Data Sheet HMC1121
Rev. 0 | Page 9 of 15
48
36
38
42
46
40
44
56789
IP3 (dBm)
FREQUENCY (GHz)
6V
7V
13529-021
Figure 21. Output IP3 vs. Frequency at Various Supply Voltages,
P
OUT
/Tone = 28 dBm
60
50
40
30
20
10
0
16 18 20 22 24 26 28 30 32 34
IM3 (dBc)
P
OUT
/TONE (dBm)
5.5GHz
6.5GHz
7.5GHz
8.5GHz
13529-022
Figure 22. Output Third-Order Intermodulation (IM3) vs. P
OUT
/Tone at V
DD
= 7 V
40
0
10
5
15
25
35
20
30
–14 –10 –6 2–2 10614
P
OUT
(dBm), GAIN (dB), PAE (%)
INPUT POWER (dBm)
3000
2900
2800
2700
2600
2500
2400
2300
2200
2100
2000
I
DD
(mA)
P
OUT
GAIN
PAE
I
DD
13529-023
Figure 23. P
OUT
, Gain, PAE, and I
DD
vs. Input Power at 7 GHz
60
50
40
30
20
10
0
16 18 20 22 24 26 28 30 32 34
IM3 (dBc)
P
OUT
/TONE (dBm)
5.5GHz
6.5GHz
7.5GHz
8.5GHz
13529-024
Figure 24. Output IM3 vs. P
OUT
/Tone at V
DD
= 6 V
60
50
40
30
20
10
0
16 18 20 22 24 26 28 30 32 34
IM3 (dBc)
P
OUT
/TONE (dBm)
5.5GHz
6.5GHz
7.5GHz
8.5GHz
13529-025
Figure 25. Output IM3 vs. P
OUT
/Tone at V
DD
= 8 V
40
35
30
25
20
1800 2000 2200 2400
GAIN (dB), P1dB (dBm), P
SAT
(dBm)
I
DD
(mA)
GAIN
P1dB
P
SAT
13529-026
Figure 26. Gain, P1dB, and P
SAT
vs. Supply Current (I
DD
) at 7 GHz
HMC1121 Data Sheet
Rev. 0 | Page 10 of 15
40
35
30
25
20
6.0 6.5 7.0 7.5 8.0
GAIN (dB), P1dB (dBm), P
SAT
(dBm)
V
DD
(V)
GAIN
P1dB
P
SAT
13529-027
Figure 27. Gain, P1dB, and P
SAT
vs. Supply Voltage (V
DD
) at 7 GHz
20
18
16
14
12
10
–14 –10 –8 –6 –4 0 4 6 82–12 –2 10 12
POWER DISSIPATION (W)
INPUT POWER (dBm)
5.5GHz
6.5GHz
7.5GHz
8.5GHz
13529-028
Figure 28. Power Dissipation vs. Input Power at T
A
= 85°C
0
–90
–70
–50
–30
–10
–80
–60
–40
–20
REVERSE ISOLATION (dB)
56789
FREQUENCY (GHz)
+85°C
+25°C
–40°C
13529-029
Figure 29. Reverse Isolation vs. Frequency at Various Temperatures
10
1
0.1
0.01
0.001
–10 0 10 20 30 40
V
REF
V
DET
(V)
OUTPUT POWER (dBm)
5.5GHz
7.0GHz
8.5GHz
13529-030
Figure 30. Detector Voltage (V
REF
− V
DET
) vs. Output Power at
Various Frequencies
10
1
0.1
0.01
0.001
–10 0 10 20 30 40
V
REF
V
DET
(V)
OUTPUT POWER (dBm)
+85°C
+25°C
–40°C
13529-031
Figure 31. Detector Voltage (V
REF
− V
DET
) vs. Output Power at Various
Temperatures, at 7 GHz
Data Sheet HMC1121
Rev. 0 | Page 11 of 15
THEORY OF OPERATION
The HMC1121 is a three-stage, gallium arsenide (GaAs),
pseudomorphic high electron mobility transfer (pHEMT),
monolithic microwave integrated circuit (MMIC), 4 W power
amplifier consisting of three gain stages in series. A simplified
block diagram is shown in Figure 32. The input signal is divided
evenly into two; each of these two paths are amplified through
three independent gain stages. The amplified signals are then
combined at the output.
13529-032
GG1
,
V
GG2
RFIN
V
DD2
V
DD1
RFOU
T
V
GG3
, V
GG4
V
DD4
V
DD3
Figure 32. Simplified Block Diagram
The HMC1121 has single-ended input and output ports whose
impedances are nominally matched to 50 Ω internally over the
5.5 GHz to 8.5 GHz frequency range. Consequently, it can directly
insert into a 50 Ω system without the need for impedance
matching circuitry. In addition, multiple HMC1121 amplifiers
can be cascaded back to back without the need of external
matching circuitry. Similarly, multiple HMC1121 amplifiers
can be used with power dividers at the input and power
combiners at the output to obtain higher output power levels.
The input and output impedances are sufficiently stable vs.
variations in temperature and supply voltage that no impedance
matching compensation is required.
It is critical to supply very low inductance ground connections
to the ground pins as well as to the backside exposed pad to
ensure stable operation.
To ensure the best performance out of the HMC1121, do not
exceed the absolute maximum ratings.

HMC1121LP6GETR

Mfr. #:
Manufacturer:
Analog Devices Inc.
Description:
RF Amplifier Amplifier Power 5.5-8.5GHz 5W
Lifecycle:
New from this manufacturer.
Delivery:
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