25AA02E48/25AA02E64
DS20002123F-page 10 2008-2016 Microchip Technology Inc.
2.5 Read Status Register Instruction
(RDSR)
The Read Status Register instruction (RDSR) provides
access to the STATUS register. See Figure 2-6 for the
RDSR timing sequence. The STATUS register may be
read at any time, even during a write cycle. The
STATUS register is formatted as follows:
TABLE 2-2: STATUS REGISTER
The Write-In-Process (WIP) bit indicates whether the
25AA02EXX is busy with a write operation. When set to
a ‘1’, a write is in progress, when set to a ‘0’, no write is
in progress. This bit is read-only.
The Write Enable Latch (WEL) bit indicates the status
of the write enable latch and is read-only. When set to
a ‘1’, the latch allows writes to the array, when set to a
0’, the latch prohibits writes to the array. The state of
this bit can always be updated via the WREN or WRDI
commands regardless of the state of write protection
on the STATUS register. These commands are shown
in Figure 2-4 and Figure 2-5.
The Block Protection (BP0 and BP1) bits indicate
which blocks are currently write-protected. These bits
are set by the user issuing the WRSR instruction, which
is shown in Figure 2-7. These bits are nonvolatile and
are described in more detail in Table 2-3.
FIGURE 2-6: READ STATUS REGISTER TIMING SEQUENCE (RDSR)
7 654 3 2 1 0
–––W/RW/R R R
X XXXBP1 BP0 WEL WIP
W/R = writable/readable. R = read-only.
SO
SI
CS
9101112131415
11000000
7654 210
Instruction
Data from STATUS register
High-Impedance
SCK
0 2345671
8
3
2008-2016 Microchip Technology Inc. DS20002123F-page 11
25AA02E48/25AA02E64
2.6 Write Status Register Instruction
(WRSR)
The Write Status Register instruction (WRSR) allows
the user to write to the nonvolatile bits in the STATUS
register as shown in Table 2-2. See Figure 2-7 for the
WRSR timing sequence. Four levels of protection for
the array are selectable by writing to the appropriate
bits in the STATUS register. The user has the ability to
write-protect none, one, two, or all four of the
segments of the array as shown in Table 2-3.
TABLE 2-3: ARRAY PROTECTION
FIGURE 2-7: WRITE STATUS REGISTER TIMING SEQUENCE (WRSR)
BP1 BP0
Array Addresses
Write-Protected
00
none
01
upper 1/4
(C0h-FFh)
10
upper 1/2
(80h-FFh)
11
all
(00h-FFh)
SO
SI
CS
9101112131415
01000000
7654
210
Instruction Data to STATUS register
High-Impedance
SCK
0 2345671
8
3
25AA02E48/25AA02E64
DS20002123F-page 12 2008-2016 Microchip Technology Inc.
2.7 Data Protection
The following protection has been implemented to
prevent inadvertent writes to the array:
The write enable latch is reset on power-up
A write enable instruction must be issued to set
the write enable latch
After a byte write, page write or STATUS register
write, the write enable latch is reset
•CS
must be set high after the proper number of
clock cycles to start an internal write cycle
Access to the array during an internal write cycle
is ignored and programming is continued
2.8 Power-On State
The 25AA02EXX powers on in the following state:
The device is in low-power Standby mode
(CS
= 1)
The write enable latch is reset
SO is in high-impedance state
A high-to-low-level transition on CS
is required to
enter active state
TABLE 2-4: WRITE-PROTECT FUNCTIONALITY MATRIX
WP
(pin 3)
WEL
(SR bit 1)
Protected Blocks Unprotected Blocks STATUS Register
0 (low) x Protected Protected Protected
1 (high) 0 Protected Protected Protected
1 (high) 1 Protected Writable Writable
x = don’t care

25AA02E48T-I/SN

Mfr. #:
Manufacturer:
Microchip Technology
Description:
EEPROM 2K, 256x8, 1.8V MAC Addressable
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New from this manufacturer.
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