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BFU725F/N1,115

P1-P3P4-P6P7-P9P10-P12
BFU725F_N1 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 2 — 3 November 2011 4 of 12
NXP Semiconductors
BFU725F/N1
NPN wideband silicon germanium RF transistor
7. Characteristics
Table 7. Characteristics
T
j
=25
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
V
(BR)CBO
collector-base breakdown
voltage
I
C
=2.5A; I
E
=0mA 10--V
V
(BR)CEO
collector-emitter breakdown
voltage
I
C
=1mA; I
B
=0mA 2.8--V
I
C
collector current - 2540mA
I
CBO
collector-base cut-off current I
E
=0mA; V
CB
=4.5V - - 100 nA
h
FE
DC current gain I
C
=10mA; V
CE
= 2 V 160 280 400
C
CES
collector-emitter capacitance V
CB
= 2 V; f = 1 MHz - 268 - fF
C
EBS
emitter-base capacitance V
EB
= 0.5 V; f = 1 MHz - 400 - fF
C
CBS
collector-base capacitance V
CB
= 2 V; f = 1 MHz - 70 - fF
f
T
transition frequency I
C
=25mA; V
CE
=2V; f=2GHz; T
amb
=25C-55-GHz
G
p(max)
maximum power gain I
C
=25mA; V
CE
=2V; T
amb
=25C
[1]
f = 1.5 GHz - 28 - dB
f = 1.8 GHz - 27 - dB
f = 2.4 GHz - 25.5 - dB
f = 5.8 GHz - 18 - dB
f = 12 GHz - 13 - dB
s
21
2
insertion power gain I
C
=25mA; V
CE
=2V; T
amb
=25C
f = 1.5 GHz - 26.7 - dB
f = 1.8 GHz - 25.4 - dB
f = 2.4 GHz - 23 - dB
f = 5.8 GHz - 16 - dB
f = 12 GHz - 9.3 - dB
NF noise figure I
C
=5mA; V
CE
=2V;
S
=
opt
; T
amb
=25C
f = 1.5 GHz - 0.42 - dB
f = 1.8 GHz - 0.43 - dB
f = 2.4 GHz - 0.47 - dB
f=5.8GHz - 0.7 - dB
f = 12 GHz - 1.1 - dB
G
ass
associated gain I
C
=5mA; V
CE
=2V;
S
=
opt
; T
amb
=25C
f = 1.5 GHz - 24 - dB
f = 1.8 GHz - 22 - dB
f = 2.4 GHz - 20 - dB
f = 5.8 GHz - 13.5 - dB
f = 12 GHz - 10 - dB
BFU725F_N1 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 2 — 3 November 2011 5 of 12
NXP Semiconductors
BFU725F/N1
NPN wideband silicon germanium RF transistor
[1] G
p(max)
is the maximum power gain, if K 1. If K 1 then G
p(max)
=MSG.
P
L(1dB)
output power at 1 dB gain
compression
I
C
=25mA; V
CE
=2V; Z
S
=Z
L
=50; T
amb
=25C
f=1.5GHz - 8.5 - dBm
f=1.8GHz - 9 - dBm
f=2.4GHz - 8.5 - dBm
f=5.8GHz - 8 - dBm
IP3 third-order intercept point I
C
=25mA; V
CE
=2V; Z
S
=Z
L
=50; T
amb
=25C;
f
2
=f
1
+ 1 MHz
f
1
= 1.5 GHz - 17 - dBm
f
1
= 1.8 GHz - 17 - dBm
f
1
= 2.4 GHz - 17 - dBm
f
1
= 5.8 GHz - 19 - dBm
Table 7. Characteristics …continued
T
j
=25
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
T
amb
=25C.
(1) I
B
=110A
(2) I
B
= 100 A
(3) I
B
=90A
(4) I
B
=80A
(5) I
B
=70A
(6) I
B
=60A
(7) I
B
=50A
(8) I
B
=40A
(9) I
B
=30A
(10) I
B
=20A
(11) I
B
=10A
T
amb
=25C.
(1) V
CE
=1V
(2) V
CE
= 1.5 V
(3) V
CE
=2V
Fig 2. Collector current as a function of
collector-emitter voltage; typical values
Fig 3. DC current gain a function of collector current;
typical values
V
CE
(V)
0 2.50.5 2.0 3.01.51.0 3.5
001aak271
10
20
30
I
C
(mA)
0
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
(9)
(10)
(11)
001aak272
I
C
(mA)
0302010
300
250
350
400
h
FE
200
(1)
(2)
(3)
BFU725F_N1 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 2 — 3 November 2011 6 of 12
NXP Semiconductors
BFU725F/N1
NPN wideband silicon germanium RF transistor
f=1MHz, T
amb
=25C. V
CE
= 2 V; f = 2 GHz; T
amb
=25C.
Fig 4. Collector-base capacitance as a function of
collector-base voltage; typical values
Fig 5. Transition frequency as a function of collector
current; typical values
V
CE
=2V; T
amb
=25C.
(1) f = 1.5 GHz
(2) f = 1.8 GHz
(3) f = 2.4 GHz
(4) f = 5.8 GHz
(5) f = 12 GHz
Fig 6. Gain as a function of collector current; typical value
001aah427
V
CB
(V)
01284
80
40
120
160
C
CBS
(fF)
0
I
C
(mA)
0403010 20
001aak273
20
40
60
f
T
(GHz)
0
001aah429
I
C
(mA)
10
−1
10
2
101
10
10
2
G
(dB)
1
(1)
(2)
(3)
(4)
(5)
MSG
MSG
G
max
G
max
P1-P3P4-P6P7-P9P10-P12

BFU725F/N1,115

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Buy BFU725F/N1,115
Manufacturer:
NXP Semiconductors
Description:
RF Bipolar Transistors 2.8V 0.04A 4-Pin Trans GP BJT NPN
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