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BFU725F/N1,115

P1-P3P4-P6P7-P9P10-P12
BFU725F_N1 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 2 — 3 November 2011 7 of 12
NXP Semiconductors
BFU725F/N1
NPN wideband silicon germanium RF transistor
V
CE
=2V; I
C
=5mA; T
amb
=25C. V
CE
=2V; I
C
=25mA; T
amb
=25C.
Fig 7. Gain as a function of frequency; typical values Fig 8. Gain as a function of frequency; typical values
V
CE
=2V; T
amb
=25C.
(1) f = 12 GHz
(2) f = 5.8 GHz
(3) f = 2.4 GHz
(4) f = 1.8 GHz
(5) f = 1.5 GHz
V
CE
=2V; T
amb
=25C.
(1) I
C
=25mA
(2) I
C
=5mA
Fig 9. Minimum noise figure as a function of
collector current; typical values
Fig 10. Minimum noise figure as a function of
frequency; typical values
001aah430
20
30
10
40
50
G
(dB)
0
f (GHz)
10
−2
10
2
1010
−1
1
MSG
IS21I
2
MSG
G
p(max)
001aah431
20
30
10
40
50
G
(dB)
0
f (GHz)
10
−2
10
2
1010
−1
1
MSG
MSG
IS21I
2
G
p(max)
001aah432
I
C
(mA)
0302010
0.8
1.2
0.4
1.6
2.0
NF
min
(dB)
0
(3)
(4)
(5)
(1)
(2)
f (GHz)
0161248
001aah433
0.8
1.2
0.4
1.6
2.0
NF
min
(dB)
0
(1)
(2)
BFU725F_N1 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 2 — 3 November 2011 8 of 12
NXP Semiconductors
BFU725F/N1
NPN wideband silicon germanium RF transistor
8. Package outline
Fig 11. Package outline SOT343F
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC JEDEC JEITA
SOT343F
SOT343F
05-07-12
06-03-16
UNIT
A
max
mm
0.4
0.3
0.75
0.65
0.7
0.5
2.2
1.8
0.25
0.10
1.35
1.15
0.48
0.38
2.2
2.0
b
p
DIMENSIONS (mm are the original dimensions)
Plastic surface-mounted flat pack package; reverse pinning; 4 leads
b
1
c D E e e
1
H
E
1.151.3
L
p
w y
0.10.2
0 1 2 mm
scale
detail X
L
p
c
A
E
X
H
E
D
A
y
b
p
b
1
e
1
e
wA
M
wA
M
12
34
BFU725F_N1 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 2 — 3 November 2011 9 of 12
NXP Semiconductors
BFU725F/N1
NPN wideband silicon germanium RF transistor
9. Abbreviations
10. Revision history
Table 8. Abbreviations
Acronym Description
CDMA Code Division Multiple Access
DBS Direct Broadcast Satellite
DC Direct Current
DRO Dielectric Resonator Oscillator
LNA Low Noise Amplifier
LNB Low Noise Block
Ka Kurtz above
NPN Negative-Positive-Negative
RF Radio Frequency
WLAN Wireless Local Area Network
Table 9. Revision history
Document ID Release date Data sheet status Change notice Supersedes
BFU725F_N1 v.2 20111103 Product data sheet - BFU725F_N1 v.1
Modifications:
• Table 1 on page 1: The maximum value for V
EBO
has been changed to 1.0 V.
• Table 5 on page 3: The maximum value for V
EBO
has been changed to 1.0 V.
BFU725F_N1 v.1 20090713 Product data sheet - -
P1-P3P4-P6P7-P9P10-P12

BFU725F/N1,115

Mfr. #:
Buy BFU725F/N1,115
Manufacturer:
NXP Semiconductors
Description:
RF Bipolar Transistors 2.8V 0.04A 4-Pin Trans GP BJT NPN
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New from this manufacturer.
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