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PBLS4004D,115

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16
PBLS4004D_3 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 03 — 6 January 2009 6 of 15
NXP Semiconductors
PBLS4004D
40 V PNP BISS loadswitch
7. Characteristics
Ceramic PCB, Al
2
O
3
, standard footprint
Fig 4. TR1 (PNP): Transient thermal impedance from junction to ambient as a function of pulse duration; typical
values
006aaa464
10
1
10
2
10
3
Z
th(j-a)
(K/W)
10
−5
1010
−2
10
−4
10
2
10
−1
t
p
(s)
10
−3
10
3
1
0.75
0.5
0.33
0.2
0.1
δ = 1
0.05
0.02
0.01
0
Table 7. Characteristics
T
amb
=25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
TR1; PNP low V
CEsat
transistor
I
CBO
collector-base cut-off
current
V
CB
= −40 V; I
E
=0A - - −0.1 µA
V
CB
= −40 V; I
E
=0A;
T
j
= 150 °C
-- −50 µA
I
CES
collector-emitter
cut-off current
V
CE
= −30 V; V
BE
=0V - - −0.1 µA
I
EBO
emitter-base cut-off
current
V
EB
= −5 V; I
C
=0A - - −0.1 µA
h
FE
DC current gain V
CE
= −5 V; I
C
= −1 mA 300 - -
V
CE
= −5 V; I
C
= −100 mA
[1]
300 - 800
V
CE
= −5 V; I
C
= −500 mA
[1]
215 - -
V
CE
= −5 V; I
C
= −1A
[1]
150 - -
V
CEsat
collector-emitter
saturation voltage
I
C
= −100 mA; I
B
= −1mA - −80 −140 mV
I
C
= −500 mA; I
B
= −50 mA
[1]
- −120 −170 mV
I
C
= −1 A; I
B
= −100 mA
[1]
- −220 −310 mV
R
CEsat
collector-emitter
saturation resistance
I
C
= −500 mA; I
B
= −50 mA
[1]
- 240 340 mΩ
V
BEsat
base-emitter
saturation voltage
I
C
= −1 A; I
B
= −50 mA
[1]
-- −1.1 V
V
BEon
base-emitter
turn-on voltage
V
CE
= −5 V; I
C
= −1A
[1]
-- −1V
PBLS4004D_3 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 03 — 6 January 2009 7 of 15
NXP Semiconductors
PBLS4004D
40 V PNP BISS loadswitch
[1] Pulse test: t
p
≤ 300 µs; δ≤0.02.
f
T
transition frequency I
C
= −50 mA; V
CE
= −10 V;
f = 100 MHz
150 - - MHz
C
c
collector capacitance V
CB
= −10 V; I
E
=i
e
=0A;
f=1MHz
- - 12 pF
TR2; NPN resistor-equipped transistor
I
CBO
collector-base cut-off
current
V
CB
=50V; I
E
= 0 A - - 100 nA
I
CEO
collector-emitter
cut-off current
V
CE
=30V; I
B
=0A - - 1 µA
V
CE
=30V; I
B
=0A;
T
j
= 150 °C
-- 50µA
I
EBO
emitter-base cut-off
current
V
EB
=5V; I
C
= 0 A - - 180 µA
h
FE
DC current gain V
CE
=5V; I
C
= 5 mA 60 - -
V
CEsat
collector-emitter
saturation voltage
I
C
= 10 mA; I
B
= 0.5 mA - - 150 mV
V
I(off)
off-state input voltage V
CE
=5V; I
C
= 100 µA - 1.1 0.8 V
V
I(on)
on-state input voltage V
CE
= 0.3 V; I
C
= 5 mA 2.5 1.7 - V
R1 bias resistor 1 (input) 15.4 22 28.6 kΩ
R2/R1 bias resistor ratio 0.8 1 1.2
C
c
collector capacitance V
CB
=10V; I
E
=i
e
=0A;
f=1MHz
- - 2.5 pF
Table 7. Characteristics
…continued
T
amb
=25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
PBLS4004D_3 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 03 — 6 January 2009 8 of 15
NXP Semiconductors
PBLS4004D
40 V PNP BISS loadswitch
V
CE
= −5V
(1) T
amb
= 100 °C
(2) T
amb
=25°C
(3) T
amb
= −55 °C
T
amb
=25°C
Fig 5. TR1 (PNP): DC current gain as a function of
collector current; typical values
Fig 6. TR1 (PNP): Collector current as a function of
collector-emitter voltage; typical values
V
CE
= −5V
(1) T
amb
= −55 °C
(2) T
amb
=25°C
(3) T
amb
= 100 °C
I
C
/I
B
=20
(1) T
amb
= −55 °C
(2) T
amb
=25°C
(3) T
amb
= 100 °C
Fig 7. TR1 (PNP): Base-emitter voltage as a function
of collector current; typical values
Fig 8. TR1 (PNP): Base-emitter saturation voltage as
a function of collector current; typical values
006aaa465
400
800
1200
h
FE
0
I
C
(mA)
−10
−1
−10
4
−10
3
−1 −10
2
−10
(2)
(3)
(1)
006aaa469
−0.8
−1.6
−2.4
I
C
(A)
0
V
CE
(V)
0 −5−4−2 −3−1
I
B
(mA) = −24
−2.4
−4.8
−7.2
−12
−14.4
−9.6
−16.8
−19.2
−21.6
006aaa467
−0.6
−0.4
−0.8
−1.0
V
BE
(V)
−0.2
I
C
(mA)
−10
−1
−10
4
−10
3
−1 −10
2
−10
(3)
(1)
(2)
006aaa468
−0.5
−0.9
−1.3
V
BEsat
(V)
−0.1
I
C
(mA)
−10
−1
−10
4
−10
3
−1 −10
2
−10
(2)
(3)
(1)
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16

PBLS4004D,115

Mfr. #:
Buy PBLS4004D,115
Manufacturer:
Nexperia
Description:
Bipolar Transistors - Pre-Biased BISS LDSWITCH TAPE-7
Lifecycle:
New from this manufacturer.
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