CY7C1046D
Document Number: 38-05705 Rev. *G Page 13 of 16
Package Diagrams
Figure 9. 32-pin SOJ (400 Mils) V32.4 (Molded SOJ V33) Package Outline, 51-85033
51-85033 *E
CY7C1046D
Document Number: 38-05705 Rev. *G Page 14 of 16
Acronyms Document Conventions
Units of Measure
Acronym Description
CMOS Complementary Metal Oxide Semiconductor
CE
Chip Enable
I/O Input/Output
OE
Output Enable
SOJ Small-Outline J-leaded
SRAM Static Random Access Memory
TTL Transistor-Transistor Logic
WE
Write Enable
Symbol Unit of Measure
°C degree Celsius
MHz megahertz
µs microsecond
µA microampere
mA milliampere
ns nanosecond
% percent
pF picofarad
Vvolt
Wwatt
CY7C1046D
Document Number: 38-05705 Rev. *G Page 15 of 16
Document History Page
Document Title: CY7C1046D, 4-Mbit (1 M × 4) Static RAM
Document Number: 38-05705
Rev. ECN No. Issue Date
Orig. of
Change
Description of Change
** 307613 See ECN RKF New data sheet.
*A 399070 See ECN NXR Changed from Advance to Preliminary
Changed address of Cypress Semiconductor Corporation on Page# 1 from
“3901 North First Street” to “198 Champion Court”
Removed -20 speed bin
Removed L-Version
Redefined I
CC
values for Com’l and Ind’l temperature ranges
I
CC
(Com’l):
Changed from 70 and 55 mA to 75 and 70 mA for 12 and 15 ns
speed bins respectively
I
CC
(Ind’l): Changed from 80, 70 and 55 mA to 90, 85 and 80 mA for 10, 12 and
15 ns speed bins respectively
Added Industrial Operating Range
Changed reference voltage level for measurement of Hi-Z parameters from
500 mV to 200 mV
Changed V
CC
to 3 V in the Input pulse waveform at the AC Test Loads and
Waveforms on page # 3
Changed t
SCE
from 8 to 7 ns for -10 speed bin
Added Truth Table
Added 10 ns parts in the Ordering Information table
Changed part names from V33 to V324 in the Ordering Information Table
Shaded Ordering Information Table
*B 459072 See ECN NXR Converted from Preliminary to Final.
Removed -12 and -15 Speed bins
Removed Commercial Operating Range product information.
Changed Maximum Rating for supply voltage from 7V to 6V
Changed the Capacitance value of input pins and I/O pins from 6 pF to 8 pF
Updated the Thermal Resistance table.
Changed t
HZWE
from 6 ns to 5 ns
Added footnote #4 and 11
Updated footnote #7 on High-Z parameter measurement
Updated the Ordering Information and replaced Package Name column with
Package Diagram in the Ordering Information table.
*C 3059162 10/14/2010 PRAS Added Ordering Code Definitions.
Updated Package Diagrams.
*D 3098812 12/01/2010 PRAS Added Acronyms and Units of Measure.
Minor edits and updated in new template.
*E 3446913 11/24/2011 TAVA Removed Note referring to SRAM System Guidelines application note on page
1.
Updated test conditions for IIX parameter.
*F 4039540 06/25/2013 MEMJ Updated Functional Description.
Updated Electrical Characteristics:
Added one more Test Condition “V
CC
= Max, I
OH
= –0.1 mA” for V
OH
parameter
and added maximum value corresponding to that Test Condition.
Added Note 2 and referred the same note in maximum value for V
OH
parameter
corresponding to Test Condition “V
CC
= Max, I
OH
= –0.1 mA”.
*G 4574311 11/20/2014 MEMJ Added related documentation hyperlink in page 1.
Updated Figure 9 in Package Diagrams (spec 51-85033 *D to *E).

CY7C1046D-10VXI

Mfr. #:
Manufacturer:
Cypress Semiconductor
Description:
SRAM 4Mb 10ns 1M x 4 Fast Async SRAM
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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