Philips Semiconductors
Si9410DY
N-channel TrenchMOS ™ logic level FET
Product data Rev. 03 — 23 January 2004 2 of 12
9397 750 12542
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
5. Quick reference data
6. Ordering information
7. Limiting values
Table 2: Quick reference data
Symbol Parameter Conditions Typ Max Unit
V
DS
drain-source voltage (DC) 25 °C ≤ T
j
≤ 150 °C - 30 V
I
D
drain current (DC) T
amb
=25°C; pulsed; t
p
≤ 10 s - 7 A
P
tot
total power dissipation T
amb
=25°C; pulsed; t
p
≤ 10 s - 2.5 W
T
j
junction temperature - 150 °C
R
DSon
drain-source on-state resistance V
GS
= 10 V; I
D
=7A 1930mΩ
V
GS
=5V; I
D
= 4 A 23 40 mΩ
V
GS
= 4.5 V; I
D
=3.5A 2550mΩ
Table 3: Ordering information
Type number Package
Name Description Version
Si9410DY SO8 Plastic small outline package; 8 leads SOT96-1
Table 4: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
DS
drain-source voltage (DC) 25 °C ≤ T
j
≤ 150 °C - 30 V
V
GS
gate-source voltage (DC) - ±20 V
I
D
drain current (DC) T
amb
=25°C; pulsed; t
p
≤ 10 s; Figure 2 and 3 -7A
T
amb
=70°C; pulsed; t
p
≤ 10 s; Figure 2 - 5.8 A
I
DM
peak drain current T
amb
=25°C; pulsed; t
p
≤ 10 µs; Figure 3 - 20.8 A
P
tot
total power dissipation T
amb
=25°C; pulsed; t
p
≤ 10 s; Figure 1 - 2.5 W
T
amb
=70°C; pulsed; t
p
≤ 10 s; Figure 1 - 1.6 W
T
stg
storage temperature −55 +150 °C
T
j
junction temperature −55 +150 °C
Source-drain diode
I
S
source (diode forward) current (DC) T
amb
=25°C; pulsed: t
p
≤ 10 s - 2.3 A
