General Description
The DS5003 secure microprocessor incorporates
sophisticated security features including an array of
mechanisms that are designed to resist all levels of
threat, including observation, analysis, and physical
attack. As a result, a massive effort is required to obtain
any information about its memory contents.
Furthermore, the “soft” nature of the DS5003 allows fre-
quent modification of the secure information, thereby
minimizing the value of any secure information obtained
by such a massive effort. The device is an enhanced
version of the DS5002FP secure microprocessor chip
with additional scratchpad RAM.
Differences from the DS5002FP
The DS5003 implements only one additional feature
from the DS5002FP: it adds 128 bytes of internal
scratchpad memory (for a total of 256 bytes) similar to
that used in 8032/8052 architectures. This additional
memory is accessible through indirect addressing 8051
instructions such as “mov a, @r1,” where r1 now can
have a value between 0 and 255. It is also usable as
stack space for pushes, pops, calls, and returns.
Register indirect addressing is used to access the
scratchpad RAM locations above 7Fh. It can also be
used to reach the lower RAM (0h–7Fh) if needed. The
address is supplied by the contents of the working reg-
ister specified in the instruction. Thus, one instruction
can be used to reach many values by altering the con-
tents of the designated working register. Note that only
R0 and R1 can be used as pointers. An example of reg-
ister indirect addressing is as follows:
ANL A, @R0 ;Logical AND the Accumulator with
the contents of
;the register pointed to by the
value stored in R0
Applications
PIN Pads
Gaming Machines
Any Application Requiring Software Protection
Features
8051-Compatible Microprocessor for
Secure/Sensitive Applications
Access 32kB, 64kB, or 128kB of Nonvolatile
SRAM for Program and/or Data Storage
128 Bytes of RAM
128 Bytes of Indirect Scratchpad RAM
In-System Programming Through On-Chip
Serial Port
Can Modify Its Own Program or Data Memory in
the End System
Firmware Security Features
Memory Stored in Encrypted Form
Encryption Using On-Chip 64-Bit Key
Automatic True Random-Key Generator
Self-Destruct Input (SDI)
Top Coating Prevents Microprobing
Protects Memory Contents from Piracy
Crash-Proof Operation
Maintains All Nonvolatile Resources for Over
10 Years (at Room Temperature) in the
Absence of Power
Power-Fail Reset
Early Warning Power-Fail Interrupt
Watchdog Timer
DS5003
Secure Microprocessor Chip
________________________________________________________________
Maxim Integrated Products
1
Rev 0; 3/08
For pricing, delivery, and ordering information, please contact Maxim Direct at 1-888-629-4642,
or visit Maxim’s website at www.maxim-ic.com.
Pin Configuration appears at end of data sheet.
Ordering Information
+
Denotes a lead(Pb)-free/RoHS-compliant package.
PART
TEMP
RANGE
INTERNAL
MICRO
PROBE
SHIELD
PIN-
PACKAGE
DS5003FPM-16+ 0°C to +70°C Yes 80 MQFP
DS5003
Secure Microprocessor Chip
2 _______________________________________________________________________________________
ABSOLUTE MAXIMUM RATINGS
DC CHARACTERISTICS
(V
CC
= 5V ±10%, T
A
= 0°C to +70°C.)
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
Voltage Range on Any Pin
Relative to Ground..................................-0.3V to (V
CC
+ 0.5V)
Voltage Range on V
CC
Relative
to Ground ..........................................................-0.3V to +6.0V
Operating Temperature Range.............................40°C to +85°C
Storage Temperature* .......................................-55°C to +125°C
Soldering Temperature...........................Refer to the IPC/JEDEC
J-STD-020 Specification.
