MGA-82563-TR2G

7
A schematic diagram of the application circuit is shown
in Figure 15. DC blocking capacitors (C1 and C2) are used
at the input and output of the MMIC to isolate the de-
vice from adjacent circuits. While the input terminal of
the MGA-82563 is at ground potential, it is not a current
sink. If the input is connected to a preceding stage that
has a voltage present, the use of the DC blocking capaci-
tor (C1) is required.
When multiple bypass capacitors are used, consideration
should be given to potential resonances. It is important
to ensure that the capacitors when combined with ad-
ditional parasitic Ls and Cs on the circuit board do not
form resonant circuits. The addition of a small value re-
sistor in the bias supply line between bypass capacitors
will often de-Q the bias circuit and eliminate the eect
of a resonance.
The value of the DC blocking and RF bypass capacitors
(C1 - C3) should be chosen to provide a small reactance
(typically <5 ohms) at the lowest operating frequency.
The reactance of the RF choke (RFC) should be high (e.g.,
several hundred ohms) at the lowest frequency of opera-
tion.
The MGA-82563’s response at low frequencies is limited
to approximately 100 MHz by the size of capacitors inte-
grated on the MMIC chip.
The input and output of the MGA-82563 are well matched
to 50 Ω. Without external matching elements, the in-
put VSWR of the MGA-82563 is ≤ 2.0:1 from 300 MHz
to 6 GHz and the Output VSWR is ≤ 1.6:1 from 100 MHz
through 6 GHz.
For applications requiring minimum noise gure (NF
o
), some
improvement over a 50Ω match is possible by matching the
signal input to the optimum noise match impedance, *
o
, as
specied in the Typical Noise Parameters table. The data
in the table shows the noise match to be very close to 50Ω.
The completed application amplier with all compo-
nents and SMA connectors is shown in Figure 16.
Figure 16. Complete Application Circuit.
C2
C2
C4
C1
RFC
V
d
RF
Output
RF
Input
Figure 15. Schematic Diagram.
DC bias is applied to the MGA-82563 through the RF
Output pin. An inductor (RFC), or length of high imped-
ance transmission line (preferably O/4 at the band cen-
ter), is used to isolate the RF from the DC supply.
The power supply is bypassed to ground with capacitor
C3 to keep RF o of the DC lines and to prevent gain dips
or peaks in the response of the amplier.
An additional bypass capacitor, C4, may be added to the
bias line near the V
d
connection to eliminate unwanted
feedback through bias lines that could cause oscillation.
C4 will not normally be needed unless several stages are
cascaded using a common power supply.
IN
OUT
+V
C4
C3
RFC
C2
C1
MGA-8-A
8
-20 -5 0 5-15 -10 10
Pout and IP
3
(dBm), PAE (%)
POWER IN (dBm)
-10
0
10
30
20
50
40
Power
IP
3
PAE
-30 -5 0 5 10 15-15 -10 20
Pout, 3rd, 5th, 7th HARMONICS (dBm)
FREQUENCY (GHz)
-60
-50
-40
-20
-30
30
-10
0
10
20
7th
5th
3rd
Pout
Operation in Saturation for Higher Output Power
For applications such as pre-driver, driver, and output
stages in transmitters, the MGA-82563 can be operated
in saturation to deliver up to 100 mW (20 dBm) of output
power. The power added eciency approaches 50% at
these power levels.
There are several design considerations related to reli-
ability and performance that should be taken into ac-
count when operating the amplier in saturation.
First of all, it is important that the stage preceding the
MGA-82563 not overdrive the device. Referring to the
Absolute Maximum Ratings” table, the maximum
allowable input power is +13 dBm. This should be re-
garded as the input power level above which the device
could be permanently damaged.
Driving the amplier into saturation will also aect elec-
trical performance. Figure 17 presents the Output Pow-
er, Third Order Intercept Point (Output IP
3)
, and Power
Added Eciency (PAE) as a function of Input Power. This
data represents performance into a 50Ω load. Since the
output impedance of the device changes when driven
into saturation, it is possible to obtain even more output
power with a “power match. The optimum impedance
match for maximum output power is dependent on spe-
cic frequency and actual output power level and can be
