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BTA225B-800B,118

P1-P3P4-P6P7-P9P10-P12P13-P15
NXP Semiconductors
BTA225B-800B
3Q Hi-Com Triac
BTA225B-800B All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet 6 August 2014 6 / 14
8. Thermal characteristics
Table 5. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
full cycle; Fig. 6 - - 1 K/WR
th(j-mb)
thermal resistance
from junction to
mounting base
half cycle; Fig. 6 - - 1.4 K/W
R
th(j-a)
thermal resistance
from junction to
ambient
printed circuit board (FR4) mounted - 55 - K/W
003aak972
10
-1
10
-2
1
10
Z
th(j-mb)
(K/W)
10
-3
t
p
(s)
10
-5
1 1010
-1
10
-2
10
-4
10
-3
(1)
(2)
t
p
P
t
(1) Unidirectional (half cycle)
(2) Bidirectional (full cycle)
Fig. 6. Transient thermal impedance from junction to mounting base as a function of pulse duration
NXP Semiconductors
BTA225B-800B
3Q Hi-Com Triac
BTA225B-800B All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet 6 August 2014 7 / 14
9. Characteristics
Table 6. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
V
D
= 12 V; I
T
= 0.1 A; T2+ G+;
T
j
= 25 °C; Fig. 7
2 18 50 mA
V
D
= 12 V; I
T
= 0.1 A; T2+ G-;
T
j
= 25 °C; Fig. 7
2 21 50 mA
I
GT
gate trigger current
V
D
= 12 V; I
T
= 0.1 A; T2- G-;
T
j
= 25 °C; Fig. 7
2 34 50 mA
V
D
= 12 V; I
G
= 0.1 A; T2+ G+;
T
j
= 25 °C; Fig. 8
- 31 60 mA
V
D
= 12 V; I
G
= 0.1 A; T2+ G-;
T
j
= 25 °C; Fig. 8
- 34 90 mA
I
L
latching current
V
D
= 12 V; I
G
= 0.1 A; T2- G-;
T
j
= 25 °C; Fig. 8
- 30 60 mA
I
H
holding current V
D
= 12 V; T
j
= 25 °C; Fig. 9 - 31 60 mA
V
T
on-state voltage I
T
= 30 A; T
j
= 25 °C; Fig. 10 - 1.3 1.55 V
V
D
= 12 V; I
T
= 0.1 A; T
j
= 25 °C;
Fig. 11
- 0.7 1 VV
GT
gate trigger voltage
V
D
= 400 V; I
T
= 0.1 A; T
j
= 125 °C;
Fig. 11
0.25 0.4 - V
I
D
off-state current V
D
= 800 V; T
j
= 125 °C - 0.1 0.5 mA
Dynamic characteristics
dV
D
/dt rate of rise of off-state
voltage
V
DM
= 536 V; T
j
= 125 °C; (V
DM
= 67%
of V
DRM
); exponential waveform; gate
open circuit
1000 4000 - V/µs
dI
com
/dt rate of change of
commutating current
V
D
= 400 V; T
j
= 125 °C; I
T(RMS)
= 25 A;
dV
com
/dt = 20 V/µs; (without snubber
condition); gate open circuit; Fig. 12
- 44 - A/ms
NXP Semiconductors
BTA225B-800B
3Q Hi-Com Triac
BTA225B-800B All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet 6 August 2014 8 / 14
T
j
(°C)
-50 0 15010050
003aae177
1
2
3
0
(1)
(2)
(3)
I
GT
I
GT(25°C)
(1) T2- G-
(2) T2+ G-
(3) T2+ G+
Fig. 7. Normalized gate trigger current as a function of
junction temperature
T
j
(°C)
-50 0 15010050
003aae178
1
2
3
0
I
L
I
L(25°C)
Fig. 8. Normalized holding current as a function of
junction temperature
T
j
(°C)
-50 0 15010050
003aae179
1
2
3
0
I
H
I
H(25°C)
Fig. 9. Normalized latching current as a function of
junction temperature
003aae169
0
20
40
60
80
0
1
2
3
V
T
(
V
)
I
T
(A)
(1) (2) (3)
V
o
= 1.073 V; R
s
= 0.015 Ω
(1) T
j
= 125 °C; typical values
(2) T
j
= 125 °C; maximum values
(3) T
j
= 25 °C; maximum values
Fig. 10. On-state current as a function of on-state
voltage
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BTA225B-800B,118

Mfr. #:
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Manufacturer:
WeEn Semiconductors
Description:
Triacs 800V 25A
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