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
Operating Voltage V
CC
(Note 1) V
CCMIN
5.5 V
Minimum Operating Voltage V
CCMIN
0°C to +7C (Note 1) 4.00 4.12 4.25 V
Power-Fail Warning Voltage V
PFW
0°C to +7C (Note 1) 4.25 4.37 4.50 V
Lithium Supply Voltage V
LI
(Note 1) 2.5 4.0 V
Operating Current at 16MHz I
CC
(Note 2) 36 mA
Idle-Mode Current at 12MHz I
IDLE
0°C to +7C (Note 3) 7.0 mA
Stop-Mode Current I
STOP
(Note 4) 80 μA
Pin Capacitance C
IN
(Note 5) 10 pF
Output Supply Voltage (V
CCO
) V
CCO1
(Notes 1, 2)
V
CC
-
0.45
V
Output Supply Battery-Backed
Mode (V
CCO
, CE1 CE4, PE1,
PE2)
V
CCO2
0°C to +7C (Notes 1, 6)
V
LI
-
0.65
V
Output Supply Current (Note 7) I
CCO1
V
CCO
= V
CC
- 0.45V 75 mA
Lithium-Backed Quiescent
Current (Note 8)
I
LI
0°C to +7C 5 75 nA
BAT = 3.0V (0°C to +70°C) (Note 1) 4.00 4.25
Reset Trip Point in Stop Mode
BAT = 3.3V (0°C to +70°C) (Note 1) 4.40 4.65
V
Input Low Voltage V
IL
(Note 1) -0.3 +0.8 V
Input High Voltage V
IH1
(Note 1) 2.0
V
CC
+
0.3
V
Input High Voltage
(RST, XTAL1, PROG)
V
IH2
(Note 1) 3.5
V
CC
+
0.3
V
Output Low Voltage at
I
OL
= 1.6mA (Ports 1, 2, 3, PF)
V
OL1
(Notes 1, 9) 0.15 0.45 V
*Storage temperature is defined as the temperature of the device when V
CC
= 0V and V
LI
= 0V. In this state, the contents of SRAM
are not battery backed and are undefined.
Note: The DS5003 adheres to all AC and DC electrical specifications published for the DS5002FP.
DS5003
Secure Microprocessor Chip
_______________________________________________________________________________________ 3
AC CHARACTERISTICS—SDI PIN
(V
CC
= 0V to 5V, T
A
= 0°C to +70°C.)
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
4.5V < V
CC
< 5.5V 1.3
SDI Pulse Reject (Note 11) t
SPR
V
CC
= 0V, V
BAT
= 2.9V 4
μs
4.5V < V
CC
< 5.5V 10
SDI Pulse Accept (Note 11) t
SPA
V
CC
= 0V, V
BAT
= 2.9V 50
μs
DC CHARACTERISTICS (continued)
(V
CC
= 5V ±10%, T
A
= 0°C to +70°C.)
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
Output Low Voltage at
I
OL
= 3.2mA (P0.0–P0.7, ALE,
BA0–BA14, BD0–BD7, R/W,
CE1N, CE1CE4, PE1PE4,
VRST)
V
OL2
(Note 1) 0.15 0.45 V
Output High Voltage at
I
OH
= -80μA (Ports 1, 2, 3)
V
OH1
(Note 1) 2.4 4.8 V
Output High Voltage at
I
OH
= -400μA (P0.0–P0.7, ALE,
BA0–BA14, BD0–BD7, R/W,
CE1N, CE1CE4, PE1PE4,
VRST)
V
OH2
(Note 1) 2.4 4.8 V
Input Low Current,
V
IN
= 0.45V (Ports 1, 2, 3)
I
IL
-50 μA
Transition Current 1 to 0,
V
IN
= 2.0V (Ports 1, 2, 3)
I
TL
-500 μA
SDI Input Low Voltage V
ILS
(Note 1) 0.4 V
SDI Input High Voltage V
IHS
(Notes 1, 10) 2.0 V
CCO
V
SDI Pulldown Resistor R
SDI
25 60 k
Input Leakage
(P0.0–P0.7, MSEL)
I
IL
0.45 < V
IN
< V
CC
+10 μA
RST Pulldown Resistor R
RE
0°C to +7C 40 150 k
VRST Pullup Resistor R
VR
4.7 k
PROG Pullup Resistor R
PR
40 k

DS5003FPM-16+

Mfr. #:
Manufacturer:
Maxim Integrated
Description:
Microprocessors - MPU Soft MCU Chip
Lifecycle:
New from this manufacturer.
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