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PBLS4004D,115

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16
PBLS4004D_3 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 03 — 6 January 2009 9 of 15
NXP Semiconductors
PBLS4004D
40 V PNP BISS loadswitch
I
C
/I
B
=20
(1) T
amb
= 100 °C
(2) T
amb
=25°C
(3) T
amb
= −55 °C
T
amb
=25°C
(1) I
C
/I
B
= 100
(2) I
C
/I
B
=50
(3) I
C
/I
B
=10
Fig 9. TR1 (PNP): Collector-emitter saturation
voltage as a function of collector current;
typical values
Fig 10. TR1 (PNP): Collector-emitter saturation
voltage as a function of collector current;
typical values
I
C
/I
B
=20
(1) T
amb
= 100 °C
(2) T
amb
=25°C
(3) T
amb
= −55 °C
T
amb
=25°C
(1) I
C
/I
B
= 100
(2) I
C
/I
B
=50
(3) I
C
/I
B
=10
Fig 11. TR1 (PNP): Collector-emitter saturation
resistance as a function of collector current;
typical values
Fig 12. TR1 (PNP): Collector-emitter saturation
resistance as a function of collector current;
typical values
006aaa466
I
C
(mA)
−10
−1
−10
4
−10
3
−1 −10
2
−10
−10
−1
−1
V
CEsat
(V)
−10
−2
(3)
(1)
(2)
006aaa471
I
C
(mA)
−10
−1
−10
4
−10
3
−1 −10
2
−10
−10
−2
−10
−1
−1
−10
V
CEsat
(V)
−10
−3
(3)
(2)
(1)
006aaa470
I
C
(mA)
−10
−1
−10
4
−10
3
−1 −10
2
−10
1
10
10
2
10
3
R
CEsat
(Ω)
10
−1
(3)
(1)
(2)
006aaa472
I
C
(mA)
−10
−1
−10
4
−10
3
−1 −10
2
−10
1
10
10
2
10
3
R
CEsat
(Ω)
10
−1
(3)
(2)
(1)
PBLS4004D_3 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 03 — 6 January 2009 10 of 15
NXP Semiconductors
PBLS4004D
40 V PNP BISS loadswitch
V
CE
=5V
(1) T
amb
= 150 °C
(2) T
amb
=25°C
(3) T
amb
= −40 °C
I
C
/I
B
=20
(1) T
amb
= 100 °C
(2) T
amb
=25°C
(3) T
amb
= −40 °C
Fig 13. TR2 (NPN): DC current gain as a function of
collector current; typical values
Fig 14. TR2 (NPN): Collector-emitter saturation
voltage as a function of collector current;
typical values
V
CE
= 0.3 V
(1) T
amb
= −40 °C
(2) T
amb
=25°C
(3) T
amb
= 100 °C
V
CE
=5V
(1) T
amb
= −40 °C
(2) T
amb
=25°C
(3) T
amb
= 100 °C
Fig 15. TR2 (NPN): On-state input voltage as a
function of collector current; typical values
Fig 16. TR2 (NPN): Off-state input voltage as a
function of collector current; typical values
I
C
(mA)
10
−1
10
2
101
006aaa038
10
2
10
10
3
h
FE
1
(1)
(2)
(3)
006aaa039
I
C
(mA)
110
2
10
10
−1
V
CEsat
(V)
10
−2
(1)
(2)
(3)
006aaa040
I
C
(mA)
10
−1
10
2
101
1
10
V
I(on)
(V)
10
−1
(1)
(2)
(3)
006aaa041
I
C
(mA)
10
−2
10
1
110
−1
1
10
V
I(off)
(V)
10
−1
(1)
(3)
(2)
PBLS4004D_3 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 03 — 6 January 2009 11 of 15
NXP Semiconductors
PBLS4004D
40 V PNP BISS loadswitch
8. Package outline
9. Packing information
[1] For further information and the availability of packing methods, see Section 13.
[2] T1: normal taping
[3] T2: reverse taping
Fig 17. Package outline SOT457 (SC-74)
04-11-08Dimensions in mm
3.0
2.5
1.7
1.3
3.1
2.7
pin 1 index
1.9
0.26
0.10
0.40
0.25
0.95
1.1
0.9
0.6
0.2
132
4
56
Table 8. Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.
[1]
Type number Package Description Packing quantity
3000 10000
PBLS4004D SOT457 4 mm pitch, 8 mm tape and reel; T1
[2]
-115 -135
4 mm pitch, 8 mm tape and reel; T2
[3]
-125 -165
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PBLS4004D,115

Mfr. #:
Buy PBLS4004D,115
Manufacturer:
Nexperia
Description:
Bipolar Transistors - Pre-Biased BISS LDSWITCH TAPE-7
Lifecycle:
New from this manufacturer.
Delivery:
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