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NB6L295MMNG

P1-P3P4-P6P7-P9P10-P12P13-P13
NB6L295M
http://onsemi.com
4
Table 2. ATTRIBUTES
Characteristics Value
Input Default State Resistors
37 kW
ESD Protection Human Body Model
Machine Model
> 2 kV
> 100V
Moisture Sensitivity (Note 3) QFN−24 Level 1
Flammability Rating Oxygen Index: 28 to 34 UL 94 V−0 @ 0.125 in
Transistor Count 3094
Meets or exceeds JEDEC Spec EIA/JESD78 IC Latchup Test
3. For additional information, see Application Note AND8003/D.
Table 3. MAXIMUM RATINGS
Symbol Parameter Condition 1 Condition 2 Rating Unit
V
CC
, V
CC0
,
V
CC1
Positive Power Supply GND = 0 V 4.0 V
V
IO
Positive Input/Output Voltage GND = 0 V −0.5vV
IO
vV
CC
+0.5 4.5 V
V
INPP
Differential Input Voltage |INx − INx| V
CC
− GND V
I
IN
Input Current Through R
T
(50 W Resistor)
$50 mA
I
OUT
Output Current Through R
T
(50 W Resistor)
$50 mA
T
A
Operating Temperature Range −40 to +85 °C
T
stg
Storage Temperature Range −65 to +150 °C
q
JA
Thermal Resistance (Junction−to−Ambient) (Note 4) 0 lfpm
500 lfpm
QFN−24
QFN−24
37
32
°C/W
°C/W
q
JC
Thermal Resistance (Junction−to−Case) (Note 4) QFN−24 11 °C/W
T
sol
Wave Solder Pb−Free 265 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
4. JEDEC standard multilayer board − 2S2P (2 signal, 2 power) with 8 filled thermal vias under exposed pad.
NB6L295M
http://onsemi.com
5
Table 4. DC CHARACTERISTICS, MULTI−LEVEL INPUTS V
CC
= V
CC0
= V
CC1
= 2.375 V to 3.6 V, GND = 0 V, T
A
= −40°C to
+85°C
Symbol
Characteristic Min Typ Max Unit
POWER SUPPLY CURRENT
I
CC
Power Supply Current (Inputs, V
TX
and Outputs Open) (Sum of I
CC
,
I
CC0
, and I
CC1
)
170 215 mA
CML OUTPUTS (Notes 5 and 6, Figure 22)
V
OH
Output HIGH Voltage
V
CC
= V
CC0
= V
CC1
= 3.3 V
V
CC
= V
CC0
= V
CC1
= 2.5 V
V
CC
− 40
3260
2460
V
CC
− 10
3290
2490
V
CC
3300
2500
mV
V
OL
Output LOW Voltage
V
CC
= V
CC0
= V
CC1
= 3.3 V
V
CC
= V
CC0
= V
CC1
= 2.5 V
V
CC
− 500
2800
2000
V
CC
− 400
2900
2100
V
CC
− 300
3000
2200
mV
DIFFERENTIAL INPUT DRIVEN SINGLE−ENDED (see Figures 11 and 12) (Note 7)
V
th
Input Threshold Reference Voltage Range 1050 V
CC
− 150 mV
V
IH
Single−Ended Input HIGH Voltage V
th
+150 V
CC
mV
V
IL
Single−Ended Input LOW Voltage GND V
th
− 150 mV
V
ISE
Single−Ended Input Voltage Amplitude (V
IH
− V
IL
) 300 V
CC
− GND mV
DIFFERENTIAL INPUTS DRIVEN DIFFERENTIALLY (see Figures 13 and 14) (Note 8)
V
IHD
Differential Input HIGH Voltage 1200 V
CC
mV
V
ILD
Differential Input LOW Voltage GND V
CC
− 150 mV
V
ID
Differential Input Voltage Swing (INx, INx) (V
IHD
− V
ILD
) 150 V
CC
− GND mV
V
CMR
Input Common Mode Range (Differential Configuration) (Note 9) 950 V
CC
– 75 mV
I
IH
Input HIGH Current INx/INX, (VTn/VTn Open) −150 150
mA
I
IL
Input LOW Current IN/INX, (VTn/VTn Open) −150 150
mA
SINGLE−ENDED LVCMOS/LVTTL CONTROL INPUTS
V
IH
Single−Ended Input HIGH Voltage 2000 V
CC
mV
V
IL
Single−Ended Input LOW Voltage GND 800 mV
I
IH
Input HIGH Current −150 150
mA
I
IL
Input LOW Current −150 150
mA
TERMINATION RESISTORS
R
TIN
Internal Input Termination Resistor 40 50 60
W
R
TOUT
Internal Output Termination Resistor 40 50 60
W
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
5. CML outputs loaded with 50 W to V
CC
for proper operation.
6. Input and output parameters vary 1:1 with V
CC
.
7. V
th
, V
IH
, V
IL,
and V
ISE
