conditions for extended periods may
affect product reliability.
ESD CAUTION
Data Sheet HMC1121
Rev. 0 | Page 5 of 15
PIN CONFIGURATION AND FUNCTION DESCRIPTIONS
22
2
1
4
5
3
12
11
NIC
NIC
NIC
NIC
RFIN
6
7
NIC
NIC
8NIC
9
10
NIC
NIC
NIC
NIC21
23
V
REF
24
V
DET
25 NIC
26
RFOUT
27
NIC
28 NIC
29 NIC
30
NIC
NIC
NIC
15
V
DD3
14
V
GG3
13NIC
16NIC
17
V
GG4
18NIC
19
20
V
DD4
NIC
32
31
V
DD2
NIC
33 NIC
34
V
GG
2
35 NIC
36
V
DD1
37
V
GG1
38 NIC
39
40
NIC
NIC
HMC1121
TOP VIEW
(Not to Scale)
NOTES
1. NIC = NO INTERNAL CONNECTION.
2. EXPOSED PAD. EXPOSED PAD MUST BE
CONNECTED TO THE RF/DC GROUND.
13529-002
Figure 2. Pin Configuration
Table 4. Pin Function Descriptions
Pin No. Mnemonic Description
1 to 4, 6 to 13, 16, 18, 20
to 22, 25, 27 to 31, 33, 35,
38 to 40
NC
No Internal Connection. These pins and exposed ground pad must be connected to RF/dc
ground.
5 RFIN
RF Input. This pin is ac-coupled and matched to 50 Ω. See Figure 3 for the RFIN interface
schematic.
14, 17, 34, 37
V
GG3
, V
GG4
,
V
GG2
, V
GG1
Gate Controls for the Amplifier. Adjust V
GG1
through V
GG4
to achieve the recommended bias
current. External bypass capacitors of 100 pF, 10 nF, and 4.7 μF are required. See Figure 5 for the
V
GG1
to V
GG4
interface schematic.
15, 19, 32, 36
V
DD3
, V
DD4
,
V
DD2
, V
DD1
Drain Biases for the Amplifier. External bypass capacitors of 100 pF, 10 nF, and 4.7 μF are required.
See Figure 8 for the V
DD1
to V
DD4
interface schematic.
23 V
REF
Voltage Reference. This pin is the dc bias of the diode biased through the external resistor and is
used for the temperature compensation of V
DET
. See Figure 7 for the V
REF
interface schematic.
24 V
DET
Voltage Detection. This pin is the dc voltage representing the RF output power rectified by the
diode that is biased through an external resistor. See Figure 4 for the V
DET
interface schematic.
26 RFOUT
RF Output. This pin is ac-coupled and matched to 50 Ω. See Figure 6 for the RFOUT interface
schematic.
EPAD Exposed Pad. The exposed pad must be connected to RF/dc ground.
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16

HMC1121LP6GETR

Mfr. #:
Buy HMC1121LP6GETR
Manufacturer:
Analog Devices Inc.
Description:
RF Amplifier Amplifier Power 5.5-8.5GHz 5W
Lifecycle:
New from this manufacturer.
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