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SIHB12N60E-GE3

P1-P3P4-P6P7-P9
SiHB12N60E
www.vishay.com
Vishay Siliconix
S15-0291-Rev. C, 23-Feb-15
4
Document Number: 91486
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 7 - Typical Gate Charge vs. Gate-to-Source Voltage
Fig. 8 - Typical Source-Drain Diode Forward Voltage
Fig. 9 - Maximum Safe Operating Area
Fig. 10 - Maximum Drain Current vs. Case Temperature
Fig. 11 - Temperature vs. Drain-to-Source Voltage
Q
g
, Total Gate Charge (nC)
V
GS
, Gate-to-Source Voltage (V)
16
4
0
24
20
12
8
0 10 20 30 40 50 60
V
DS
= 480 V
V
DS
= 300 V
V
DS
= 120 V
V
DS
, Drain-to-Source Voltage (V)
I
D
, Drain Current (A)
1101001000
* V
GS
> minimum V
GS
at which R
DS(on)
is specied
0.01
0.1
1
10
100
1000
1 ms
10 ms
100 μs
Limited by R
DS(on)
*
I
DM
= Limited
Operation in this Area
Limited by R
DS(on)
BVDSS Limited
T
C
= 25 °C
T
J
= 150 °C
Single Pulse
T
J
, Case Temperature (°C)
I
D
, Drain Current (A)
25 50 75 100 125 150
3
6
9
12
15
0
T
J
, Junction Temperature (°C)
V
DS
, Drain-to-Source
- 60 0 160
Breakdown Voltage (V)
- 40 - 20 20 40 60 80 100 120 140
525
550
575
600
625
650
675
700
725
750
SiHB12N60E
www.vishay.com
Vishay Siliconix
S15-0291-Rev. C, 23-Feb-15
5
Document Number: 91486
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 12 - Normalized Thermal Transient Impedance, Junction-to-Case
Fig. 13 - Switching Time Test Circuit
Fig. 14 - Switching Time Waveforms
Fig. 15 - Unclamped Inductive Test Circuit
Fig. 16 - Unclamped Inductive Waveforms
Fig. 17 - Basic Gate Charge Waveform
Fig. 18 - Gate Charge Test Circuit
0.01
0.1
1
0.0001 0.001 0.01 0.1 1
Normalized Effective Transient
Thermal Impedance
Pulse Time (s)
Duty Cycle = 0.5
0.2
0.1
Single Pulse
0.02
0.05
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
R
D
V
GS
R
G
D.U.T.
10 V
+
-
V
DS
V
DD
V
DS
90 %
10 %
V
GS
t
d(on)
t
r
t
d(off)
t
f
R
G
I
AS
0.01 Ω
t
p
D.U.T
L
V
DS
+
-
V
DD
10 V
Vary t
p
to obtain
required I
AS
I
AS
V
DS
V
DD
V
DS
t
p
Q
GS
Q
GD
Q
G
V
G
Charge
10 V
D.U.T.
3 mA
V
GS
V
DS
I
G
I
D
0.3 µF
0.2 µF
50 kΩ
12 V
Current regulator
Current sampling resistors
Same type as D.U.T.
+
-
SiHB12N60E
www.vishay.com
Vishay Siliconix
S15-0291-Rev. C, 23-Feb-15
6
Document Number: 91486
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 19 - For N-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91486
.
P.W.
Period
dI/dt
Diode recovery
dV/dt
Ripple ≤ 5 %
Body diode forward drop
Re-applied
voltage
Reverse
recovery
current
Body diode forward
current
V
GS
= 10 V
a
I
SD
Driver gate drive
D.U.T. l
SD
waveform
D.U.T. V
DS
waveform
Inductor current
D =
P.W.
Period
+
-
+
+
+
-
-
-
Peak Diode Recovery dV/dt Test Circuit
V
DD
• dV/dt controlled by R
g
• Driver same type as D.U.T.
•
I
SD
controlled by duty factor “D”
• D.U.T. - device under test
D.U.T.
Circuit layout considerations
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
R
g
Note
a. V
GS
= 5 V for logic level devices
V
DD
P1-P3P4-P6P7-P9

SIHB12N60E-GE3

Mfr. #:
Buy SIHB12N60E-GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET 600V Vds 30V Vgs D2PAK (TO-263)
Lifecycle:
New from this manufacturer.
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