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SI4276DY-T1-GE3

P1-P3P4-P6P7-P9P10-P12
Vishay Siliconix
Si4276DY
Document Number: 66599
S10-1289-Rev. A, 31-May-10
www.vishay.com
1
Dual N-Channel 30 V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V) R
DS(on)
(Ω)I
D
(A)
a
Q
g
(Typ.)
Channel 1 30
0.0153 at V
GS
= 10 V 8
e
8.4
0.0184 at V
GS
= 4.5 V 8
e
Channel 2 30
0.0280 at V
GS
= 10 V 8
3.6
0.0340 at V
GS
= 4.5 V 7.1
Notes:
a. Based on T
C
= 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under steady state conditions is 107 °C/W (Ch 1) and 110 °C/W (Ch 2).
e. Package limited.
ABSOLUTE MAXIMUM RATINGS T
A
= 25 °C, unless otherwise noted
Parameter Symbol Channel 1 Channel 2 Unit
Drain-Source Voltage V
DS
30
V
Gate-Source Voltage V
GS
± 20
Continuous Drain Current (T
J
= 150 °C)
T
C
= 25 °C
I
D
8
e
8
A
T
C
= 70 °C 8
e
6.4
T
A
= 25 °C 8
b, c, e
6.8
b, c
T
A
= 70 °C 7.6
b, c
5.5
b, c
Pulsed Drain Current (10 µs Pulse Width)
I
DM
50 30
Source-Drain Current Diode Current
T
C
= 25 °C
I
S
3.0 2.3
T
A
= 25 °C 1.7
b, c
1.7
b, c
Single Pulse Avalanche Current
L = 0.1 mH
I
AS
20 10
Avalanche Energy E
AS
20 5 mJ
Maximum Power Dissipation
T
C
= 25 °C
P
D
3.6 2.8
W
T
C
= 70 °C 2.3 1.8
T
A
= 25 °C 2.1
b, c
2.0
b, c
T
A
= 70 °C 1.3
b, c
1.3
b, c
Operating Junction and Storage Temperature Range T
J
, T
stg
- 55 to 150 °C
THERMAL RESISTANCE RATINGS
Parameter Symbol
Channel 1 Channel 2
Unit
Typical Maximum Typical Maximum
Maximum Junction-to-Ambient
b, d
t ≤ 10 s R
thJA
47 60 58 62.5
°C/W
Maximum Junction-to-Foot (Drain)
Steady
R
thJF
30 35 38 45
S
1
D
1
G
1
D
1
S
2
D
2
G
2
D
2
SO-8
5
6
7
8
Top View
2
3
4
1
Ordering Information: Si4276DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
N-Channel MOSFET
D
1
G
1
S
1
D
2
G
2
S
2
N-Channel MOSFET
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
•TrenchFET
®
Power MOSFET
• 100 % R
g
Test e d
• 100 % UIS Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• DC/DC for Notebook PC
www.vishay.com
2
Document Number: 66599
S10-1289-Rev. A, 31-May-10
Vishay Siliconix
Si4276DY
SPECIFICATIONS T
J
= 25 °C, unless otherwise noted
Parameter Symbol Test Conditions Min. Typ.
a
Max. Unit
Static
Drain-Source Breakdown Voltage V
DS
V
GS
= 0 V, I
D
= 250 µA Ch 1 30
V
V
GS
= 0 V, I
D
= 250 µA Ch 2 30
V
DS
Temperature Coefficient ΔV
DS
/T
J
I
D
= 250 µA Ch 1 29
mV/°C
I
D
= 250 µA Ch 2 30
V
GS(th)
Temperature Coefficient ΔV
GS(th)
/T
J
I
D
= 250 µA Ch 1 - 5.2
I
D
= 250 µA Ch 2 - 4.4
Gate Threshold Voltage V
GS(th)
V
DS
= V
GS
, I
D
= 250 µA Ch 1 1.2 2.5
V
V
DS
= V
GS
, I
D
= 250 µA Ch 2 1.2 2.5
Gate-Body Leakage I
GSS
V
DS
= 0 V, V
GS
= ± 20 V
Ch 1 100
nA
Ch 2 100
Zero Gate Voltage Drain Current I
DSS
V
DS
= 30 V, V
GS
= 0 V Ch 1 1
µA
V
DS
= 30 V, V
GS
= 0 V Ch 2 1
V
DS
= 30 V, V
GS
= 0 V, T
J
= 55 °C Ch 1 10
V
DS
= 30 V, V
