1. Product profile
1.1 General description
NPN silicon germanium microwave transistor for high speed, low noise applications in a
plastic, 4-pin dual-emitter SOT343F package.
1.2 Features and benefits
Low noise high gain microwave transistor
Noise figure (NF) = 0.7 dB at 5.8 GHz
High maximum stable gain 27 dB at 1.8 GHz
110 GHz f
T
silicon germanium technology
1.3 Applications
2nd LNA stage and mixer stage in DBS LNB’s
Satellite radio
Low noise amplifiers for microwave communications systems
WLAN and CDMA applications
Analog/digital cordless applications
Ka band oscillators (DRO’s)
1.4 Quick reference data
BFU725F/N1
NPN wideband silicon germanium RF transistor
Rev. 2 — 3 November 2011 Product data sheet
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling
electrostatic sensitive devices.
Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or
equivalent standards.
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
CBO
collector-base voltage open emitter - - 10 V
V
CEO
collector-emitter voltage open base - - 2.8 V
V
EBO
emitter-base voltage open collector - - 1.0 V
I
C
collector current - 25 40 mA
P
tot
total power dissipation T
sp
90 C
[1]
- - 136 mW
h
FE
DC current gain I
C
=10mA; V
CE
=2V;
T
j
=25C
160 280 400