parameters must be complied with simultaneously. V
th
is applied to the complementary input when operating in
single−ended mode.
8. V
IHD
, V
ILD,
V
ID
and V
CMR
parameters must be complied with simultaneously.
9. V
CMR
(min) varies 1:1 with voltage on GND pin, V
CMR
(max) varies 1:1 with V
CC
. The V
CMR
range is referenced to the most positive side of
the differential input signal.
NB6L295M
http://onsemi.com
6
Table 5. AC CHARACTERISTICS V
CC
= V
CC0
= V
CC1
= 2.375 V to 3.6 V, GND = 0 V, T
A
= −40°C to +85°C (Note 10)
Symbol
Characteristic Min Typ Max Unit
f
SCLK
Serial Clock Input Frequency, 50% Duty Cycle 20 MHz
V
OUTPP
Output Voltage Amplitude (@ V
INPPmin
) f
in
≤ 1.5 GHz
(Note 15) (See Figure 23)
210 380 mV
f
DATA
Maximum Data Rate (Note 14) 2.5 Gb/s
t
Range
Programmable Delay Range (@ 50 MHz)
Dual Mode IN0/IN0
to Q0/Q0 or IN1/IN1 to Q1/Q1
Extended Mode IN0/IN0 to Q1/Q1
0
0
5.7
11.2
6.9
13.7
ns
t
SKEW
Duty Cycle Skew (Note 11)
Within Device Skew − Dual Mode D[8:0] = 0
D[8:0] = 1
0 1
55
67
4
96
170
ps
L
in
Linearity (Note 12) $15 $20 ps
t
s
Setup Time (@ 20 MHz) SDIN to SCLK
SCLK to SLOAD
EN
to SDIN
0.5
1.5
0.5
0.3
1.0
ns
t
h
Hold Time SDIN to SCLK
SCLK to SLOAD
EN
to SLOAD
1.0
1.0
0.5
0.6 ns
t
pwmin
Minimum Pulse Width SLOAD 1 ns
t
JITTER
Random Clock Jitter RMS; SETMIN to SETMAX
(Note 13) f
in
≤ 1.5 GHz
Dual Mode IN0/IN0 to Q0/Q0 or IN1/IN1 to Q1/Q1
Extended Mode IN0/IN0 to Q1/Q1
Deterministic Jitter; SETMIN to SETMAX (Note 14) f
D
ATA
v 2.5 Gbps
Dual Mode IN0/IN0 to Q0/Q0 or IN1/IN1 to Q1/Q1
2
4
2
6
12
15
ps
V
INPP
Input Voltage Swing/Sensitivity
(Differential Configuration) (Note 15)
150 V
CC
− GND mV
t
r,
t
f
Output Rise/Fall Times (@ 50 MHz), (20% − 80%)
Qx, Qx
85 100 150 ps
Symbol Characteristic
−405C +255C +855C
Unit
Min Typ Max Min Typ Max Min Typ Max
t
PLH
,
t
PHL
Propagation Delay (@ 50 MHz)
Dual Mode IN0/IN0
to Q0/Q0 or IN1/IN1 to Q1/Q1
D[8:0] = 0
D[8:0] = 1
Extended Mode IN0/IN0 to Q1/Q1
D[8:0] = 0
D[8:0] = 1
2.7
7.2
5.0
14
3.1
8.5
5.9
16.4
3.3
9.1
6.5
17.7
2.8
7.4
5.2
14.4
3.2
8.5
6.2
16.6
3.5
9.6
6.6
18.7
3.1
8.6
5.9
17
3.4
9.3
6.6
19
3.8
10.7
7.3
21
ns
Dt
Step Delay
(Selected D Bit HIGH All Others LOW)
D0 HIGH
D1 HIGH
D2 HIGH
D3 HIGH
D4 HIGH
D5 HIGH
D6 HIGH
D7 HIGH
D8 HIGH
8.4
16.4
41.2
85
178
360
722
1448
2903
12.4
25.1
58.3
108
210
405
796
1579
3143
ps
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
10.Measured by forcing V
INPPmin
and V
INPPmax
from a 50% duty cycle clock source, V
CMR
(min and max). All loading with an external
R
L
= 50 W to V
CC
. See Figure 20. Input edge rates 40 ps (20% − 80%).
11. Duty cycle skew is measured between differential outputs using the deviations of the sum of T
pw
− and T
pw
+ @ 0.5 GHz.
12.Deviation from a linear delay (actual Min to Max) in the Dual Mode 511 programmable steps; 3.3 V @ 25°C, 400 mV V
INPP
.
13.Additive Random CLOCK jitter with 50% duty cycle input clock signal. 1000 WFMS, JIT3 Software.
14.NRZ data at PRBS23 and K28.5. 10,000 WFMS, TDS8000.
15.Input and output voltage swing is a single−ended measurement operating in differential mode.
P1-P3P4-P6P7-P9P10-P12P13-P13

NB6L295MMNG

Mfr. #:
Buy NB6L295MMNG
Manufacturer:
ON Semiconductor
Description:
Delay Lines / Timing Elements CML DUAL PROG DELAY
Lifecycle:
New from this manufacturer.
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