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MGA-82563-TR2G

P1-P3P4-P6P7-P9P10-P11
MGA-82563
0.1– 6 GHz 3 V, 17 dBm Amplier
Data Sheet
Features
x Lead-free Option Available
x +17.3 dBm P
1 dB
at 2.0 GHz
+20 dBm P
sat
at 2.0 GHz
x Single +3V Supply
x 2.2 dB Noise Figure at 2.0 GHz
x 13.2 dB Gain at 2.0 GHz
x Ultra-miniature Package
x Unconditionally Stable
Applications
x Buer or Driver Amp for PCS,
PHS, ISM, SATCOM and WLL Applications
x High Dynamic Range LNA
Description
Avago’s MGA-82563 is an economical, easy-to-use GaAs
MMIC amplier that oers excellent power and low noise
gure for applications from 0.1 to 6 GHz. Packaged in an
ultra-miniature SOT-363 package, it requires half the
board space of a SOT-143 package.
The input and output of the amplier are matched to
50: (below 2:1 VSWR) across the entire bandwidth,
eliminating the expense of external matching. The am-
plier allows a wide dynamic range by oering a 2.2 dB
NF coupled with a +31 dBm Output IP
3
.
The circuit uses state-of-the-art PHEMT technology
with proven reliability. On-chip bias circuitry allows op-
eration from a single +3 V power supply, while resistive
feedback ensures stability (K>1) over all frequencies and
temperatures.
Surface Mount Package
SOT-363 (SC-70)
Pin Connections and Package Marking
OUTPUT
and V
d
GND
82x
GND
GND
INPUT
1
2
3
6
5
4 GND
Note: Package marking provides orientation and identication.
"82" = Device Code
"x" = Date code character identies month of manufacture
Simplied Schematic
INPUT
3
OUTPUT
and V
d
6
GND
BIAS
1, 2, 4, 5
BIAS
Attention:
Observe precautions for
handling electrostatic sensitive devices.
ESD Human Body Model (Class 0)
Refer to Avago Application Note A004R:
Electrostatic Discharge Damage and Control.
2
Thermal Resistance
[2]
:
T
ch-c
= 180°C/W
Notes:
1. Permanent damage may occur if any
of these limits are exceeded.
2. T
C
= 25°C (T
C
is dened to be the tem-
perature at the top of the package.)
MGA-82563 Absolute Maximum Ratings
Absolute
Symbol Parameter Units Maximum
[1]
V
d
Device Voltage, RF Output V 5.0
to Ground
V
gd
Device Voltage, Gate V -6.0
to Drain
V
in
Range of RF Input Voltage V +0.5 to -1.0
to Ground
P
in
CW RF Input Power dBm +13
T
ch
Channel Temperature °C 165
T
STG
Storage Temperature °C -65 to 150
MGA-82563 Electrical Specications, T
C
= 25°C, Z
O
= 50 , V
d
= 3 V
Symbol Parameters and Test Conditions Units Min. Typ. Max. Std Dev
[2]
G
test
Gain in test circuit
[1]
f = 2.0 GHz 12.0 13.2 15 0.35
NF
test
Noise Figure in test circuit
[1]
f = 2.0 GHz 2.2 2.9 0.20
NF
50
Noise Figure in 50  system f = 0.5 GHz dB 2.3
f = 1.0 GHz 2.2
f = 2.0 GHz 2.2 0.20
f = 3.0 GHz 2.2
f = 4.0 GHz 2.4
f = 6.0 GHz 2.7
|S
21
|
2
Gain in 50  system f = 0.5 GHz dB 14.7
f = 1.0 GHz 14.5
f = 2.0 GHz 13.5 0.35
f = 3.0 GHz 12.1
f = 4.0 GHz 10.7
f = 6.0 GHz 8.8
P
1 dB
Output Power at 1 dB Gain Compression f = 0.5 GHz dBm 17.4
f = 1.0 GHz 17.5
f = 2.0 GHz 17.3 0.54
f = 3.0 GHz 17.1
f = 4.0 GHz 17.0
f = 6.0 GHz 16.8
IP
3
Output Third Order Intercept Point f = 2.0 GHz dBm +31 1.0
VSWR
in
Input VSWR f = 0.2–5.0 GHz 1.8:1
VSWR
out
Output VSWR f = 0.2–5.0 GHz 1.2:1
I
d
Device Current mA 63 84 101
Notes:
1. Guaranteed specications are 100% tested in the circuit in Figure 10 in the Applications Information section.
2. Standard deviation number is based on measurement of at least 500 parts from three non-consecutive wafer lots during the initial character-
ization of this product, and is intended to be used as an estimate for distribution of the typical specication.
3
MGA-82563 Typical Performance, T
C
= 25° C, V
d
= 3 V
034512 6 0 34512 6
FREQUENCY (GHz) FREQUENCY (GHz)
Figure 2. Noise Figure (into 50 ) vs. Frequency and
Temperature.
T
A
= +85C
T
A
= +25C
T
A
= –40C
0
2
4
6
8
16
12
14
10
GAIN (dB)
0
1
2
3
4
5
NOISE FIGURE (dB)
T
A
= +85C
T
A
= +25C
T
A
= –40C
Figure 1. 50 Power Gain vs. Frequency and
Temperature.
034512 6
FREQUENCY (GHz)
Figure 3. Output Power @ 1 dB Gain Compression vs.
Frequency and Temperature.
P
1 dB
(dBm)
14
15
16
17
18
19
T
A
= +85C
T
A
= +25C
T
A
= –40C
0
1
2
3
4
5
034512 6
NOISE FIGURE (dB)
FREQUENCY (GHz)
Figure 5. Noise Figure (into 50 ) vs.
Frequency and Voltage.
V
d
= 3.3V
V
d
= 3.0V
V
d
= 2.7V
14
15
16
17
18
19
034512 6
FREQUENCY (GHz)
Figure 6. Output Power @ 1 dB Gain Compression vs.
Frequency and Voltage.
P
1 dB
(dBm)
V
d
= 3.3V
V
d
= 3.0V
V
d
= 2.7V
0
2
4
6
8
16
12
14
10
034512 6
GAIN (dB)
FREQUENCY (GHz)
Figure 4. 50 Power Gain vs. Frequency and Voltage.
V
d
= 3.3V
V
d
= 3.0V
V
d
= 2.7V
034512 6
VSWR (n:1)
FREQUENCY (GHz)
Figure 7. Input and Output VSWR into 50 vs.
Frequency.
1
1.5
2
3
2.5
4
3.5
03412
10
20
30
90
40
50
60
70
80
110
100
DEVICE CURRENT (mA)
DEVICE VOLTAGE (V)
Figure 8. Device Current vs. Voltage and
Temperature.
FREQUENCY (GHz)
Figure 9. Minimum Noise Figure and Associated Gain
vs. Frequency.
GAIN and NF (dB)
NF
Gain
034512 6
0
2
4
6
8
16
12
14
10
Input
Output
T
A
= +85C
T
A
= +25C
T
A
= -40C
P1-P3P4-P6P7-P9P10-P11

MGA-82563-TR2G

Mfr. #:
Buy MGA-82563-TR2G
Manufacturer:
Broadcom / Avago
Description:
RF Amplifier 3 SV 13.2 dB
Lifecycle:
New from this manufacturer.
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