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SI9410DY,518

P1-P3P4-P6P7-P9P10-P12
Philips Semiconductors
Si9410DY
N-channel TrenchMOS ™ logic level FET
Product data Rev. 03 — 23 January 2004 4 of 12
9397 750 12542
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
8. Thermal characteristics
8.1 Transient thermal impedance
Table 5: Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
R
th(j-a)
thermal resistance from junction to ambient mounted on a printed-circuit board;
minimum footprint, t
p
≤ 10 s; Figure 4
--50K/W
Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration.
03ae45
10
-1
1
10
10
2
10
-5
10
-4
10
-3
10
-2
10
-1
1 10
t
p
(s)
Z
th(j-a)
(K/W)
single pulse
δ
= 0.5
0.2
0.1
0.05
0.02
t
p
t
p
T
P
t
T
δ =
Philips Semiconductors
Si9410DY
N-channel TrenchMOS ™ logic level FET
Product data Rev. 03 — 23 January 2004 5 of 12
9397 750 12542
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
9. Characteristics
Table 6: Characteristics
T
j
=25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
V
GS(th)
gate-source threshold voltage I
D
= 250 µA; V
DS
=V
GS
; Figure 9 1--V
I
DSS
drain-source leakage current V
DS
=24V; V
GS
=0V
T
j
=25°C --2µA
T
j
=55°C --25µA
I
GSS
gate-source leakage current V
GS
= ±20 V; V
DS
= 0 V - - 100 nA
R
DSon
drain-source on-state resistance V
GS
= 10 V; I
D
=7A;Figure 7 and 8 - 1930mΩ
V
GS
=5V; I
D
=4A;Figure 8 - 2340mΩ
V
GS
= 4.5 V; I
D
= 3.5 A; Figure 7 and 8 - 2550mΩ
Dynamic characteristics
g
fs
forward transconductance V
DS
=15V; I
D
=7A - 15 - S
Q
g(tot)
total gate charge I
D
= 7 A; V
DS
= 15 V; V
GS
=10V;Figure 13 - 14.6 50 nC
Q
gs
gate-source charge - 2 - nC
Q
gd
gate-drain (Miller) charge - 3 - nC
t
d(on)
turn-on delay time V
DD
=25V; R
D
=25Ω; V
GS
=10V; R
G
=6Ω - 5 30 ns
t
r
rise time - 6 60 ns
t
d(off)
turn-off delay time - 21 150 ns
t
f
fall time - 11 140 ns
Source-drain (reverse) diode
V
SD
source-drain (diode forward) voltage I
S
= 2 A; V
GS
=0V;Figure 12 - 0.85 1.1 V
t
rr
reverse recovery time I
S
= 2 A; dI
S
/dt = −100 A/µs; V
GS
= 0 V - 30 - ns
Philips Semiconductors
Si9410DY
N-channel TrenchMOS ™ logic level FET
Product data Rev. 03 — 23 January 2004 6 of 12
9397 750 12542
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
T
j
=25°CT
j
=25°C and 150 °C; V
DS
> I
D
xR
DSon
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values.
Fig 6. Transfer characteristic: drain current as a
function of gate-source voltage; typical values.
T
j
=25°C
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values.
Fig 8. Normalized drain-source on-state resistance
factor as a function of junction temperature.
03ae47
0
10
20
30
0 0.2 0.4 0.6 0.8 1
V
DS
(V)
I
D
(A)
2.6 V
T
j
= 25
°
C
V
GS
= 2.4 V
10 V
2.8 V
3 V
3.4 V
3.2 V
4 V4.5 V6 V
3.6 V
03ae49
0
10
20
30
01234
V
GS
(V)
I
D
(A)
V
DS
> I
D
x R
DSon
T
j
= 25
°
C
150
°
C
03ae48
0
20
40
60
0 102030
I
D
(A)
R
DSon
(m
Ω
)
V
GS
= 3.2 V
T
j
= 25
°
C
4 V
10 V
6 V
4.5 V
3.6 V
3.4 V
03ad57
0
0.5
1
1.5
2
-60 0 60 120 180
T
j
(
°
C)
a
a
R
DSon
R
DSon 25 C
°
()
----------------------------
=
P1-P3P4-P6P7-P9P10-P12

SI9410DY,518

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Manufacturer:
NXP Semiconductors
Description:
MOSFET N-CH 30V SOT96-1
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