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SI9410DY,518

P1-P3P4-P6P7-P9P10-P12
Philips Semiconductors
Si9410DY
N-channel TrenchMOS ™ logic level FET
Product data Rev. 03 — 23 January 2004 7 of 12
9397 750 12542
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
I
D
= 250 µA; V
DS
=V
GS
T
j
=25°C; V
DS
=5V
Fig 9. Gate-source threshold voltage as a function of
junction temperature.
Fig 10. Sub-threshold drain current as a function of
gate-source voltage.
V
GS
= 0 V; f = 1 MHz
Fig 11. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values.
03aa33
0
0.5
1
1.5
2
2.5
-60 0 60 120 180
T
j
(
°
C)
V
GS(th)
(V)
max
typ
min
03ai52
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
0123
V
GS
(V)
I
D
(A)
typ maxmin
03ae52
10
10
2
10
3
10
-1
1 10 10
2
V
DS
(V)
C
(pF)
C
iss
C
oss
C
rss
Philips Semiconductors
Si9410DY
N-channel TrenchMOS ™ logic level FET
Product data Rev. 03 — 23 January 2004 8 of 12
9397 750 12542
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
T
j
=25°C and 150 °C; V
GS
=0V I
D
= 7 A; V
DD
=15V
Fig 12. Source (diode forward) current as a function of
source-drain (diode forward) voltage; typical
values.
Fig 13. Gate-source voltage as a function of gate
charge; typical values.
03ae51
0
10
20
30
0 0.3 0.6 0.9 1.2
V
SD
(V)
I
S
(A)
T
j
= 25
°
C
150
°
C
V
GS
= 0 V
03ae53
0
2
4
6
8
10
0 5 10 15
Q
G
(nC)
V
GS
(V)
I
D
= 7 A
T
j
= 25
°
C
V
DD
= 15 V
Philips Semiconductors
Si9410DY
N-channel TrenchMOS ™ logic level FET
Product data Rev. 03 — 23 January 2004 9 of 12
9397 750 12542
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
10. Package outline
Fig 14. SOT96-1 (SO8).
UNIT
A
max.
A
1
A
2
A
3
b
p
cD
(1)
E
(2)
(1)
eH
E
LL
p
QZywv θ
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC JEDEC JEITA
mm
inches
1.75
0.25
0.10
1.45
1.25
0.25
0.49
0.36
0.25
0.19
5.0
4.8
4.0
3.8
1.27
6.2
5.8
1.05
0.7
0.6
0.7
0.3
8
0
o
o
0.25 0.10.25
DIMENSIONS (inch dimensions are derived from the original mm dimensions)
Notes
1. Plastic or metal protrusions of 0.15 mm (0.006 inch) maximum per side are not included.
2. Plastic or metal protrusions of 0.25 mm (0.01 inch) maximum per side are not included.
1.0
0.4
SOT96-1
X
w M
θ
A
A
1
A
2
b
p
D
H
E
L
p
Q
detail X
E
Z
e
c
L
v M
A
(A )
3
A
4
5
pin 1 index
1
8
y
076E03 MS-012
0.069
0.010
0.004
0.057
0.049
0.01
0.019
0.014
0.0100
0.0075
0.20
0.19
0.16
0.15
0.05
0.244
0.228
0.028
0.024
0.028
0.012
0.010.010.041 0.004
0.039
0.016
0 2.5 5 mm
scale
SO8: plastic small outline package; 8 leads; body width 3.9 mm
SOT96-1
99-12-27
03-02-18
P1-P3P4-P6P7-P9P10-P12

SI9410DY,518

Mfr. #:
Buy SI9410DY,518
Manufacturer:
NXP Semiconductors
Description:
MOSFET N-CH 30V SOT96-1
Lifecycle:
New from this manufacturer.
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