arrived at empirically.
Increased eciency (up to 45% at full output power) is
another benet of saturated operation. At high output
power levels, the bias supply current drops by about
15%. This is normal and is taken into account for the PAE
data in Figure 17.
Like other active devices, the intermodulation products
of the MGA-82563 increase as the device is driven fur-
ther into nonlinear operation. The 3rd, 5th, and 7th order
intermodulation products of the MGA-82563 are shown
in Figure 18 along with the fundamental response. This
data was measured in the test circuit in Figure 10.
Figure 17. Output Power, IP
3
, and Power-Added-Eciency vs. Input Power.
(V
d
= 3.0 V)
As the input power is increased beyond the linear range
of the amplier, the gain becomes more compressed.
Gain as a function of either input or output power may
be derived from Figure 17. Gain compression renders the
amplier less sensitive to variations in the power level
from the preceding stage. This can be a benet in sys-
tems requiring fairly constant output power levels from
the MGA-82563.
Figure 18. Intermodulation Products vs. Input Power.
(V
d
= 3.0 V)
Operation at Bias Voltages Other than 3 Volts
While the MGA-82563 is designed primarily for use in +3
volt applications, the internal bias regulation circuitry al-
lows it to be operated with power supply voltages from
+1.5 to +4 volts. Performance of Gain, Noise Figure, and
Output Power over a wide range of bias voltage is shown
in Figure 19. (This data was measured in the test circuit
in Figure 10.) As can be seen, the gain and NF are fairly
at, but an increase in output power is possible by using
higher voltages. The use of +4 volts increases the P
1dB
by
over 2 dBm.
If bias voltages greater than 3 volts are used, particular
attention should be given to thermal management. Re-
fer to the Thermal Design Considerations section for
more details.
9
0.026
0.079
0.018
0.039
Dimensions in inches.
24 Ω
(a)
+5 V
Silicon
Diodes
(b)
+5 V
Zener
Diode
(c)
+5 V
SOT-363 PCB Footprint
A recommended PCB pad layout for the miniature SOT-
363 (SC-70) package used by the MGA-82563 is shown in
Figure 21 (dimensions are in inches). This layout provides
ample allowance for package placement by automated
assembly equipment without adding parasitics that
could impair the high frequency RF performance of the
MGA-82563. The layout is shown with a nominal SOT-363
package footprint superimposed on the PCB pads.
Figure 21. Recommended PCB Pad Layout for Avago’s SC70 6L/SOT-363 Products.
NF, GAIN, P
1 dB
(dB)
SUPPLY VOLTAGE (V)
0
2
4
8
6
22
10
12
14
16
18
20
03412
Power
Gain
NF
Figure 19. Gain, Noise Figure, and Output Power vs. Supply Voltage.
There are several means of biasing the MGA-82563 at
3 volts in systems that use higher power supply voltages.
The simplest method, shown in Figure 20a, is to use a
series resistor to drop the device voltage to 3 volts. For
example, a 24 Ω resistor will drop a 5-volt supply to 3
volts at the nominal current of 84 mA. Some variation in
performance could be expected for this method due to
variations in current within the specied 63 to 101 mA
min/max range.
Figure 20. Biasing From Higher Supply Voltages.
A second method illustrated in Figure 20b, is to use for-
ward-biased diodes in series with the power supply. For
example, three silicon diodes connected in series will
drop a 5-volt supply to approximately 3 volts.
The use of the series diode approach has the advantage
of less dependency on current variation in the ampliers
since the forward voltage drop of a diode is somewhat
current independent.
Reverse breakdown diodes (e.g., Zener diodes) could
also be used as in Figure 20c. However, care should be
taken to ensure that the noise generated by diodes in
either Zener or reverse breakdown is adequately ltered
(e.g., bypassed to ground) such that the diode’s noise is
not added to the amplier’s signal.
Note that the voltage-dropping component in each of
these three methods must be able to safely dissipate up
to 200 mW.

MGA-82563-TR2G

Mfr. #:
Manufacturer:
Broadcom / Avago
Description:
RF Amplifier 3 SV 13.2 dB
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet