OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

BTA225B-800B,118

P1-P3P4-P6P7-P9P10-P12P13-P15
IMPORTANT NOTICE
10 December 2015
1. Global joint venture starts operations as WeEn Semiconductors
Dear customer,
As from November 9th, 2015 NXP Semiconductors N.V. and Beijing JianGuang Asset
Management Co. Ltd established Bipolar Power joint venture (JV), WeEn Semiconductors, which
will be used in future Bipolar Power documents together with new contact details.
In this document where the previous NXP references remain, please use the new links as shown
below.
WWW - For www.nxp.com use www.ween-semi.com
Email - For salesaddresses@nxp.com use salesaddresses@ween-semi.com
For the copyright notice at the bottom of each page (or elsewhere in the document, depending
on the version) “
©
NXP Semiconductors N.V. {year}. All rights reserved” becomes “
©
WeEn
Semiconductors Co., Ltd. {year}. All rights reserved”
If you have any questions related to this document, please contact our nearest sales office via e-
mail or phone (details via salesaddresses@ween-semi.com).
Thank you for your cooperation and understanding,
WeEn Semiconductors
D
2
P
A
K
BTA225B-800B
3Q Hi-Com Triac
6 August 2014 Product data sheet
Scan or click this QR code to view the latest information for this product
1. General description
Planar passivated high commutation three quadrant triac in a SOT404 (D2PAK) surface
mountable plastic package intended for use in circuits where high static and dynamic dV/
dt and high dI/dt can occur. This "series B" triac will commutate the full rated RMS current
at the maximum rated junction temperature without the aid of a snubber.
2. Features and benefits
•
3Q technology for improved noise immunity
•
High blocking voltage capability
•
High commutation capability with maximum false trigger immunity
•
High immunity to false turn-on by dV/dt
•
Less sensitive gate for very high noise immunity
•
Planar passivated for voltage ruggedness and reliability
•
Surface mountable package
•
Triggering in three quadrants only
3. Applications
•
Heating controls
•
High power motor control
•
High power switching
4. Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
DRM
repetitive peak off-
state voltage
- - 800 V
I
TSM
non-repetitive peak on-
state current
full sine wave; T
j(init)
= 25 °C;
t
p
= 20 ms; Fig. 4; Fig. 5
- - 190 A
I
T(RMS)
RMS on-state current full sine wave; T
mb
≤ 91 °C; Fig. 1;
Fig. 2; Fig. 3
- - 25 A
Static characteristics
I
GT
gate trigger current V
D
= 12 V; I
T
= 0.1 A; T2+ G+;
T
j
= 25 °C; Fig. 7
2 18 50 mA
NXP Semiconductors
BTA225B-800B
3Q Hi-Com Triac
BTA225B-800B All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet 6 August 2014 2 / 14
Symbol Parameter Conditions Min Typ Max Unit
V
D
= 12 V; I
T
= 0.1 A; T2+ G-;
T
j
= 25 °C; Fig. 7
2 21 50 mA
V
D
= 12 V; I
T
= 0.1 A; T2- G-;
T
j
= 25 °C; Fig. 7
2 34 50 mA
5. Pinning information
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol
1 T1 main terminal 1
2 T2 main terminal 2
3 G gate
mb T2 mounting base; main
terminal 2
mb
1 3
2
D2PAK (SOT404)
sym051
T1
G
T2
6. Ordering information
Table 3. Ordering information
PackageType number
Name Description Version
BTA225B-800B D2PAK plastic single-ended surface-mounted package (D2PAK); 3 leads
(one lead cropped)
SOT404
P1-P3P4-P6P7-P9P10-P12P13-P15

BTA225B-800B,118

Mfr. #:
Buy BTA225B-800B,118
Manufacturer:
WeEn Semiconductors
Description:
Triacs 800V 25A
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet