SIHB12N60E-GE3 Datasheet SIHB12N60E-GE3 | P1-P3

SiHB12N60E

www.vishay.com

Vishay Siliconix

S15-0291-Rev. C, 23-Feb-15

1

Document Number: 91486

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

E Series Power MOSFET

FEATURES

• Low figure-of-merit (FOM) R

on

x Q

g

• Low input capacitance (C

iss

)

• Reduced switching and conduction losses

• Ultra low gate charge (Q

g

)

• Avalanche energy rated (UIS)

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

APPLICATIONS

• Server and telecom power supplies

• Switch mode power supplies (SMPS)

• Power factor correction power supplies (PFC)

• Lighting

- High-intensity discharge (HID)

- Fluorescent ballast lighting

• Industrial

- Welding

- Induction heating

- Motor drives

- Battery chargers

- Renewable energy

- Solar (PV inverters)

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature.

b. V

DD

= 50 V, starting T

J

= 25 °C, L = 11.6 mH, R

g

= 25 Ω, I

AS

= 4.5 A.

c. 1.6 mm from case.

d. I

SD

≤ I

D

, dI/dt = 100 A/μs, starting T

J

= 25 °C.

PRODUCT SUMMARY

V

DS

(V) at T

J

max. 650

R

DS(on)

max. at 25 °C (Ω)V

GS

= 10 V 0.38

Q

g

max. (nC) 58

Q

gs

(nC) 6

Q

gd

(nC) 13

Configuration Single

N-Channel MOSFET

G

D

S

D

2

PAK (TO-263)

G

D

S

ORDERING INFORMATION

Package D

2

PAK (TO-263)

Lead (Pb)-free and Halogen-free SiHB12N60E-GE3

ABSOLUTE MAXIMUM RATINGS (T

C

= 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT

Drain-Source Voltage V

DS

600

V

Gate-Source Voltage V

GS

± 30

Continuous Drain Current (T

J

= 150 °C) V

GS

at 10 V

T

C

= 25 °C

I

D

12

AT

C

= 100 °C 7.8

Pulsed Drain Current

a

I

DM

27

Linear Derating Factor 1.2 W/°C

Single Pulse Avalanche Energy

b

E

AS

117 mJ

Maximum Power Dissipation P

D

147 W

Operating Junction and Storage Temperature Range T

J

, T

stg

-55 to +150 °C

Drain-Source Voltage Slope T

J

= 125 °C

dV/dt

70

V/ns

Reverse Diode dV/dt

d

5

Soldering Recommendations (Peak Temperature)

c

for 10 s 300 °C

SiHB12N60E

www.vishay.com

Vishay Siliconix

S15-0291-Rev. C, 23-Feb-15

2

Document Number: 91486

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Notes

a. C

oss(er)

is a fixed capacitance that gives the same energy as C

oss

while V

DS

is rising from 0 % to 80 % V

DSS

.

b. C

oss(tr)

is a fixed capacitance that gives the same charging time as C

oss

while V

DS

is rising from 0 % to 80 % V

DSS

.

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL TYP. MAX. UNIT

Maximum Junction-to-Ambient R

thJA

-62

°C/W

Maximum Junction-to-Case (Drain)

R

thJC

-0.85

SPECIFICATIONS (T

J

= 25 °C, unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Static

Drain-Source Breakdown Voltage V

DS

V

GS

= 0 V, I

D

= 250 μA 600 - - V

V

DS

Temperature Coefficient

ΔV

DS

/T

J

Reference to 25 °C, I

D

= 1 mA

-0.71-

V/°C

Gate-Source Threshold Voltage (N) V

GS(th)

V

DS

= V

GS

, I

D

= 250 μA 2 - 4 V

Gate-Source Leakage I

GSS

V

GS

= ± 20 V - - ± 100 nA

V

GS

= ± 30 V - - ± 1 μA

Zero Gate Voltage Drain Current I

DSS

V

DS

= 600 V, V

GS

= 0 V - - 1

μA

V

DS

= 480 V, V

GS

= 0 V, T

J

= 125 °C - - 10

Drain-Source On-State Resistance R

DS(on)

V

GS

= 10 V I

D

= 6 A - 0.32 0.38 Ω

Forward Transconductance g

fs

V

DS

= 40 V, I

D

= 8 A - 3.8 - S

Dynamic

Input Capacitance C

iss

V

GS

= 0 V,

V

DS

= 100 V,

f = 1 MHz

- 937 -

pF

Output Capacitance C

oss

-53-

Reverse Transfer Capacitance C

rss

-5-

Effective Output Capacitance, Energy

C

o(er)

V

DS

= 0 V to 480 V, V

GS

= 0 V

-41-

Effective Output Capacitance, Time

C

o(tr)

- 136 -

Total Gate Charge Q

g

V

GS

= 10 V I

D

= 6 A, V

DS

= 480 V

-2958

nC Gate-Source Charge Q

gs

-6-

Gate-Drain Charge Q

gd

-13-

Turn-On Delay Time t

d(on)

V

DD

= 480 V, I

D

= 6 A,

V

GS

= 10 V, R

g

= 9.1 Ω

-1428

ns

Rise Time t

r

-1938

Turn-Off Delay Time t

d(off)

-3570

Fall Time t

f

-1938

Gate Input Resistance R

g

f = 1 MHz, open drain - 1.1 - Ω

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current I

S

MOSFET symbol

showing the

integral reverse

p - n junction diode

--12

A

Pulsed Diode Forward Current I

SM

--48

Diode Forward Voltage V

SD

T

J

= 25 °C, I

S

= 6 A, V

GS

= 0 V - - 1.2 V

Reverse Recovery Time t

rr

T

J

= 25 °C, I

F

= I

S

= 6 A,

dI/dt = 100 A/μs, V

R

= 25 V

- 350 - ns

Reverse Recovery Charge Q

rr

-4-μC

Reverse Recovery Current I

RRM

-19-A

S

D

G

SiHB12N60E

www.vishay.com

Vishay Siliconix

S15-0291-Rev. C, 23-Feb-15

3

Document Number: 91486

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Fig. 1 - Typical Output Characteristics

Fig. 2 - Typical Output Characteristics

Fig. 3 - Typical Transfer Characteristics

Fig. 4 - Normalized On-Resistance vs. Temperature

Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage

Fig. 6 - C

oss

and E

oss

vs. V

DS

V

DS

, Drain-to-Source Voltage (V)

I

D

, Drain-to-Source Current (A)

0 5 10 15 20 25 30

0

5

10

15

20

25

30

TOP 15 V

14 V

13 V

12 V

11 V

10 V

9 V

T

J

= 25 °C

6 V

8 V

5 V

7 V

V

DS

, Drain-to-Source Voltage (V)

I

D

, Drain-to-Source Current (A)

010205152530

5 V

6 V

7 V

TOP 15 V

14 V

13 V

12 V

11 V

10 V

9 V

8 V

T

J

= 150 °C

0

4

8

12

16

20

V

GS

, Gate-to-Source Voltage (V)

I

D

, Drain-to-Source Current (A)

010 2551520

5

10

15

20

25

30

0

T

J

= 25 °C

T

J

= 150 °C

T

J

, Junction Temperature (°C)

R

DS(on)

, Drain-to-Source

2.5

0.5

- 60

3

2

1.5

1

0

- 40 - 20

0

20 40 60 80 100 120

140

160

On Resistance (Normalized)

V

GS

= 10 V

I

D

= 6 A

V

DS

, Drain-to-Source Voltage (V)

Capacitance (pF)

100

10

0 200

400

10 000

1

1000

100 300

500 600

C

iss

C

oss

C

rss

V

GS

= 0 V, f = 1 MHz

C

iss

= C

gs

+ C

gd

, C

ds

Shorted

C

rss

= C

gd

C

oss

= C

ds

+ C

gd

0

1

2

3

4

5

6

7

8

20

200

2000

0 100 200 300 400 500 600

E

oss

(μJ)

C

oss

(pF)

V

DS

C

oss

E

oss

SIHB12N60E-GE3

SIHB12N60E-GE3

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