GS
= 0 V, T
J
= 55 °C Ch 2 10
On-State Drain Current
b
I
D(on)
V
DS
= 5 V, V
GS
= 10 V Ch 1 10
A
V
DS
= 5 V, V
GS
= 10 V Ch 2 10
Drain-Source On-State
Resistance
b
R
DS(on)
V
GS
= 10 V, I
D
= 9.5 A Ch 1 0.0127 0.0153
Ω
V
GS
= 10 V, I
D
= 6.8 A Ch 2 0.0230 0.0280
V
GS
= 4.5 V, I
D
= 8.7 A Ch 1 0.0146 0.0184
V
GS
= 4.5 V, I
D
= 6.1 A Ch 2 0.0280 0.0340
Forward Transconductance
b
g
fs
V
DS
= 15 V, I
D
= 9.5 A Ch 1 43
S
V
DS
= 15 V, I
D
= 6.8 A Ch 2 17
Dynamic
a
Input Capacitance C
iss
Channel 1
V
DS
= 15 V, V
GS
= 0 V, f = 1 MHz
Channel 2
V
DS
= 15 V, V
GS
= 0 V, f = 1 MHz
Ch 1 1000
pF
Ch 2 366
Output Capacitance C
oss
Ch 1 215
Ch 2 82
Reverse Transfer Capacitance C
rss
Ch 1 85
Ch 2 45
Total Gate Charge Q
g
V
DS
= 15 V, V
GS
= 10 V, I
D
= 9.5 A Ch 1 17.2 26
nC
V
DS
= 15 V, V
GS
= 10 V, I
D
= 6.8 A Ch 2 7.3 15
Channel 1
V
DS
= 15 V, V
GS
= 4.5 V, I
D
= 9.5 A
Channel 2
V
DS
= 15 V, V
GS
= 4.5 V, I
D
= 6.8 A
Ch 1 8.4 17
Ch 2 3.6 8
Gate-Source Charge Q
gs
Ch 1 3
Ch 2 1.1
Gate-Drain Charge Q
gd
Ch 1 2.6
Ch 2 1.3
Gate Resistance R
g
f = 1 MHz
Ch 1 0.6 3.1 6.2
Ω
Ch 2 0.5 2.6 5.2
Document Number: 66599
S10-1289-Rev. A, 31-May-10
www.vishay.com
3
Vishay Siliconix
Si4276DY
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Parameter Symbol Test Conditions Min. Typ.
a
Max. Unit
Dynamic
a
Tu r n - O n Delay Ti m e t
d(on)
Channel 1
V
DD
= 15 V, R
L
= 2 Ω
I
D
≅ 7.6 A, V
GEN
= 10 V, R
g
= 1 Ω
Channel 2
V
DD
= 15 V, R
L
= 2.7 Ω
I
D
≅ 5.5 A, V
GEN
= 10 V, R
g
= 1 Ω
Ch 1 8 16
ns
Ch 2 4 8
Rise Time t
r
Ch 1 10 20
Ch 2 8 16
Turn-Off DelayTime t
d(off)
Ch 1 20 30
Ch 2 11 20
Fall Time t
f
Ch 1 7 14
Ch 2 7 14
Tu r n - O n Delay Ti m e t
d(on)
Channel 1
V
DD
= 15 V, R
L
= 2 Ω
I
D
≅ 7.6 A, V
GEN
= 4.5 V, R
g
= 1 Ω
Channel 2
V
DD
= 15 V, R
L
= 2.7 Ω
I
D
≅ 5.5 A, V
GEN
= 4.5 V, R
g
= 1 Ω
Ch 1 14 21
Ch 2 8 16
Rise Time t
r
Ch 1 11 20
Ch 2 10 20
Turn-Off Delay Time t
d(off)
Ch 1 18 27
Ch 2 10 20
Fall Time t
f
Ch 1 7 14
Ch 2 7 14
Drain-Source Body Diode Characteristics
Continous Source-Drain Diode
Current
I
S
T
C
= 25 °C
Ch 1 3
A
Ch 2 2.3
Pulse Diode Forward Current
a
I
SM
Ch 1 50
Ch 2 30
Body Diode Voltage V
SD
I
S
= 7.6 A Ch 1 0.82 1.2
V
I
S
= 5.5 A Ch 2 0.85 1.2
Body Diode Reverse Recovery
Time
t
rr
Channel 1
I
F
= 7.7 A, dI/dt = 100 A/µs, T
J
= 25 °C
Channel 2
I
F
= 5.5 A, dI/dt = 100 A/µs, T
J
= 25 °C
Ch 1 20 30
ns
Ch 2 13 20
Body Diode Reverse Recovery
Charge
Q
rr
Ch 1 12 20
nC
Ch 2 6 12
Reverse Recovery Fall Time t
a
Ch 1 11
ns
Ch 2 7
Reverse Recovery Rise Time t
b
Ch 1 9
Ch 2 6
SPECIFICATIONS T
J
= 25 °C, unless otherwise noted
P1-P3P4-P6P7-P9P10-P12

SI4276DY-T1-GE3

Mfr. #:
Buy SI4276DY-T1-GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET RECOMMENDED ALT 781-SI4202DY-T1-GE3
Lifecycle:
New from this manufacturer.
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